RECTRON 1N4448W SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere FEATURES * Fast Switching Speed * Surface Mount Package ldeally Suited for Automatic Insertion * For General Purpose Switching Applicationgs * High Conductance SOD-123 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.01 gram .110(2.800) .102(2.600) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .006(.150) .026(.650) .018(.450) .067(1.700) .059(1.500) .152(3.850) .140(3.550) .003(.080) * * * * * .049(1.250) .041(1.050) Ratings at 25 o C ambient temperature unless otherwise specified. REF .020(0.500) Single phase, half wave, 60 Hz, resistive or inductive load. .004(.100) .000(0.00) For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted) RATINGS Non-Repetitive Peak Reverse Voltage Maximum Repetitive Peak Reverse Voltage Maximum Working Peak reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Forward Comtinuous Current Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current @t=1.0uS @t=1.0S SYMBOL 1N4448W UNITS VRM VRRM VRWM VR VRMS IFM IO 100 Volts 75 Volts 53 500 250 mAmps mAmps Volts IFSM 4.0 2.0 Amps Typical Reverse Recovery Time (Note 1) Trr 4 nS Typical Junction Capacitance (Note 2) CJ 4 pF Maximum Power Dissipation (Note 3) PD R JA 400 mW Typical Thermal Resistance Operating and Storage Temperature Range O TJ, TSTG 315 -65 to + 150 ELECTRICAL CHARACTERISTICS (@TA=25 OC unless otherwise noted) SYMBOL CHARACTERISTICS 1N4448W UNITS 0.715 0.855 1.0 25 Volts 25 nAmps 2.5 uAmps Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current @IF=1.0mA @IF=10mA @IF=50mA @IF=150mA @VR=20V @VR=75V VF IR . Measured at I F =I R =10mA, I RR =0.1I R And R L =100 . NOTES : 1. 2. Measured at 1MHz and applied reverse voltage of 0 volts. 3. Part mounted on FR-4 PC board with minimunm recommended pad layout. C/W O C 2006-3 RATING AND CHARACTERISTICS CURVES ( 1N4448W ) 100 IF, FORWARD CURRENT (mA) Pd, POWER DISSIPATION (mW) 300 200 100 0 0 Ta=50OC 75 125 100 Ta=85OC 1 150 0 200 O TA, AMBIENT TEMPERATURE ( C) FIG.1 Power Derating Curve 600 800 1000 FIG.2 Typical Forward Chatacteristics 2.5 trr, REVERSE RECOVERY TIME(nS) IR, LEAKAGE CURRENT (A) 400 VF, FORWARD VOLTAGE (mV) 10.0 Ta=100OC 1.0 Ta=75OC 0.10 Ta=50OC Ta=25OC O Ta=0 C 0.01 O Ta=-30 C 0.001 Ta=0OC Ta=30OC 0.1 50 25 Ta=25OC 10 0 60 40 20 80 VR, REVERSE VOLTAGE (V) 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) FIG.3 Typical Reverse Characteristics FIG.4 Reverse Recovery Time vs. vs. Forward Current CT, TOTAL CAPCITANCE (pF) 4 f=1 MHz 3 2 1 0 0 1 2 3 4 5 6 IF, FORWARD CURRENT (mA) FIG.5 Total Capacicance vs vs. s.Reverse Reverse Voltage RECTRON