IRANSYS ELECTRONICS LIMITED BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Features 310 mW Power Dissipation Ideally Suited for Automatic Insertion : : : : T-2 Epitaxial Planar Die Construction so S For Switching, AF Driver and Amplifier +] fea Dim | Min | Max Applications x A 0.37 | 0.51 Complementary NPN Types Available (BC817) [] B 1.49 | 1.40 Cc 2.10 2.50 - TOP VIEW b Mechanical Data D | 089 | 1.05 Case: SOT-23, Molded Plastic [e| le] E | 045 | 061 Terminals: Solderable per MIL-STD-202, LEI G 1.78 | 2.05 Method 208 H 2.65 | 3.05 Mounting Position: Any > J 0.013 | 0.15 Pin Connections: See Diagram M K 089 | 1.10 Marking: | BC807-16 5A + +I Toa Doe BC807-25 5B J L e : : BC807-40 5C M 0.076 | 0.178 Approx. Weight: 0.008 grams All Dimensions in mm Maximum Ratings @ Ta = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Emitter Voltage -VcEO 45 Vv Emitter-Base Voltage -VEBO 5.0 mA Collector Current -I 500 mA Peak Collector Current -lom 1000 mA Peak Emitter Current -lEm 1000 mA Power Dissipation at Tsp = 50C (Note 1) Pg 310 mw Operating and Storage Temperature Range Tj, Tsta -65 to +150 C Electrical Characteristics @ Ta = 25C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DC Current Gain Current Gain Group -16 100 250 -Vce = 1.0V, -lc = 100MA -25 160 400 -40 h 250 _ 600 _ Current Gain Group -16 FE 60 -Vce = 1.0V, -Ilc = 300MA -25 100 -40 170 _ Thermal Resistance, Junction to Substrate Backside R usp _ _ 320 KW | Note 1 Thermal Resistance, Junction to Ambient Air R va _ _ 400 KW | Note 1 Collector-Emitter Saturation Voltage -VcesaT) | _ 0.7 V -lc = 500mA, Ip = 50MA Base-Emitter Voltage -VBE _ 1.2 V Voce = 1.0V, -lc = 300mA Collector-Emitter Cutoff Current -Ices _ 100 UA Woe - Bey, Tj) = 150C Emitter-Base Cutoff Current -leBo 100 nA | -Vep=4.0V : : -Voe = 5.0V, -lc = 10mA, Gain Bandwidth Product fr 100 MHz | = Sombuz Collector-Base Capacitance CcBo _ _ 12 pF -Vcp = 10V, f = 1.0MHz Notes: 1. Device mounted on ceramic substrate 0.7mm; 2.5cm2 area.-Voesat, COLLECTOR SATURATION VOLTAGE (V) -l5, COLLECTOR CURRENT (mA) Py, POWER DISSIPATION (mW) 500 400 300 200 100 400 1000 See Note 1 T,=25C f = 20MHz 300 200 \ 100 f;, GAINBANDWIDTH PRODUCT (MHz) 100 \ 0 10 0 100 200 1 10 100 1000 Tsg, SUBSTRATE TEMPERATURE (C) -lo, COLLECTOR CURRENT (mA) Fig. 1, Power Derating Curve Fig. 2, Gain-Bandwidth Product vs Collector Current 1000 typical Voge =1 limits TT atT, = 25C LT lof 10 z < oO kK Zz nmr mc 100 iam a) oO Oo a i = = = 10 0.1 1 10 100 1000 0.1 1 10 100 1000 -lo, COLLECTOR CURRENT (mA) -l, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current Fig. 4, DC Current Gain vs Collector Current 100 <= E - 80 Zz wl ia cc > O 60 cc oO Fe oO 4 40 ) oO 5 Oo "20 0 0 1 2 0 10 20 -Vcg, COLLECTOR-EMITTER VOLTAGE (V) -Vce, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics Fig. 6, Typical Emitter-Collector Characteristics