This is information on a product in full production.
June 2013 DocID024360 Rev 3 1/23
23
STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Very high speed switching series
•Tail-less switching off
•Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
•Lead free package
Applications
•Photovoltaic inverters
•Uninterruptible power supply
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
TO-247 TO-3P
TO-220 D²PAK
123
TAB
1
2
3
12
3
TAB
1
3
TAB
Table 1. Device summary
Order code Marking Package Packaging
STGB20V60DF GB20V60DF D²PAK Tape and reel
STGP20V60DF GP20V60DF TO-220 Tube
STGW20V60DF GW20V60DF TO-247 Tube
STGWT20V60DF GWT20V60DF TO-3P Tube
www.st.com
Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
2/23 DocID024360 Rev 3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID024360 Rev 3 3/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 40 A
I
C
Continuous collector current at T
C
= 100 °C 20 A
I
CP(1)
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Pulsed collector current 80 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 40 A
I
F
Continuous forward current at T
C
= 100 °C 20 A
I
FP(1)
Pulsed forward current 80 A
P
TOT
Total dissipation at T
C
= 25 °C 167 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.9 °C/W
R
thJC
Thermal resistance junction-case diode 2.08 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
4/23 DocID024360 Rev 3
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 20 A 1.8 2.2
V
V
GE
= 15 V, I
C
= 20 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C 2.3
V
F
Forward on-voltage
I
F
= 20 A 1.7 2.2 V
I
F
= 20 A T
J
= 125 °C 1.55 V
I
F
= 20 A T
J
= 175 °C 1.3 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2800- pF
C
oes
Output capacitance - 110 - pF
C
res
Reverse transfer
capacitance -64-pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, see Figure 29
-116-nC
Q
ge
Gate-emitter charge - 24 - nC
Q
gc
Gate-collector charge - 50 - nC
DocID024360 Rev 3 5/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V,
see Figure 28
-38-ns
t
r
Current rise time - 10 - ns
(di/dt)
on
Turn-on current slope - 1556 - A/μs
t
d(off)
Turn-off delay time - 149 - ns
t
f
Current fall time - 15 - ns
E
on(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses - 200 - μJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 130 - μJ
E
ts
Total switching losses - 330 - μJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 20 A,
di/dt = 1000 A/μs,
V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-37-ns
t
r
Current rise time - 12 - ns
(di/dt)
on
Turn-on current slope - 1340 - A/μs
t
d(off)
Turn-off delay time - 150 - ns
t
f
Current fall time - 23 - ns
E
on(1)
Turn-on switching losses - 430 - μJ
E
off(2)
Turn-off switching losses - 210 - μJ
E
ts
Total switching losses - 640 - μJ
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V, see Figure 28
di/dt = 1000 A/μs
-40-ns
Q
rr
Reverse recovery charge - 320 - nC
I
rrm
Reverse recovery current - 16 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 910 - A/μs
E
rr
Reverse recovery energy - 115 - μJ
t
rr
Reverse recovery time
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
di/dt = 1000 A/μs
-72-ns
Q
rr
Reverse recovery charge - 930 - nC
I
rrm
Reverse recovery current - 26 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 530 - A/μs
E
rr
Reverse recovery energy - 307 - μJ
Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
6/23 DocID024360 Rev 3
2.1 Electrical chara cteristics (cur ves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. case temperature
Figure 4. Output characteristics (T
J
= 25 °C) Figure 5. Output characteristics (T
J
= 175 °C)
Figure 6. V
CE(SAT)
vs. junction temperature Figure 7. V
CE(SAT)
vs. collector current
AM17175v1
0
20
40
60
80
100
120
140
160
0 255075100125150175
P
tot
(W)
T
C
(°C)
AM17174v1
0
5
10
15
20
25
30
35
40
0 25 50 75 100 125 150 175
I
C
(A)
T
C
(°C)
AM17171v1
9 V
11 V
13 V
15 V
0
10
20
30
40
50
60
70
01234
Ic (A)
V
CE (V)
V
GE =7 V
AM17172v1
9 V
11 V
13 V
15 V
0
10
20
30
40
50
60
70
01234
Ic (A)
V
CE
(V)
V
GE
=7 V
AM17176v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
V
CE(sat)
(V)
T
J
(ºC)
I
C
40A
I
C
= 20A
I
C
= 10A
V
GE
= 15V
AM17177v1
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
0 1020304050607080
V
CE
(V)
I
C
(A)
T
J
= 25°C
T
J
= - 40°C
T
J
= 175°C
V
GE
=15V
DocID024360 Rev 3 7/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics
Figure 8. Collector current vs. switching
frequency Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
Figure 12. Normalized V
GE(th)
vs. junction
temperature Figure 13. Normalized BV
CES
vs. junction
temperature
AM17194v1
0
10
20
30
40
50
60
70
1 10 f (kHz)
Ic [A]
rectangular current shape,
(duty cycle=0.5, Vcc= 400V Rg=4.7ohm,Vge=0/15V, Tj=175°C)
Tc = 100°C
Tc = 80°C
AM17179v1
0.01
0.1
1
10
110100
I
C
(A)
V
CE
(V)
10 μs
100 μs
1 ms
(single pulse T
C
=25 °C,
T
J
<=175 °C; V
GE
=15 V)
AM17173v1
T
J
=175°C
10
20
30
40
50
60
70
7891011
I
C
(A)
