INTERNATIONAL SEMICOND T-OT-1T 49E D MM 9000378 ooO00004 231 MA ISEN VOLTAGE VARIABLE CAPACITANCE (TUNING) DIODES PRODUCT Very High Q Very High Q High Q HIGHLIGHTS Low Voltage Intermediate Voltage Low Voltage Low Voltage High Voltage ( Low Leakage Low Leakage General Purpose Low Leskage Low Leakage JEDEC CAP Q CaP Q CAP Q CaP Max. CAP Mox. Ratie [04.0 V Ratio [04.0 V Ratio |@4.0 V Ratio [Working Ratio [Working Types Device [2-30 V/50 MHz] Device [2-40 V/50 MHz! Device |2~30 Vi50 MHz|Device [0.1-4 Vivottage {Device 0.1-4 Voltage Type Min. Min. Type Nin. Min, Type Min. Min. Type Min. | (MWV Type Min. 1 (MWV 3.9 JINS458Al 2.5 600 4.7 JINS45QAE 2.6 600 INS440A] 2.4 450 5.6 JiNS460A] 2.6 600 Ct 6.8 JINS461A] 2.7 600 |INS68i4 3.f 600 INSA44Al 2.5 450 |IN4786A 2.4 25 [N4B0tA 2.4 00 Norninal 8.2 |INS462A] 2.8 600 |1N5682A 3.1 600 INS442A) 2.5 450 |[INA7TETA 2.4 25 [iN4802Aa 2.4 100 Capacitance] 10 INS5463A} 2.8 550 |INS663A] 3.2 550 |JiNS443A) 2.6 400 [\N478B8A 2.4 25 [IN4803Al 2.4 100 pF 12 JINS4G4A| 2.8 550 |1N5S684A) 3.2 350 INSAAAAL 2.6 400 [;H478SA 2.4 25 fiN4804A 2.4 100 +/- 10% 15 [INS465A] 2.8 550 /1NS5685A 3.2 550 INS445A) 2.6 400 [N4790A 2.4 25 [f\iN4805A 2.4 100 VWr=4.0 V 18 HNS466GA] 2.9 500 |1NS5S686A 3.2 500 INS446Al 2.6 350 ['N4791A 2.4 20 IN4BOGA 2.4 90 f=1.0 MHz] 20 [INS5467A] 2.9 500 INS447A] 2.6 350 22 FINS4E8AL 2.9 500 jiN5687A 3.3 800 INS448Al 2.6 350 |[!N4792A 2.4 20 [\N4807A 2.4 90 27 JINSAGOAL 2.9 500 jiNS688A 3.3 500 INS449A) 2.6 350 |{NA47O3A 2.4 20 [.N4808A 2.4 65 33 JINS470A] 2.9 300 |INS68SA 3.3 00 INS450Al 2.6 350 JtN4794A 2.4 20 N4809A 2.4 60 39 [INS471A} 2.9 450 |INS690A 3.3 450 INS451A] 2.6 300 = |IN4795A 2.3 20 [IN4B10A 2.3 55 47 JINS472A] 2.9 400 |1NS5691A) 3.3 400 IN5452A] 2.6 250 |iNA796A 2.3 20 =fiN4BiTA 2.3 50 56 [INS473A) 2.9 300 |iNS692A 3.3 300 TNS453A) 2.6 200 [INA7TO7TA 2.3 15) AN4812A 2.3 40 68 HiNS474A] 2.9 250 J1NS6O3A 3.3 250 INS454Al 2.7 175 |IN47SBA 2.3 15 IN4B ISA 2.3 30 82 JINSA75A] 2.9 225 [iNS694A 3.3 225 'N5455Al 2.7 178 ~ [IN4799A 2.3 "S [N4814A 2.3 20 100 JINS476A} 2.9 200 JINS695A) 3.3 200 INS456A] 2.7 178 =|{N4800A 2.2 15 FN485A 2.2 20 Copacnance No euffix = 20%, A = 10%, B = 5%, C = 2%, 0 = 1% PRODUCT High Q PRODUCT High Q HIGHLIGHTS High Voltage High Q HIGHLIGHTS Low Voltage Low Voltage Low Leakage High Voltage General Purpose General Purpose CAP Q CaP Q CaP Q