MOTOROU
SEMICONDUCTOR TECHNICAL DATA Orderthls document
by 2C3501HVID
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2C3501 HV Chip ,:!$,.
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NPN Silicon ~:y:~),i.i;~t,
11111
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Smal14ignal Transistor
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●V(BR)CEO =150 Vdo Min ,{*,[1 I,,,L
‘:$&Uberolal Plu TochnnloglasOperation
.IC =300 mAdc Max :$:~c’..i>:>$t,t,
.hFE= 100 Min@ Ic= 150mAdc at :{ ‘*?
~x.*<y,
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~-,,i, $,
GvCE(sat) =0.4 Vdc Max @IC =150 mAdo \\;:i,,.
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MAXIMUM RATINGS
Rating Symbol Unit
Colleotor+mitter Vobge VCEO v&
Coll*or+see Vokge VCBO $%7$50 ‘‘ Vdo
Emtier~e VoMge VEBO ~“’”~$ 6:0 Vdo
Coll@or Current Ic 1~.:,.,
‘:”b”+’300
-.+,~‘~\\
‘i*:/\.*>~.:,i::>> mAdo
Power Ussi@tion @TA =25°C PD ~+~~,
●1000 mW
Derate above 25°C ,? ,,/::.
,,:t,, 5.71 mWlOC
Storage and Jution TemWrsture Range -65 to +200 ‘c
.,:.,,
ELECTRICAL CHARACTERISTICS r~~~,@Lnlsss ~e noted.] I
$J,~.hf!,.3
Charaotetitic ,+<,+,,,,.
,, .,,.> Symbol
OFF CMRAOTERISTICS ,/:$$’$\$%$
Collaotor-Emtier BrAdown ,V**,$ V(BR)CEO 150 —nAdc
(1C=10 @do) $. ‘~;j
\$
Colleotor+sse Bre*d~~@~ge V(BR)CBO 150 —Vdc
(IC =10 Mdc) ,,$ v~
Emitter+sse Br*bVoltege V(BR)EBO 6.0 —Vdo
(iE = 10 @@~~, ““f+
Coll*or C“@’*Sunent ICBO
~w,~* ~, 50
w@ =Ji$Vdo, TA =150°C) 50 $:
*tihfi Cuwent lEBO —25 nAdo
$
;’aa+,:+EB =4.0 V*)
~#uI$~. pulse WM 250 to 350 ~, Duty Cycle 1.0 to 2.OYO. (oontinu*
Physical
Characteristics:
Die Size —
28x 28 mila
Die Thicbess —
*11 roils
Bond Pad Si=.
Emitter —5.2 q.
Base —5.2 q.
Back Metal
20 ~Gold (Nom)
Top Metal
15 ~Alum. (Nom)
Back Side =Colleotor
●R~ O
9/93 r11
@Motorola,IM. 19W M-ROLA
ELECTRICAL CHARACTERISTICS — contlnu- ~A=25°C unless othemise noted.)
Charaoterlstlc Smbol Min IMex Unit ●
ONCHARACTERISTICS
●
Delta from Pr~urn4n Measured Values Min Max
Delta Coll@or Cutoff Current AlcBO —*100 %of Intial V4ue
orH.O nAdc
whichever is greater
Delta DC Current Gain* Ah~E —*15 %of Initial Value
*Pulsed. Pulse VVidth250 to 350 W, D~ @cle 1.0to 2.OYO. ●
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
WI 69
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2CW01Hv
LfterrttureDietrfbution@ntem
USAMotorokUteratureDatributiomP.O.Box2~12; Phoenix,AtizonaW36.
EUROPEMotorolaLtd.;Eur- LkeratureOentr~66TannersDrive,Bl~elands,MikonKeynes,MK145BP,England.
JAPANNipponMotorolaLtd.;W2-I, NlshffiofandajShinagawa+u,Tokyo141,J-.
ASIAPACIFIC:MotorolaSemloonduaorsH.K.Ltd.;Silhn H~ur Oenter,No.2Da KingStreet,Td PoInduatridEstate,T~ Po,N.T.,HongKong.
@M~ROLA 2W01 HViD
1PHW4101 1-2 PRINED IN USA WW MPWPOD CPTO YOACW llllllllllllllllllllllllllllllllllllllllllllllllll
