© 2006 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
DSS 10-0045B
0623
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAV TC = 135°C; rectangular, d = 0.5 10 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 160 A
EAS IAS = 13 A; L = 180 µH; TVJ = 25°C; non repetitive 24 mJ
IAR VA =1.5 • VRRM typ.; f=10 kHz; repetitive 1.3 A
(dv/dt)cr 1000 V/µs
TVJ -55...+150 °C
TVJM 150 °C
Tstg -55...+150 °C
Ptot TC = 25°C 75 W
Mdmounting torque 0.4...0.6 Nm
Weight typical 2 g
IFAV =10A
VRRM =45V
VF= 0.46 V
VRSM VRRM Type
V V
45 45 DSS 10-0045B
Symbol Conditions Characteristic Values
typ. max.
IR VR= VRRM;T
VJ = 25°C 5 mA
VR= VRRM;T
VJ = 100°C 50 mA
VFIF = 10 A; TVJ = 125°C 0.46 V
IF = 10 A; TVJ = 25°C 0.51 V
IF = 20 A; TVJ = 125°C 0.64 V
RthJC 1.7 K/W
RthCH 0.5 K/W
Features
International standard package
Very low VF
Extremely low switching losses
Low IRM-values
Epoxy meets UL 94V-0
Applications
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Dimensions see Outlines.pdf
Power Schottky Rectifier
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified.
AC
C
A
TO-220 AC
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
© 2006 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
DSS 10-0045B
0623
0.0 0.2 0.4 0.6 0.8 1.0
1
10
100
0 1020304050
0.01
0.1
1
10
100
1000
0 102030
0
10
20
30
40
0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
0 40 80 120 160
0
10
20
30
40
IF(AV)
TC
°C
IF(AV)
t
s
K/W
IFSM
tP
A
0 10203040
100
1000
CT
IR
IF
A
VFVRVR
V
pF
V
mA
A
P(AV)
W
ZthJC
V
Single Pulse
DSS 10-0045B
A
µs
TVJ=150°C
125°C
100°C
75°C
25°C
TVJ =
150°C
125°C
25°C
TVJ= 25°C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
0.08
D=0.5
0.17
DC
50°C
0.33
0.25
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode