DATA SH EET
Product specification
Supersedes data of 1996 Oct 21 2003 Aug 05
DISCRETE SEMICONDUCTORS
BLF246
VHF power MOS transistor
M3D060
2003 Aug 05 2
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
FEATURES
•High power gain
•Low noise figure
•Easy power control
•Good thermal stability
•Withstands full load mismatch.
APPLICATIONS
•Large signal amplifier applications in the VHF frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
packagewithaceramiccap.Allleadsareisolatedfromthe
flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
PINNING - SOT121B
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM267
14
32
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 108 28 80 ≥16 ≥55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Aug 05 3
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±20 V
IDDC drain current −13 A
Ptot total power dissipation Tamb ≤25 °C−130 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER VALUE UNIT
Rth j-mb thermal resistance from junction to mounting base 1.35 K/W
Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by RDSon.
(2) Tmb =25°C.
handbook, halfpage
10−1102
1
10
110
(1)
50
ID
(A)
VDS (V)
MRA931
(2)
Fig.3 Power derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
handbook, halfpage
0 50 100 150
200
150
50
0
100
MGG104
Ptot
(W)
Th (°C)
(1)
(2)
2003 Aug 05 4
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID=50mA 65 −−V
I
DSS drain-source leakage current VGS = 0; VDS =28V −−2.5 mA
IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA
V
GSth gate-source threshold voltage ID= 50 mA; VDS =10V 2 −4.5 V
∆VGS gate-source voltage difference of
matched pairs ID= 50 mA; VDS =10V −−100 mV
gfs forward transconductance ID= 2.5 A or 5 A; VDS =10V 3 4.2 −S
R
DSon drain-source on-state resistance ID= 5 A; VGS =10V −0.2 0.3 Ω
IDSX on-state drain current VGS = 10 V; VDS =10V −22 −A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −225 −pF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −180 −pF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −25 −pF
VGS group indicator
GROUP LIMITS
(V) GROUP LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3
2003 Aug 05 5
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
Fig.4 Temperature coefficient of gate-source
voltageasafunctionof draincurrent; typical
values.
VDS = 10 V; valid for Th= 25 to 70 °C.
handbook, halfpage
2
−6
−2
0
−4
MGG105
10−210−1110
T.C.
(mV/K)
ID (A)
Fig.5 Drain current as a function of gate-source
voltage; typical values.
VDS = 10 V; Tj=25°C.
handbook, halfpage
0 5 10 20
40
30
10
0
20
15
MGG106
VGS (V)
ID
(A)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
VGS = 10 V; ID=5A.
handbook, halfpage
050
100
200
0
MBD297
150
T ( C)
o
j
RDSon
(Ω)
300
400
100
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
0
200
400
600
800
010203040
C
(pF)
Cis
Cos
(V)VDS
MRA930
2003 Aug 05 6
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
VGS = 0; f = 1 MHz.
handbook, halfpage
01020 40
300
100
0
200
MGG108
30 VDS (V)
Crs
(pF)
APPLICATION INFORMATION
RF performance in CW operation in a common source test circuit.
Th=25°C; Rth mb-h = 0.2 K/W; RGS =12Ω unless otherwise specified.
Note
1. VGS = 0 (class-C).
Ruggedness in class-B operation
The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the
following conditions: VDS = 28 V; f = 108 MHz; Th=25°C; Rth mb-h = 0.2 K/W at rated output power.
Noise figure
Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID=2A;
f = 108 MHz; RGS =27Ω; Th=25°C; Rth mb-h = 0.2 K/W; F = typ. 3 dB.
MODE OF OPERATION f
(MHz) VDS
(V) ID
(A) PL
(W) Gp
(dB) ηD
(%)
CW, class-B 108 28 0.1 80 >16 >55
CW, class-B 108 28 0.1 80 typ. 18 typ. 65
CW, class-C 108 28 0(1) 80 typ. 15 typ. 72
2003 Aug 05 7
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
Fig.9 Power gain and efficiency as functions of
load power; typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12Ω;
f = 108 MHz; Th=25°C; Rth mb-h = 0.2 K/W.
handbook, halfpage
0 150100
20
0
10
MGG096
50
Gp
(dB)
PL (W)
100
0
50
ηD
(%)
ηD
Gp
Fig.10 Load power as a function of input power;
typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12Ω;
f = 108 MHz; Th=25°C; Rth mb-h = 0.2 K/W.
handbook, halfpage
150
50
50
100
MGG095
053412
P
L
(W)
PIN (W)
Fig.11 Test circuit for class-B operation at 108 MHz.
handbook, full pagewidth
MGG097
C10
C2 C3
C11
R1
C1 L1 L2 L3
C4
R2
L4 L6 L8 C14
R3
L7
L5
C6
C12 C13
C7
C8
C5 C9
VDS
output
50Ω
input
50Ω
VG
DUT
2003 Aug 05 8
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
List of components (see Figs 11 and 12).
