SD101AWS thru SD101CWS Vishay Semiconductors New Product formerly General Semiconductor Schottky Diodes SOD-323 .012 (0.3) .065 (1.65) .076 (1.95) .100 (2.55) .112 (2.85) Cathode Band Mounting Pad Layout Top View 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) .006 (0.15) max. .004 (0.1) max. .059 (1.5) .043 (1.1) .049 (1.25) max. Dimensions in inches and (millimeters) .010 (0.25) min. Features * For general purpose applications. * The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. * This diode is also available in the MiniMELF case with the type designations LL101A to LL101C, the DO-35 case with the type designations SD101A to SD101C and the SOD-123 case with type designations SD101AW to SD101CW. Mechanical Data Case: SOD-323 plastic case Weight: approximately 0.004g Marking SD101AWS = SA Code: SD101BWS = SB SD101CWS = SC Packaging codes/options: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box Maximum Ratings and Thermal Characteristics (T C Parameter = 25C unless otherwise noted) Symbol Value Unit VRRM 60 50 40 V Power Dissipation (Infinite Heat Sink) Ptot 150(1) mW Maximum Single Cycle Surge 10s Square Wave IFSM 2 A Peak Inverse Voltage SD101AWS SD101BWS SD101CWS Thermal Resistance Junction to Ambient Air RJA Junction Temperature Tj Storage Temperature Range TS (1) C/W (1) C 650 125 -65 to +150 C Note: (1) Valid provided that electrodes are kept at ambient temperature Document Number 88243 13-May-02 www.vishay.com 1 SD101AWS thru SD101CWS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter J = 25C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Reverse Breakdown Voltage SD101AWS SD101BWS SD101CWS V(BR)R IR = 10A 60 50 40 -- -- -- -- -- -- V Leakage Current SD101AWS SD101BWS SD101CWS IR VR = 50V VR = 40V VR = 30V -- -- -- -- -- -- 200 200 200 nA IF = 1mA -- -- -- -- -- -- 0.41 0.40 0.39 IF = 15mA -- -- -- -- -- -- 1.0 0.95 0.90 Ctot VR = 0V f = 1MHz -- -- -- -- -- -- 2.0 2.1 2.2 pF trr IF = IR = 5mA, recover to 0.1IR -- -- 1 ns Forward Voltage Drop SD101AWS SD101BWS SD101CWS VF SD101AWS SD101BWS SD101CWS Junction Capacitance Reverse Recovery Time www.vishay.com 2 SD101AWS SD101BWS SD101CWS V Document Number 88243 13-May-02 SD101AWS thru SD101CWS Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Document Number 88243 13-May-02 www.vishay.com 3