MITSUBISHI LASER DIODES ML9XX6 SERIES Notice: Some parametric limits are subject to change. TYPE NAME InGaAsP - MQW - FP LASER DIODES ML920J6S, ML920K6S ML925B6F, ML925C6F DESCRIPTION FEATURES ML9XX6 series are InGaAsP laser diodes which provide a stable, single transverse mode oscillation with emission wavelength of 1550nm and standard continuous light output of 5mW. ML9XX6 are hermetically sealed devices having the photo diode for optical output monitoring. This is suitable for such applications as the light sources for optical communication systems. *1550nm typical emission wavelength, FP-LDs *Low threshold current, low operating current *Wide temperature range operation (-40 to 85C) *5.6mm TO-CA N package Flat window cap : ML920J6S, ML925B6F Ball lens cap : ML920K6S, ML925C6F APPLICATION *Optical communication system ABSOLUTE MAXIMUM RATINGS Symbol Po VRL VRD IFD Tc Tstg Parameter Light output power Laser reverse voltage PD reverse voltage PD forward current Operation temperature Storage temperature Conditions CW - Ratings 6[4] 2 20 2 -40 to +85 -40 to +125 Unit mW V V mA C C ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC) Symbol Parameter Ith Iop Vop c // Threshold current Operation current Operating voltage Slope efficiency Center wavelength Spectral Width Beam divergence angle(parallel) Beam divergence angle (perpendicular) Rise and Fall time (20%-80%) Monitor Current (PD) Dark Current (PD) Capacitance (PD) Fiber coupled power Fiber coupled distance tr,tf Im Id Ct Pf <2> Df <2> Test Conditions CW CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW] CW, Po=5mW[3mW],RMS(-20dB) CW, Po=5mW[3mW] CW, Po=5mW[3mW] Ib=Ith,Po=5mW[3mW],10-90% CW, Po=5mW[3mW], VRD=1V VRD=10V VRD=10V, f=1MHz CW, PL=3mW,SI10/125 CW, PL=3mW,SI10/125 <3> Min. Typ. Max. Unit 3 10 --0.15[0.1] 1520 ----- 10 30 1.1 0.25[0.2] 1550 1.5 25[11] 20 50 1.5 --1580 3 --- mA mA V mW/mA nm nm deg. --- 30[11] --- deg. --0.1 ----[0.2] [4.7] 0.3 0.5 --10 [0.5] [5.8] 0.7 1.0 0.1 20 [---] [6.5] nsec mA A pF mW mm Note : <1> [ ] applied to the lens cap type. Note : <2> Pf, Df are applied to the ball lens type. Note : <3> Df is a distance between reference plane of the base to the fiber. MITSUBISHI ELECTRIC May 2004 MITSUBISHI LASER DIODES ML9XX6 SERIES InGaAsP - MQW - FP LASER DIODES OUTLINE DRAWINGS Dimension : mm ML920J6S +0 5.6 -0.03 4.25 (3) Case ML925B6F (0.25) LD 2-90 (3) (1) (2) PD (4) (0.25) (1) (4) ML920J6S 10.1 1.5Min. (3) 1.0Min. 2.10.15 Case LD 1.27 0.03 (Glass) 0.25 0.03 3.550.1 Emitting Facet Reference Plane (1) (2) 1.2 0.1 (2) PD 18 1 (4) 2.00.25 (P.C.D.) 4-0.450.05 (1) ML925B6F Pin Connection (2) ( Top view ) Dimension : mm +0 ML920K6S 5.6 -0.03 4.25 (3) ML925C6F (0.25) LD (1) (2) (2) PD (4) (0.25) 2-90 (3) (1) Case (4) 10.1 ML920K6S 3.550.1 1.50.005 (3) Case 1.27 0.03 (3.05) 3.9 0.2 Emitting Facet Reference Plane (1) (2) PD 1.2 18 1 0.1 (5.8) LD (4) 2.00.25 (P.C.D.) 4-0.450.05 (1) (2) MITSUBISHI ELECTRIC ML925C6F Pin Connection ( Top view ) May 2004 MITSUBISHI LASER DIODES ML9XX6 S ERIES InGaAsP-MQ W-FP-LASER DIODES TYPICAL CHARACTERISTICS Tc(C) 25 50 75 85 -30 8 Relative intensity (dB) Light output Po (mW) 10 6 4 2 Po=5mW, C W Tc=25C -40 -50 -60 -70 0 0 20 40 60 80 100 Forward current If (mA) -80 1525 1550 1575 Wave le ngth (nm) Fig.1 Light output vs. forward current Fig.2 Spectrum 1.2 Po=5mW Tc=25C Relative light output 1.0 0.8 0.6 0.4 / / 0.2 0.0 -60 -40 -20 0 20 40 60 Angle (deg.) Fig.3 Far field patterns MITSUB ISHI ELECTRIC AUG. '01