SMALL SIGNAL DIODE
VOLTAGE RANGE 75 Volts CURRENT 250 mAmpere
RECTRON
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Fast Switching Speed
* Surface Mount Package ldeally Suited for
Automatic Insertion
* For General Purpose Switching Applicationgs
* High Conductance
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.01 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N4448W
SOD-123
MAXIMUM RATINGS
(@ TA=25
OC unless otherwise noted)
NOTES : 1. Measured at IF=IR=10mA, IRR=0.1IR And RL=100
.
2. Measured at 1MHz and applied reverse voltage of 0 volts.
3. Part mounted on FR-4 PC board with minimunm recommended pad layout.
ELECTRICAL CHARACTERISTICS
(@TA=25
OC unless otherwise noted)
Dimensions in inches and (millimeters)
2006-3
RATINGS
Non-Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Forward Comtinuous Current
Non-Repetitive Peak Forward Surge Current
Maximum Power Dissipation (Note 3)
Operating and Storage Temperature Range
SYMBOL 1N4448W
VRM
VRMS
IFM
IFSM
PD
TJ, TSTG
VR
Volts
Volts
mAmps500
Maximum Average Forward Rectified Current IOmAmps250
4.0
2.0
400
Typical Junction Capacitance (Note 2) CJ4
-65 to + 150
Amps
mW
pF
Typical Reverse Recovery Time (Note 1) Trr 4 nS
OC
UNITS
Typical Thermal Resistance R
ΘJA
315 OC/W
100
Maximum Working Peak reverse Voltage VRWM Volts75
Maximum Repetitive Peak Reverse Voltage VRRM
53
CHARACTERISTICS
Maximum Instantaneous Reverse Current
V
F
SYMBOL
I
R
UNITS
Maximum Instantaneous Forward Voltage
Volts
@IF=1.0mA
@VR=20V
@VR=75V
@IF=10mA
@t=1.0uS
@t=1.0S
@IF=50mA
@IF=150mA
0.715
25
2.5
0.855
1.0
25 nAmps
uAmps
1N4448W
REF .020(0.500)
.026(.650)
.018(.450)
.152(3.850)
.140(3.550)
.067(1.700)
.059(1.500)
.110(2.800)
.102(2.600)
.006(.150)
.003(.080)
.049(1.250)
.041(1.050)
.004(.100)
.000(0.00)
.
RECTRON
RATING AND CHARACTERISTICS CURVES ( 1N4448W )
FIG.2 Typical Forward ChatacteristicsFIG.2 Typical Forward Chatacteristics
FIG.4 Reverse Recovery Time vs Forward CurrentFIG.4 Reverse Recovery Time vs.. Forward Current
VF, FORWARD VOLTAGE (mV)
FIG.1 Power Derating Curve
TA, AMBIENT TEMPERATURE (
O
C)
IF, FORWARD CURRENT (mA)
FIG.3 Typical Reverse CharacteristicsFIG.3 Typical Reverse Characteristics
VR, REVERSE VOLTAGE (V)
IF, FORWARD CURRENT (mA)
Pd, POWER DISSIPATION (mW) IR, LEAKAGE CURRENT (A)
trr, REVERSE RECOVERY TIME(nS)
00
100
300
25 50 75 100 125 150
200
10
100
1
0.1
0 1000
800
200 400 600
0.10
1.0
10.0
0.01
0.001 020 40 60 80
0
68
2104
0
0.5
1.0
1.5
2.0
2.5
FIG.5 Total Capacicance vs Reverse VoltageFIG.5 Total Capacicance vs.s.Reverse Voltage
IF, FORWARD CURRENT (mA)
CT, TOTAL CAPCITANCE (pF)
0 4
3
25
16
0
1
2
3
4
Ta=25
O
C
Ta=50
O
C
Ta=85
O
C
Ta=100
O
C
Ta=75
O
C
Ta=50
O
C
Ta=25
O
C
Ta=-30
O
C
f=1 MHz
Ta=0
O
C
Ta=0
O
C
Ta=30
O
C