CaP Q JEDEC Ratio 104.0 Ratio [04.0 V ISI Ratio [@4.0 V Ratio 194.0 V Types Device | 4-60 Vi50 MHa Device 4-60 V/50 MHz Types Device [4-25 Vi50 MHz Device {2-20 Vi50 MHz Type Min. Min. Type Min. Min. Type _ | Min. Min. Type Min. Min. 3.9 3.9 4.7 4.7 5.6 5.6 Ct 6.8 |} iN5139 2.7 350 |i NS896A 2.7 450 Ct 6.8 vC1620 2.0 300 Nominal | 8.2 INS697A | 2.7 450 Nominal | 7.0 vvc1622| 2.0 300 Capacitance] 1 1N5140 2.8 300 [1NS86G8A 2.8 400 Capacitance} 10 VVC1624 2.0 300 pr 12 JINS141 2.8 300 |INS6ORA 2.8 400 pF 12 VVC 1626 2.0 300 +/~ 10% | 15 JIN5142] 2.8 250 |<NS5S700A] 2.8 400 +/- 10% | iS |vve733} 1.8 30 |vvc1628] 2.0 250 Vr=4.0 V | 18 |1N5143] 2.8 250 |INS701A/ 2.9 375 Vr=4.0 V | ia |vvc736] 1.8 25 |vvc'630/ 2.0 250 f=1.0 MHz {| 20 f=1.0 MHz | 20 VVC1632] 2.0 250 22 | INS144 3.2 200 |1N5702A 3.2 375 22 |VVC7Ai 1.8 25 |lvvc1634 2.0 250 27 J{NSt45] 3.2 200 |1N5703A 3.2 350 27 |VVC746 1.8 25 |vvc1636 2.0 200 33 (1N5146 3.2 200 |1NS704A 3.2 3350 33 | vvC747 1.9 20 Ivvc1838 2.0 200 39 PINS147] 3.2 200 |INS705A] 3.2 325 39 |vve7s: | 1.9 20 {vvc1640} 2.6 200 47 [1N5148 3.2 200 11N5706A 3.2 300 47 (VVC754 1.9 18 VVC1642 2.0 200 56 1N5S707A 3.2 225 56 VVC1644 2.0 1850 68 INS708A | 3.2 175 68 |vvc7s9| 2.0 158 |vvcte4e| 2.0 150 82 INS7O9A | 3.2 150 82 j;vvC763/ 2.0 10 [VVC1648! 2.0 150 100 INS710A} 3.2 150 100 |vC766{ 2.0 10 |vvc1650l 2.0 150 Capacitance No auttix=10%, A=S% No suffix=20%, B=5% Tolerance C=2%, Dale Ct = Nominal Capacitance ~ Measure of the capacitance at In~House Voltage Variable Capacitance (VVC) Diode one specitied voltage. Cross Reference Guide Cr = Capacitance Ratio Ratio of the capacitance at two seperate voltages, usually operating enda of the CV curve. Teledyne cobi International Motorola Crystalonica TRW SermIconductor Semiconductor Q = Figure Of Merit - The same figure of merit that Is Myv823 -Mv840 CvB30~-Cva4d WE738-WWC768 WC738-VVC786 widely used for capacitors and Mvia23-mvi6e!o | CIBZS-CvIBSO wete2o-we1asa | w01s20-we18so colin and ftw an Indicator of how MyISES-MVvIB78 5107-VG239 PGIG7-PS347 | YWI'866-WVC 1878 WC 1866-~VVC 1878 VIGO = W03276- 76~ good @ capacitor the tuning vacorv9e7e | vasor-veeze | weszea-wesso1 | weszes-wesset dlode Is. W7=VIOG VW7=V1I00 WC3302-WWC3314 WC3302-WE3314 VSO0 -V9B2 waoc~ves2 | wess1s-wves327 | we3315-we3327 WAIO7=VAI73 | PCIO7-PCI4t | wwO3328~wo3347) | WC3328-WC3347