MCH6440
No. A1202-1/4
Features
•1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 55 V
Gate-to-Source Voltage *1VGSS 10 V
Drain Current (DC) ID0.6 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 2.4 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (2000mm
2
✕0.8mm)
1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
*1 Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 55 V
Zero-Gate Voltage Drain Current IDSS VDS=55V, VGS=0V 1 μA
Gate-to-Source Leakage Current IGSS VGS=8V, VDS=0V 1 μA
Cutoff Voltage VGS(off) VDS=10V, ID=100μA 0.4 1.3 V
Forward T ransfer Admittance ⏐yfs⏐VDS=10V, ID=300mA 420 700 mS
RDS(on)1 ID=300mA, VGS=4V 2.0 2.7 Ω
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=150mA, VGS=2.5V 2.1 3.0 Ω
RDS(on)3 ID=10mA, VGS=1.5V 3.0 6.0 Ω
Marking : ZP Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA1202A
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
60408 TI IM TC-00001426 / 42308PE TI IM TC-00001344
SANYO Semiconductors
DATA SHEET
MCH6440 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
MCH6440
No. A1202-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 30 pF
Output Capacitance Coss VDS=20V, f=1MHz 6.1 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 3.9 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 4.1 ns
Rise T ime trSee specified Test Circuit. 5.6 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 8.6 ns
Fall T ime tfSee specified Test Circuit. 8.4 ns
Total Gate Charge Qg VDS=30V, VGS=4V, ID=600mA 0.87 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=4V, ID=600mA 0.12 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=4V, ID=600mA 0.37 nC
Diode Forward Voltage VSD IS=600mA, VGS=0V 0.94 1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7022A-009
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
654
123
654
123
P.G 50Ω
G
S
D
ID=600mA
RL=50Ω
VDD=30V
VOUT
MCH6440
VIN
4V
0V
VIN
PW=10μs
D.C.≤1%
ID -- VDS ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
0.1
0.6
0.2
0.3
0.4
0.5
0
0
0.2
0.4
0.5
0.3
0.1
0.6
0
2.01.61.20.2 0.4 0.8 1.81.40.6 1.0
IT13418
0 1.00.5 2.0 2.51.5 3.0
IT13419
Ta=75
°
C
--2
5
°
C
VGS=1.2V
VDS=10V
8.0V
1.8V
4.0V
2.5V
6.0V
25°C
1.5V
MCH6440
No. A1202-3/4
VGS -- Qg
SW Time -- IDCiss, Coss, Crss -- VDS
⏐yfs⏐ -- ID
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward T ransfer Admittance, ⏐yfs⏐ -- mS
Drain-to-Source Voltage, VDS -- V
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
IS -- VSD
Diode Forward Voltage, VSD -- V
Source Current, IS -- mA
RDS(on) -- VGS RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ambient Temperature, Ta -- °C
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT13422
7
1.0
10
5
3
2
7
2
7
100
5
3
5
3
2
IT13424
0.01 0.1
23 57 3 57
1.0
2
td(on)
td(off)
tf
tr
VDD=30V
VGS=4V
0 0.1 0.3 0.50.2 0.4 0.90.70.6 0.8
0
0.5
1.0
3.0
2.0
1.5
3.5
2.5
4.0
IT13426
VDS=30V
ID=600mA
0.001
0.01 0.01
23 57 2 0.1
357 2 1.0
357
0.1
7
5
3
2
2
1.0
7
5
3
2
VDS=10V
75
°C
Ta=--25°
C
25
°
C
010305015 35 5520 405254560
10
5
3
7
3
2
2
7
5
1.0
IT13425
Ciss
Coss
Crss
f=1MHz
3
IT13423
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
7
5
3
2
7
5
3
2
7
5
3
2
0.1
VGS=0V
--25°C
25
°
C
Ta=
75
°
C
1.0
IT13427
2
3
5
7
2
0.1
0.01 223 57
1.0 2357
100.1
IDP=2.4A
ID=0.6A
Operation in this
area is limited by RDS(on).
100ms
1ms
DC operation (Ta=25
°C
)
3
2
3
5
7
5
1.0
357
100
100μs
10ms
IT13421
01 4326578
IT13420
9
0
2
1
3
5
7
4
6
8
Ta=25°C
--60
0
3
4
1
5
2
6
--40 --20 0 20 40 60 80 100 120 140 160
VGS=2.5V, ID=0.15A
VGS=1.5V, ID=0.01A
VGS=4.0V, ID=0.3A
ID=0.01A
0.3A
0.15A
PW≤10μs
Ta=25°C
Single pulse
When mounted on ceramic substrate (2000mm
2
✕0.8mm)
Ciss, Coss, Crss -- pF
MCH6440
No. A1202-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
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party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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PS
Note on usage : Since the MCH6440 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
0
020 40
0.3
0.6
0.9
1.2
1.8
1.5
60 80 100 120 140 160
IT13428
PD -- Ta
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- W
When mounted on ceramic substrate
(2000mm
2
✕0.8mm)
This catalog provides information as of June, 2008. Specifications and information herein are subject
to change without notice.
