lifiers.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL VALUE UNIT
Collector -Base Voltage VCBO 20 V
Collector -Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 2.5 V
Collector Current IC 50 mA
Power Dissipation @ Ta=25 deg C Ptot 200 mW
@ Tc=25 deg C 300 mW
Operating And Storage Junction Tj, Tstg -65 to +200 deg C
Temperature Range
Thermal Resistance
Junction to Case Rth (j-c) 583 deg C/W
Junction to Ambient Rth (j-a) 875 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector Cut off Current ICBO VCB=15V, IE=0 - - 20 nA
Ta=150 deg C
VCB=15V, IE=0 - - 1.0 uA
Collector -Base Voltage VCBO IC=1uA, IE=0 20 - - V
Collector -Emitter Voltage VCEO(sus) IC=3mA, IB=0 12 - - V
Emitter Base Voltage VEBO IE=10uA, IC=0 2.5 - - V
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA, IB=1mA - - 0.40 V
Base Emitter Saturation Voltage VBE(Sat) IC=10mA, IB=1mA - - 1.0 V
DC Current Gain hFE IC=3mA,VCE=1V 25 - 250
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio hfe IC=2mA,VCE=6V,f=1kHz 25 - 300
ft IC=5mA,VCE=6V,f=100MHz 900 - 2000 MHz
Out-Put Capacitance Cob VCB=10V, IE=0, f=1MHz - - 1.0 pF
In-Put Capacitance Cib VEB=0.5V, IC=0, f=1MHz - - 2.0 pF
Collector Base Time Constant rbb' Cb' c IC=2mA,VCE=6V,f=31.9MHz 3.0 - 14 ps
Small-Signal Power Gain Gp IC=5mA,VCE=12V,f=200MHz 15 - - dB
Common Emitter Oscillator Power Po IE= -12mA, VCB=10V, f= 20 - - mW
Output >500MHz
IS / IEC QC 700000
IS / IEC QC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited Data Sheet Page 1 of 2