STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data TAB Features TAB * Maximum junction temperature: TJ = 175 C * Very high speed switching series 3 3 2 * Tail-less switching off 1 1 TO-220 * Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A DPAK TAB * Tight parameters distribution * Safe paralleling * Low thermal resistance 3 3 2 2 1 TO-247 1 * Very fast soft recovery antiparallel diode * Lead free package TO-3P Figure 1. Internal schematic diagram Applications * Photovoltaic inverters * Uninterruptible power supply * Welding * Power factor correction * Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the "V" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGB20V60DF GB20V60DF DPAK Tape and reel STGP20V60DF GP20V60DF TO-220 Tube STGW20V60DF GW20V60DF TO-247 Tube STGWT20V60DF GWT20V60DF TO-3P Tube June 2013 This is information on a product in full production. DocID024360 Rev 3 1/23 www.st.com 23 Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DocID024360 Rev 3 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 C 40 A IC Continuous collector current at TC = 100 C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage 20 V IF Continuous forward current at TC = 25 C 40 A IF Continuous forward current at TC = 100 C 20 A IFP(1) Pulsed forward current 80 A PTOT Total dissipation at TC = 25 C 167 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C VCES TJ Parameter 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.9 C/W RthJC Thermal resistance junction-case diode 2.08 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID024360 Rev 3 3/23 Electrical characteristics 2 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Unit V 1.8 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 20 A TJ = 175 C Forward on-voltage Max. 600 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2.2 2.15 V 2.3 IF = 20 A 1.7 IF = 20 A TJ = 125 C 1.55 V IF = 20 A TJ = 175 C 1.3 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 2.2 V 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/23 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 20 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024360 Rev 3 Min. Typ. Max. Unit - 2800 - pF - 110 - pF - 64 - pF - 116 - nC - 24 - nC - 50 - nC STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 38 - ns Current rise time - 10 - ns - 1556 - A/s - 149 - ns - 15 - ns Turn-on current slope VCE = 400 V, IC = 20 A, VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 200 - J Eoff(2) Turn-off switching losses - 130 - J Total switching losses - 330 - J Turn-on delay time - 37 - ns Current rise time - 12 - ns - 1340 - A/s - 150 - ns - 23 - ns Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope VCE = 400 V, IC = 20 A, di/dt = 1000 A/s, VGE = 15 V, TJ = 175 C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 430 - J Eoff(2) Turn-off switching losses - 210 - J Total switching losses - 640 - J Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 20 A, VR = 400 V, VGE = 15 V, see Figure 28 di/dt = 1000 A/s Min. Typ. Max. Unit - 40 - ns - 320 - nC - 16 - A - 910 - A/s Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 115 - J trr Reverse recovery time - 72 - ns Qrr Reverse recovery charge - 930 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 530 - A/s Err Reverse recovery energy - 307 - J IF = 20 A, VR = 400 V, VGE = 15 V, TJ = 175 C, see Figure 28 di/dt = 1000 A/s DocID024360 Rev 3 5/23 Electrical characteristics 2.1 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17175v1 Ptot (W) Figure 3. Collector current vs. case temperature 160 40 140 35 120 30 100 25 80 20 60 15 40 10 20 5 0 AM17174v1 I C (A) 0 0 25 50 75 0 100 125 150 175 TC (C) Figure 4. Output characteristics (TJ = 25 C) AM17171v1 Ic (A) 15 V 25 50 75 100 125 150 175 TC (C) Figure 5. Output characteristics (TJ = 175 C) AM17172v1 Ic (A) 11 V 70 70 60 60 50 50 15 V 40 11 V 40 13 V 13 V 9V 30 30 9V 20 20 10 10 VGE =7 V VGE =7 V 0 0 1 2 3 4 VCE (V) Figure 6. VCE(SAT) vs. junction temperature VCE(sat) (V) 2.8 AM17176v1 0 4 VCE (V) AM17177v1 VCE (V) TJ = 175C 3.6 3.2 IC = 20A TJ = 25C 2.8 2.0 2.4 1.8 2.0 IC = 10A TJ = - 40C 1.6 1.4 1.2 -50 -25 0 3 VGE = 15V 2.4 1.6 2 4.0 2.6 2.2 1 Figure 7. VCE(SAT) vs. collector current VGE = 15V IC 40A 6/23 0 1.2 25 50 75 100 125 150 175 TJ (C) 0.8 DocID024360 Rev 3 0 10 20 30 40 50 60 70 80 I C (A) STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Figure 8. Collector current vs. switching frequency AM17194v1 Ic [A] Electrical characteristics Figure 9. Forward bias safe operating area AM17179v1 I C (A) Tc = 80C 70 60 10 Tc = 100C 50 10 s 40 1 100 s 1 ms 30 20 0.1 (single pulse TC =25 C, TJ <=175 C; VGE =15 V) rectangular current shape, (duty cycle=0.5, Vcc= 400V Rg=4.7ohm,Vge=0/15V, Tj=175C) 10 0 1 10 f (kHz) Figure 10. Transfer characteristics AM17173v1 IC (A) 0.01 1 10 VCE (V) 100 Figure 11. Diode VF vs. forward current AM17178v1 VF (V) 2.4 70 - 40C 60 2 25C 50 1.6 40 TJ =175 C 30 1.2 TJ=175C 20 -40C 25C 10 7 8 9 10 11 Figure 12. Normalized VGE(th) vs. junction temperature VGE(th) norm (V) AM17181v1 15 20 25 30 35 I F (A) Figure 13. Normalized BVCES vs. junction