Si PIN photodiodes
S1223 series
For visible to near IR, precision photometry
www.hamamatsu.com 1
Optical measurement equipmentHigh sensitivity in visible to near infrared range
Analytical equipment, etc.
High reliability
High-speed response
S1223: fc=30 MHz
S1223-01: fc=20 MHz
Low capacitance
Structure
Absolute maximum ratings
Electrical and optical characteristics (Ta=25 °C)
Features Applications
Parameter S1223 S1223-01 Unit
Dimensional outline (1) (2) -
Window material Borosilicate glass -
Package TO-5 -
Photosensitive area size 2.4 × 2.8 3.6 × 3.6 mm
Effective photosensitive area 6.6 13 mm2
Parameter Symbol S1223 S1223-01 Unit
Reverse voltage VR max 30 V
Power dissipation P 100 mW
Operating temperature
Topr -40 to +100 °C
Storage temperature Tstg -55 to +125 °C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
Parameter Symbol Condition S1223 S1223-01 Unit
Min. Typ. Max. Min. Typ. Max.
Spectral response range λ-
320 to 1100
--
320 to 1100
-nm
Peak sensitivity wavelength
λp- 960 - - 960 - nm
Photosensitivity S
λ=λp-0.6- -0.6-
A/W
λ=660 nm - 0.45 - - 0.45 -
λ=780 nm - 0.52 - - 0.52 -
λ=830 nm - 0.54 - - 0.54 -
Short circuit current Isc 100 lx 56.3-1013- μA
Dark current IDVR=20 V - 0.1 10 - 0.2 10 nA
Temp. coeffi cient of IDTCID - 1.15 - - 1.15 - times/°C
Cutoff frequency fc VR=20 V, -3 dB -30- -20-
MHz
Terminal capacitance Ct
V
R
=20 V, f=1 MHz
-10- -20- pF
Noise equivalent power NEP VR=20 V, λ=λp-
9.4 × 10
-15
--
1.3
×
10-14
-W/Hz1/2
Si PIN photodiodes S1223 series
2
Spectral response
Dark current vs. reverse voltage
Photosensitivity temperature characteristic
Wavelength (nm)
Photosensitivity (A/W)
0
300 400 600500
0.1
0.2
0.3
0.4
0.5
800 900700 1000 1100
0.6
0.7 (Typ. Ta=25 °C)
Wavelength (nm)
Temperature coefficient (%/°C)
-0.5
300 400 500 600 700
(Typ.)
800 900 1000 1100
0
+0.5
+1.0
+1.5
KPINB0143EB
KPINB0145EA
KPINB0144EB
Terminal capacitance vs. reverse voltage
Reverse voltage (V)
Terminal capacitance
1 pF
0.1 1 10 100
10 pF
100 pF
1 nF (Typ. Ta=25 °C, f=1 MHz)
S1223-01
S1223
Reverse voltage (V)
Dark current
1 pA0.1 1 10 100
10 pA
100 pA
1 nA
10 nA (Typ. Ta=25 °C)
S1223
S1223-01
KPINB0146EA
Cat. No. KPIN1050E02 Feb. 2013 DN
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
Information described in this material is current as of February, 2013.
Si PIN photodiodes S1223 series
3
Dimensional outlines (unit: mm)
Y
X
The glass window may extend
a maximum of 0.2 mm above
the upper surface of the cap.
Distance from photosensitive
area center to cap center
-0.6≤X≤0
-0.3≤Y≤+0.3
Connected to case
Photosensitive area
3.6 × 3.6
Window
5.9 ± 0.1
9.1 ± 0.2
8.1 ± 0.1
5.08 ± 0.2
0.3
20 4.1 ± 0.2
2.8
Photosensitive surface
Glass
0.45
Lead
5.08 ± 0.2
The glass window may extend
a maximum of 0.2 mm above
the upper surface of the cap.
Distance from photosensitive
area center to cap center
-0.3≤X≤+0.3
-0.3≤Y≤+0.3
Connected to case
Photosensitive area
2.4 × 2.8
9.1 ± 0.2
8.1 ± 0.1
Window
5.9 ± 0.1
Y
X
20 4.1 ± 0.2
2.8
Photosensitive surface
Glass
0.45
Lead
KSPDA0193ECKSPDA0196EB
(2) S1223-01(1) S1223