V
GE
(V)
-40°C
25°C
AM17178v1
0.8
1.2
1.6
2
2.4
10 15 20 25 30 35
VF(V)
IF(A)
T =175 °C
25°C
-40°C
J
AM17181v1
0.6
0.7
0.8
0.9
1.0
1.1
-50 0 50 100 150
V
GE(th)
norm (V)
T
J(ºC)
V = 5V
GE
AM17180v1
0.9
1.0
1.1
-50 0 50 100 150
BVces
norm (V)
T
J(ºC)
Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
8/23 DocID024360 Rev 3
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
AM17183v1
10
100
1000
0.1 1 10
C (pF)
VCE (V)
C
res
C
oes
C
ies
AM17182v1
0
2
4
6
8
10
12
14
16
0255075100125
V
GE
(V)
Qg (nC)
Figure 16. Switching losses vs. collector
current Figure 17. Switching losses vs. gate resistance
Figure 18. Switching losses vs. junction
temperature F igure 19. Switch ing losses vs. co llec tor
emitter voltage
AM17185v1
0
200
400
600
800
1000
010203040
E (μJ)
Ic (A)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
Rg=10Ω, T
J
= 175°C
AM17184v1
100
300
500
700
010203040
E (μJ)
RG(Ω)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
I
C
=20 A, T
J
= 175°C
AM17186v1
100
150
200
250
300
350
400
450
0 25 50 75 100 125 150 175
E (μJ)
T
J
(ºC)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
I
C
= 20 A, Rg= 10 Ω
AM17187v1
100
200
300
400
500
600
150 200 250 300 350 400 450
E (μJ)
Vce (V)
E
ON
E
OFF
V
GE
= 15V, T
J
= 175 °C
I
C
= 20 A, Rg= 10 Ω
DocID024360 Rev 3 9/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
AM17188v1
1
10
100
010203040
t
s
(ns)
Ic (A)
V
CC
= 400V, V
GE
= 15V,
Tj =175
°
C, Rg = 10 Ω tdoff
tdon
tr
tf
AM17189v1
tf
1
10
100
0 10203040
t
s
(ns)
Rg (Ω)
V
CC
= 400V, V
GE
= 15V,
Tj=175 °C Ic = 40 A
tdoff
tdon
tr
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
AM17190v1
0
10
20
30
40
50
0 500 1000 1500 2000 2500
I
rm
(A)
di/dt (A/μs)
V
r
= 400V, I
F
= 20 A
25°C
175 °C
AM17191v1
0
20
40
60
80
100
120
140
160
180
0 500 1000 1500 2000 2500
trr (μs)
di/dt (A/μs)
V
r
= 400V, I
F
= 20 A
25 ºC
175 ºC
AM17192v1
0
200
400
600
800
1000
1200
1400
0 500 1000 1500 2000 2500
Qrr (nC)
di/dt (A/μs)
V
r= 400V,IF= 40 A
25°C
175°C
AM17193v1
0
100
200
300
400
500
600
700
800
0 500 1000 1500 2000 2500
Err (μJ)
di/dt (A/μs)
V
r
= 400 V, I
F
= 20 A
175°C
25°C
Electrical characteristics STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
10/23 DocID024360 Rev 3
Figure 26. Therma l data for IGBT
Figure 27. Thermal data for diode
10-5 10-4 10-3 10-2 10-1
t
p(s)
10-2
10-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/t
tp
t
Single pulse
δ=0.5
ZthTO2T_B
DocID024360 Rev 3 11/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Test circuits
3 Test circuits
Figure 28. Test circuit for inductive load
switching Figure 29. Gate charge test circuit
Figure 30. Switching waveform Figure 31. Diode recovery time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
ICTd(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
12/23 DocID024360 Rev 3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 8. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
DocID024360 Rev 3 13/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data
Figure 32. TO-220 type A drawing
0015988_typeA_Rev_S
Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
14/23 DocID024360 Rev 3
Table 9. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
DocID024360 Rev 3 15/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data
Figure 33. D²PAK (TO-263) drawing
Figure 34. D²PAK footprint
(a)
a. All dimension are in millimeters
0079457_T
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
16/23 DocID024360 Rev 3
Table 10. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID024360 Rev 3 17/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data
Figure 35. TO-2 47 drawing
0075325_G
Package mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
18/23 DocID024360 Rev 3
Table 11. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
DocID024360 Rev 3 19/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Package mechanical data
Figure 36. TO-3P drawin g
8045950_A
Packing mechanical data STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
20/23 DocID024360 Rev 3
5 Packing mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
DocID024360 Rev 3 21/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Packing mechanical data
Figure 37. Tape
Figure 38. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
22/23 DocID024360 Rev 3
6 Revision history
Table 13. Document revision history
Date Revision Changes
12-Mar-2013 1 Initial release.
16-May-2013 2
Document status promoted from preliminary data to production data.
Added:
– New root part numbers STGB20V60DF and
STGP20V60DF Table 1 on page 1.
– Package mechanical data Table 8 on page 12, Table 9
on page 14, Figure 32 on page 13 and Figure 33 on
page 15.
–Section 2.1: Electrical characteristics (curves) on
page 6.
04-Jun-2013 3 Added maximum value for V
GE(th)
and V
F
in
Table 4: Static
characteristics.
DocID024360 Rev 3 23/23
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
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