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (εr= 4.5),
thickness 1.6 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C4, C5, C8,
C14 multilayer ceramic chip capacitor 100 nF 2222 852 47104
C2, C3, C6, C7 film dielectric trimmer 5 to 60 pF 2222 809 08003
C9 electrolytic capacitor 2.2 µF, 63 V 2222 030 38228
C10 multilayer ceramic chip capacitor;
note 1 68pF+39pF
in parallel
C11 multilayer ceramic chip capacitor;
note 1 69 pF + 100 pF
in parallel
C12 multilayer ceramic chip capacitor;
note 1 2x 100 pF
in parallel
C13 multilayer ceramic chip capacitor;
note 1 62 pF
L1 5 turns enamelled 0.6 mm copper
wire 52 nH length 6.5 mm
int. dia. 3 mm
leads 2 ×10 mm
L2 2 turns enamelled 0.6 mm copper
wire 19 nH length 3.5 mm
int. dia. 3 mm
leads 2 ×7.5 mm
L3, L4 stripline; note 2 31 Ωlength 13 mm
width 6 mm
L5 3 turns enamelled 1.6 mm copper
wire 36 nH length 12 mm
int. dia. 6 mm
leads 2 ×5mm
L6 hairpin of enamelled 1.6 mm
copper wire 14 nH length 20 mm
L7 grade 3B Ferroxcube HF choke 4312 020 36640
L8 3 turns enamelled 1.6 mm copper
wire 52 nH length 8 mm
int. dia. 6 mm
leads 2 ×9mm
R1 metal film resistor 2 ×24 Ωin
parallel, 0.4 W
R2 metal film resistor 100 kΩ, 0.4 W
R3 metal film resistor 10 Ω, 0.4 W
2003 Aug 05 9
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
Fig.12 Component layout for 108 MHz class-B test circuit.
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper
and lower sheets.
handbook, full pagewidth
STRAP RIVET
STRAP
150
70
MGG098
C1 C10
C2
L1 C11
C3
+ VG
L2
R2
R1
C4
L3 L4
C5
L5
L7
R3 C8
C9
L6 C12
C6
L8
C7
C13C14
+VDS
Dimensions in mm.
2003 Aug 05 10
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12Ω;
P
L=80W;T
h=25°C; Rth mb-h = 0.2 K/W.
handbook, halfpage
0 50 100 200
5
0
−10
−15
−5
150
MGG093
f (MHz)
Zi
(Ω)ri
xi
Fig.14 Load impedance as a function of frequency
(series components); typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12Ω;
P
L=80W;T
h=25°C; Rth mb-h = 0.2 K/W.
handbook, halfpage
6
4
0
2
MGG094
0 50 100 200150
ZL
(Ω)
f (MHz)
RL
XL
Fig.15 Power gain as a function of frequency;
typical values.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS =12Ω;
P
L=80W;T
h=25°C; Rth mb-h = 0.2 K/W.
handbook, halfpage
0 50 100 200
40
30
10
0
20
150
MGG092
Gp
(dB)
f (MHz)
2003 Aug 05 11
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
BLF246 scattering parameters
VDS = 28 V; ID= 50 mA; note 1
Note
1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast.
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.83 −91.4 23.64 124.0 0.05 34.6 0.79 −88.1
10 0.75 −125.6 13.95 103.2 0.05 14.4 0.69 −122.2
20 0.73 −147.1 7.17 84.8 0.06 −2.7 0.68 −143.6
30 0.75 −154.3 4.64 73.4 0.05 −12.7 0.70 −150.6
40 0.78 −157.9 3.30 64.6 0.05 −20.1 0.73 −154.2
50 0.80 −160.3 2.48 57.5 0.04 −25.9 0.77 −156.7
60 0.83 −162.2 1.94 51.4 0.04 −30.5 0.80 −158.9
70 0.86 −164.1 1.56 46.1 0.04 −34.1 0.83 −160.8
80 0.88 −165.8 1.27 41.4 0.03 −36.8 0.85 −162.7
90 0.89 −167.3 1.06 37.6 0.03 −38.6 0.87 −164.3
100 0.91 −168.6 0.89 34.2 0.02 −39.6 0.89 −165.9
125 0.93 −171.7 0.62 27.1 0.02 −37.1 0.92 −169.3
150 0.95 −174.2 0.45 22.3 0.01 −20.7 0.94 −172.1
175 0.96 −176.6 0.34 19.3 0.01 24.3 0.95 −174.6
200 0.97 −178.3 0.27 17.4 0.01 62.3 0.96 −176.7
250 0.98 178.3 0.18 16.1 0.02 81.9 0.97 179.7
300 0.98 175.4 0.13 19.5 0.03 85.4 0.98 176.8
350 0.98 172.6 0.10 24.8 0.04 86.0 0.98 174.1
400 0.98 170.3 0.09 33.5 0.05 85.6 0.98 171.6
450 0.98 167.9 0.08 41.5 0.06 85.3 0.98 169.2
500 0.98 165.6 0.08 49.6 0.06 83.9 0.98 166.9
600 0.98 161.1 0.09 61.3 0.08 81.9 0.98 162.5
700 0.98 156.7 0.10 66.5 0.10 79.6 0.98 158.0
800 0.97 152.0 0.12 69.1 0.12 78.2 0.97 153.7
900 0.97 147.0 0.14 69.5 0.13 76.0 0.97 149.3
1000 0.96 142.0 0.16 70.1 0.16 74.3 0.97 144.8
2003 Aug 05 12
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
BLF246 scattering parameters
VDS = 28 V; ID= 100 mA; note 1
Note
1. For more extensive S-parameters see internet:
http://www.semiconductors.philips.com.markets/communications/wirelesscommunicationms/broadcast.
