NTE5810 & NTE5811,
NTE5870 thru NTE5891
Silicon Power Rectifier Diode, 12 Amp, DO4
Description:
The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma-
chine tool controls.
Features:
DHigh Surge Current Capability
DHigh Voltage Available
DDesigned for a Wide Range of Applications
DAvailable in Anode−to−Case or Cathode−to−Case Style
Ratings and Characteristics:
Average Forward Current (TC = +144°C Max), IF(AV) 12A....................................
Maximum Forward Surge Current, IFSM
50Hz 230A......................................................................
60Hz 240A......................................................................
Fusing Current, I2t
50Hz 260A2s....................................................................
60Hz 240A2s....................................................................
Fusing Current, I2pt 3580A2ps.........................................................
Maximum Reverse Recovery Voltage Range, VRRM 50 to 1200V..............................
Voltage Ratings: (TJ = +175°C, Note 1)
NTE Type Number VRRM−Max
Repetitive Peak
Reverse Volt.
(V)
VRSM−Max
Non−Repetitive Peak
Reverse Voltage
(V)
VR−Max.
Direct Reverse
Voltage
(V)
VR(SR)
Minimum Avalanche
Voltage
(V)
IRM−Max
Reverse Current
Rated VRRM
(mA)
Cathode
to Case
Anode
to Case
5870 5871 50 75 50 −12
5872 5873 100 150 100 −12
5874 5875 200 275 200 −12
5876 5877 300 385 300 −12
5878 5879 400 500 400 500 12
5880 5881 500 613 500 626 12
5882 5883 600 725 600 750 12
5886 5887 800 950 800 950 12
5890 5891 1000 1200 1000 1150 12
5810 5811 1200 1400 1200 1350 12
Electrical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Average Forward Current IF (AV) 180° sinusoidal condition, TC = +144°C Max 12 A
Maximum RMS Forward Current IF(RMS) 19 A
Maximum Peak One−Cycle
Non−Repetitive Surge Current
IFSM t = 10ms Sinusoidal Half Wave,
No voltage reapplied
225 A
t = 8.3ms 235 A
t = 10ms 100% rated voltage reapplied,
TJ = +175°C
265 A
t = 8.3ms 280 A
Maximum I2t for Individual Device
Fusing
I2tt = 10ms 100% rated voltage reapplied,
Initial TJ = +175°C
351 A2s
t = 8.3ms 320 A2s
Maximum I2pt I2ptt = 0.1 to 10ms, No voltage reapplied, Note 1 3511 A2pt
Maximum Peak Forward Voltage VFM IFM = 38A, TJ = +25°C 1.26 V
Maximum Value of Threshold
Voltage
VM (TO) TJ = +175°C 0.68 V
Maximum Value of Forward Slope
Resistance
rtTJ = +175°C 13.51 mΩ
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal−Mechanical Specifications:
Parameter Symbol Test Conditions Rating Unit
Maximum Operation Junction Temperature TJ−65 to + 175 °C
Maximum Storage Temperature Tstg −65 to + 200 °C
Maximum Internal Thermal Resistance
Junction−to−Case
RthJC DC operation 2.0 K/W
Thermal Resistance, Case−to−Sink RthCS Mounting surface flat, smooth and
greased
0.5 K/W
Mounting Torque TNon−lubricated threads 1.2 − 1.5
(10.5 − 13.5)
m•N
(in•lb)
Approximate Weight wt 11 (0.25) g (oz)
.060 (1.52)
Dia Min
.405
(10.3)
Max
1.250 (31.75) Max
.437
(11.1)
Max .175 (4.45) Max
.424 (10.8)
Dia Max
.250 (6.35) Max
.453
(11.5)
Max
10−32 NF−2A
