MITSUBISHI LASER DIODES
ML9XX6 SERIES
InGaAsP – MQW – FP LASER DIODES
TYPE
NAME ML920J6S, ML920K6S
ML925B6
F
, ML925C6F
DESCRIPTION
ML9XX6 series are InGaAsP laser diodes which provide
a stable, single transverse mode oscillation with emission
wavelength of 1550nm and standard continuous light output
of 5mW.
ML9XX6 are hermetically sealed devices having the photo
diode for optical output monitoring. This is suitable for such
applications as the light sources for optical communication
systems.
FEATURES
•1550nm typical emission wavelength, FP-LDs
•Low threshold current, low operating current
•Wide temperature range operation (-40 to 85ºC)
•φ5.6mm TO-CA N package
Flat window cap : ML920J6S, ML925B6F
Ball lens cap : ML920K6S, ML925C6F
APPLICATION
•Optical communication system
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Light output power CW 6[4] mW
VRL Laser reverse voltage - 2 V
VRD PD reverse voltage - 20 V
IFD PD forward current - 2 mA
Tc Operation temperature -
-40 to +85 ºC
Tstg Storage temperature -
-40 to +125 ºC
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25oC)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ith Threshold current CW 3 10 20 mA
Iop Operation current CW, Po=5mW[3mW] 10 30 50 mA
Vop Operating voltage CW, Po=5mW[3mW] --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW[3mW] 0.15[0.1] 0.25[0.2] --- mW/mA
λc Center wavelength CW, Po=5mW[3mW] 1520 1550 1580 nm
∆λ Spectral Width CW, Po=5mW[3mW],RMS(-20dB) --- 1.5 3 nm
θ// Beam divergence angle(parallel) CW, Po=5mW[3mW] --- 25[11] --- deg.
θ⊥ Beam divergence angle
(perpendicular) CW, Po=5mW[3mW] --- 30[11] --- deg.
tr,tf Rise and Fall time (20%-80%) Ib=Ith,Po=5mW[3mW],10-90% --- 0.3 0.7 nsec
Im Monitor Current (PD) CW, Po=5mW[3mW], VRD=1V 0.1 0.5 1.0 mA
Id Dark Current (PD) VRD=10V --- --- 0.1
µA
Ct Capacitance (PD) VRD=10V, f=1MHz --- 10 20 pF
Pf <2> Fiber coupled power CW, PL=3mW,SI10/125 [0.2] [0.5] [---] mW
Df <2> Fiber coupled distance CW, PL=3mW,SI10/125 <3> [4.7] [5.8] [6.5] mm
Note : <1> [ ] applied to the lens cap type.
Note : <2> Pf, Df are applied to the ball lens type.
Note : <3> Df is a distance between reference plane of the base to the fiber.
MITSUBISHI
ELECTRIC
M
a
y
20
0
4
Notice: Some parametric limits are subject to change.
ML920J6S
ML925B6F
ML920K6S
ML925C6F
MITSUBISHI
ELECTRIC
May 200
4
MITSUBISHI LASER DIODES
ML9XX6 SERIES
InGaAsP – MQW – FP LASER DIODES
OUTLINE DRAWINGS
Dimension : mm
Dimension : mm
(1)
φ1.0Min.
φ1.5Min.
φ3.55±0.1
φ5.6 +0
-0.03
1.27 ±0.03
0.25±0.03
18 ±1 2.1±0.15
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Glass)
(1)
φ1.5±0.005
φ3.55±0.1
φ5.6 +0
-0.03
1.27
18 ±1
3.9 ±0.2
1.2
±0.1
4-φ0.45±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(3.05)
(5.8)
±0.03
Case
(1)
(2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
ML920J6S
ML925B6F
Case
(1)
(2)
(3)
(4)
PD
LD
Case
(1)
(2)
(3)
(4)
PD
LD
Pin Connection
( Top view )
ML920K6S
ML925C6F
Case
(1)
(2)
(3)
(4)
PD
LD
MITS UBI S H I L ASE R D IO DES
ML9XX6 SERIES
In G aAs P-MQW-FP-L AS E R DIO DE S
-80
-70
-60
-50
-40
-30
1525 1550 1575
Wa veleng th (nm )
Relative intensity (dB)
Po=5 mW, CW
Tc=25°C
0
2
4
6
8
10
0 20 40 60 80 100
Forwa rd current If ( mA)
Light output Po (mW)
Tc(°C) 2 5 50 7 5 8 5
T YPI CAL CH ARACT E RI S T I CS
Fi
g
.1 Li
g
ht out
p
ut vs . forward current F i
g
.2 S
p
ectrum
Fi
g
.3 Far field
p
atterns
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-60 -40 -20 0 20 40 60
Angle (deg.)
Relative light output
Po=5mW
Tc=25°C
θ/ /
MITSUBISHI
ELECTRIC
θ⊥
A
UG. ' 0 1