temperature BVces (V) AM17180v1 norm VGE = 5V 1.1 0.8 10 VGE (V) 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 TJ (C) 0.9 -50 DocID024360 Rev 3 0 50 100 150 TJ (C) 7/23 Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Figure 14. Capacitance variations AM17183v1 C (pF) C ies Figure 15. Gate charge vs. gate-emitter voltage AM17182v1 VGE (V) 16 14 12 1000 10 Coes C res 8 6 100 4 2 0 10 0.1 1 10 0 VCE (V) Figure 16. Switching losses vs. collector current AM17185v1 E (J) 50 75 125 Qg (nC) 100 Figure 17. Switching losses vs. gate resistance AM17184v1 E (J) VCC 400V, VGE= 15V, IC =20 A, TJ = 175C VCC 400V, VGE= 15V, Rg=10, TJ = 175C 1000 25 700 E ON 800 500 600 EON E OFF 400 300 EOFF 200 0 0 10 20 30 40 Ic (A) Figure 18. Switching losses vs. junction temperature AM17186v1 E (J) 100 0 30 40 RG () AM17187v1 E (J) VCC 400V, VGE= 15V, IC = 20 A, Rg= 10 400 20 Figure 19. Switching losses vs. collector emitter voltage 600 450 10 VGE= 15V, TJ = 175 C IC = 20 A, Rg= 10 500 350 EON 400 300 EON 250 300 EOFF EOFF 200 200 150 100 0 8/23 25 50 75 100 125 150 175 TJ (C) 100 150 DocID024360 Rev 3 200 250 300 350 400 450 Vce (V) STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance AM17188v1 ts (ns) VCC= 400V, VGE = 15V, Tj=175 C Ic = 40 A VCC = 400V, VGE = 15V, Tj =175C, Rg = 10 t doff t doff 100 t don 100 t don tr 10 tf 10 tr tf 1 AM17189v1 ts (ns) 0 10 20 30 1 40 Ic (A) Figure 22. Reverse recovery current vs. diode current slope AM17190v1 I rm (A) Vr = 400V, IF = 20 A 0 20 30 40 Rg () Figure 23. Reverse recovery time vs. diode current slope AM17191v1 trr (s) Vr = 400V, IF = 20 A 180 50 10 160 140 40 120 175 C 175 C 30 100 25C 80 20 60 40 10 25 C 20 0 0 0 500 1000 1500 2000 2500 di/dt (A/s) Figure 24. Reverse recovery charge vs. diode current slope AM17192v1 Qrr (nC) 1400 Vr = 400V, IF = 40 A 0 500 1000 1500 2000 2500 di/dt (A/s) Figure 25. Reverse recovery energy vs. diode current slope AM17193v1 Err (J) 800 Vr = 400 V, IF = 20 A 175C 700 1200 600 1000 175C 500 800 400 600 300 25C 25C 400 200 200 100 0 0 0 500 1000 1500 2000 2500 di/dt (A/s) 0 DocID024360 Rev 3 500 1000 1500 2000 2500 di/dt (A/s) 9/23 Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Figure 26. Thermal data for IGBT ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 Figure 27. Thermal data for diode 10/23 DocID024360 Rev 3 tp (s) STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 3 Test circuits Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit AM01504v1 Figure 30. Switching waveform AM01505v1 Figure 31. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 DocID024360 Rev 3 AM01507v1 11/23 Package mechanical data 4 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 12/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID024360 Rev 3 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 32. TO-220 type A drawing 0015988_typeA_Rev_S DocID024360 Rev 3 13/23 Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Table 9. DPAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 14/23 Max. 0.4 0 8 DocID024360 Rev 3 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 33. DPAK (TO-263) drawing 0079457_T Figure 34. DPAK footprint (a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters DocID024360 Rev 3 15/23 Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Table 10. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/23 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024360 Rev 3 5.70 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 35. TO-247 drawing 0075325_G DocID024360 Rev 3 17/23 Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Table 11. TO-3P mechanical data mm Dim. Min. Typ. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 18/23 Max. 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024360 Rev 3 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data Figure 36. TO-3P drawing 8045950_A DocID024360 Rev 3 19/23 Packing mechanical data 5 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Packing mechanical data Table 12. DPAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 20/23 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024360 Rev 3 Min. Max. 330 13.2 26.4 30.4 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Packing mechanical data Figure 37. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 38. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 DocID024360 Rev 3 21/23 Revision history 6 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Revision history Table 13. Document revision history Date Revision 12-Mar-2013 1 Changes Initial release. Document status promoted from preliminary data to production data. Added: 22/23 16-May-2013 2 04-Jun-2013 3 - New root part numbers STGB20V60DF and STGP20V60DF Table 1 on page 1. - Package mechanical data Table 8 on page 12, Table 9 on page 14, Figure 32 on page 13 and Figure 33 on page 15. - Section 2.1: Electrical characteristics (curves) on page 6. Added maximum value for VGE(th) and VF in Table 4: Static characteristics. DocID024360 Rev 3 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. 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