SD101AWS thru SD101CWS
Vishay Semiconductors
for merly General Semiconductor
Document Number 88243 www.vishay.com
13-May-02 1
New Product
Schottky Diodes
Features
• For general pur pose applications.
• The SD101 ser ies is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications.
• This diode is also available in the MiniMELF case
with the type designations LL101A to LL101C,
the DO-35 case with the type designations
SD101A to SD101C and the SOD-123 case with
type designations SD101AW to SD101CW.
Maximum Ratings and Thermal Characteristics(TC= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Peak Inverse Voltage SD101AWS 60
SD101BWS VRRM 50 V
SD101CWS 40
Power Dissipation (Infinite Heat Sink) Ptot 150(1) mW
Maximum Single Cycle Surge 10µs Square Wave IFSM 2A
Thermal Resistance Junction to Ambient Air RΘJA 650(1) °C/W
Junction Temperature Tj125(1) °C
Storage Temperature Range TS–65 to +150 °C
Note:
(1) Valid provided that electrodes are kept at ambient temperature
Mechanical Data
Case: SOD-323 plastic case
Weight: approximately 0.004g
Marking SD101AWS = SA
Code: SD101BWS = SB
SD101CWS = SC
Packaging codes/options:
D5/10K per 13”reel (8mm tape), 30K/box
D6/3K per 7”reel (8mm tape), 30K/box
.006 (0.15)
max.
.010 (0.25)
min.
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
.004 (0.1)
max.
.049 (1.25)
max.
Cathode Band
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
0.055
(1.40) 0.062
(1.60)
0.047 (1.20)
Mounting Pad Layout
SOD-323
Dimensions in inches
and (millimeters)
SD101AWS thru SD101CWS
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88243
213-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
SD101AWS 60 ——
Reverse Breakdown Voltage SD101BWS V(BR)R IR = 10µA50——V
SD101CWS 40 ——
SD101AWS VR= 50V ——200
Leakage Current SD101BWS IRVR = 40V ——200 nA
SD101CWS VR = 30V ——200
SD101AWS ——0.41
SD101BWS IF = 1mA ——0.40
F orward Voltage Drop SD101CWS VF——0.39 V
SD101AWS ——1.0
SD101BWS IF= 15mA ——0.95
SD101CWS ——0.90
SD101AWS VR= 0V ——2.0
Junction Capacitance SD101BWS Ctot f = 1MHz ——2.1 pF
SD101CWS ——2.2
Reverse Recover y Time trr IF= IR = 5mA, —— 1ns
recover to 0.1IR
SD101AWS thru SD101CWS
Vishay Semiconductors
for merly General Semiconductor
Document Number 88243 www.vishay.com
13-May-02 3
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
