140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1007
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
DESCRIPTION: DESCRIPTION:
The MS1007 is a 50V epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device
utilizes emitter ballasting to achieve extreme ruggedness
under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Collector-Base Voltage 110 V
V
Collector-Emitter Voltage 55 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 10 A
PDISS Power Dissipation 233 W
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C)
Thermal Resistance Junction-case
0.75 °°C/W
FeaturesFeatures
• 30 MHz
• 50 VOLTS
• POUT = 150 WATTS
• GP = 14 dB MINIMUM
• COMMON EMITTER CONFIGURATION