f (MHz) s11 s21 s12 s22
|s11|∠Φ |s21|∠Φ |s12|∠Φ |s22|∠Φ
5 0.81 −113.3 30.83 116.1 0.04 26.8 0.77 −111.3
10 0.77 −142.3 17.04 99.5 0.04 11.1 0.72 −140.7
20 0.76 −158.6 8.64 85.7 0.04 −0.8 0.71 −156.6
30 0.77 −163.5 5.67 77.3 0.04 −7.7 0.72 −161.5
40 0.79 −165.8 4.12 70.5 0.04 −12.7 0.74 −163.3
50 0.80 −167.2 3.18 64.6 0.03 −16.7 0.76 −164.5
60 0.82 −168.2 2.54 59.3 0.03 −19.9 0.78 −165.4
70 0.84 −169.2 2.08 54.5 0.03 −22.4 0.80 −166.3
80 0.85 −170.0 1.74 50.4 0.03 −24.0 0.82 −167.1
90 0.87 −170.9 1.48 46.6 0.02 −24.9 0.84 −168.0
100 0.88 −171.8 1.27 43.0 0.02 −25.1 0.86 −169.0
125 0.90 −173.9 0.90 35.4 0.02 −20.6 0.89 −171.3
150 0.92 −175.9 0.67 29.8 0.01 −5.0 0.91 −173.3
175 0.94 −177.8 0.51 26.0 0.01 24.7 0.93 −175.2
200 0.95 −179.6 0.41 22.7 0.01 52.6 0.94 −177.1
250 0.96 177.3 0.27 18.6 0.02 76.2 0.96 179.7
300 0.97 174.4 0.20 17.8 0.03 82.2 0.97 176.9
350 0.97 171.7 0.15 19.4 0.03 84.2 0.97 174.3
400 0.97 169.2 0.13 23.4 0.04 84.3 0.98 171.9
450 0.97 166.7 0.11 28.4 0.05 84.6 0.98 169.6
500 0.97 164.3 0.10 34.9 0.06 83.3 0.98 167.4
600 0.97 159.5 0.09 46.8 0.07 81.6 0.98 163.1
700 0.96 154.5 0.10 55.1 0.09 79.5 0.98 158.8
800 0.96 149.3 0.11 61.0 0.10 78.8 0.98 154.5
900 0.95 143.6 0.12 63.0 0.11 76.3 0.97 150.0
1000 0.92 136.3 0.12 67.1 0.12 78.0 0.97 145.2
2003 Aug 05 13
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT121B 99-03-29
0 5 10 mm
scale
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B
12
43
U
3
D
1
U
2
H
H
b
Q
D
U
1
q
A
F
c
p
w
1
MMM
MM
w
2
B
C
C
A
AB
α
0.25
UNIT A
mm
Db
5.82
5.56 0.16
0.10 12.86
12.59 12.83
12.57 28.45
25.52 3.30
3.05 6.48
6.22
7.27
6.17
cD1U3
U2
12.32
12.06 0.51
w1w2
45°
αU1
24.90
24.63
Q
4.45
3.91
q
18.42
F
2.67
2.41
0.01
inches 0.229
0.219 0.006
0.004 0.506
0.496 0.505
0.495 1.120
1.005 0.130
0.120 0.255
0.245
0.286
0.243 0.485
0.475 0.02
0.98
0.97
0.175
0.154 0.725
0.105
0.095
pH
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2003 Aug 05 14
Philips Semiconductors Product specification
VHF power MOS transistor BLF246
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditionsabove those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2003 SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Aug 05 Document order number: 9397 750 11597
