Mechanical Data
• Case: SOT-323 Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.005 grams (approx.)
• Device Marking: BC807-16W 5A
BC807-25W 5B
BC807-40W 5C
BC807-16W
BC807-25W
BC807-40W
PNP Silicon
General Purpose
Transistors
Features
• Capable of 0.2Watts of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 50V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=10mAdc, IB=0)
45 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=10uAdc, IE=0)
50 --- Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage
(I
E=1.0uAdc, IC=0)
5.0 --- Vdc
ICBO Collector Cutoff Current
(VCB=20Vdc,I E=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(VCE=20V dc,I B=0)
--- 0.2 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, I C=0)
--- 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(I
C=100mAdc, VCE=1.0Vdc)
BC807-16W
BC807-25W
BC807-40W
100
160
250
250
400
600
---
---
---
hFE(2) DC Current Gain
(I
C=500mAdc, VCE=1.0Vdc)
40 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=500mAdc, IB=50mAdc)
--- 0.7 Vdc
VBE(on) Base-Emitter Voltage
(I
C=500mAdc,VCE=1Vdc)
--- 1.2 Vdc
SMALL SIGNAL CHARACTERISTICS
fTCurrent-Gain-Bandwidth Product
(VCE=5.0V, f=100MHz, I C=10mA)
80 --- MHz
SOT-323
Revision: 1 2008/11/04
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of 4
Cob
Collector output capacitance
(VCB=10V, f=1MHz)
10 pF
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .079 .087 2.00 2.20
D .026 Nominal 0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000 .004 .000 .100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .012 .016 .30 .40
A
C
B
D
E
F
GH
1.90
.7
0.90
.
E
B
C
K
DIMENSIONS