10 MHz, 20 V/μs, G = 1, 10, 100, 1000 i CMOS®
Programmable Gain Instrumentation Amplifier
Preliminary Technical Data AD8253
Rev. prA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2007 Analog Devices, Inc. All rights reserved.
FEATURES
Small package: 10-lead MSOP
Programmable gains: 1, 10, 100, 1000
Digital or pin-programmable gain setting
Wide supply: ±5 V to ±15 V
Excellent dc performance
High CMRR 120 dB , G = 100
Low gain drift: 10 ppm/°C
Low offset drift: 1.2 V/°C , G = 1000
Excellent ac performance
Fast settling time: 615 ns to 0.001%
High slew rate: 20 V/µs
Low distortion:
High CMRR over frequency: 80 dB to 50 kHz
Low noise: 8 nV/√Hz, G = 1000
Low power: 4 mA
APPLICATIONS
Data acquisition
Biomedical analysis
Test and measurement
GENERAL DESCRIPTION
The AD8253 is an instrumentation amplifier with digitally
programmable gains that has GΩ input impedance, low output
noise, and low distortion making it suitable for interfacing with
sensors and driving high sample rate analog-to-digital converters
(ADCs). It has high bandwidth of 10 MHz, low THD and fast
settling time of 615 ns to 0.001%. Offset drift and gain drift are
specified to 1.2 μV/°C and 10 ppm/°C, respectively for G = 1000.
In addition to its wide input common voltage range, it boasts a
high common-mode rejection of 80 dB at G = 1 from dc to
50 kHz. The combination of precision dc performance coupled
with high speed capabilities make the AD8253 an excellent
candidate for data acquisition. Furthermore, this monolithic
solution simplifies design and manufacturing, and boosts
performance of instrumentation by maintaining a tight match
of internal resistors and amplifiers.
The AD8253 user interface consists of a parallel port that allows
users to set the gain in one of two different ways (see Figure 1
for the functional block diagram). A 2-bit word sent via a bus
can be latched using the WR input. An alternative is to use
transparent gain mode where the state of logic levels at the gain
port determines the gain.
FUNCTIONAL BLOCK DIAGRAM
A1 A0
DGD WR
Logic
AD8253
OUT
+VS -VS REF
+IN
-IN
Figure 1.
Table 1. Instrumentation and Difference Amplifiers by
Category
High
Performance
Low
Cost
High
Voltage
Mil
Grade
Low
Power
Digital
Gain
AD82201 AD6231 AD628 AD620
AD6271 AD82311
AD8221 AD85531 AD629 AD621 AD8250
AD8222 AD524 AD8251
AD82241 AD526 AD85551
AD624 AD85561
AD85571
1 Rail-to-rail output.
The AD8253 is available in a 10-lead MSOP package and is
specified over the −40°C to +85°C temperature range, making it
an excellent solution for applications where size and packing
density are important considerations.
AD8253 Preliminary Technical Data
Rev. prA | Page 2 of 10
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Timing Diagram ........................................................................... 5
Absolute Maximum Ratings............................................................ 6
Maximum Power Dissipation......................................................6
ESD Caution...................................................................................6
Pin Configuration and Function Descriptions..............................7
Theory of Operation .........................................................................8
Gain Selection................................................................................8
Outline Dimensions ....................................................................... 10
Ordering Guide .......................................................................... 10
REVISION HISTORY
4/07—Revision 0: Initial Version
Preliminary Technical Data AD8253
Rev. prA | Page 3 of 10
SPECIFICATIONS
+VS = +15 V, −VS = −15 V, VREF = 0 V @ TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
COMMON-MODE REJECTION RATIO (CMRR)
CMRR to 60 Hz with 1 kΩ Source Imbalance +IN = −IN = −10 V to +10 V
G = 1 80 dB
G = 10 100 dB
G = 100 120 dB
G = 1000 120 dB
CMRR to 50 kHz +IN = −IN = −10 V to +10 V
G = 1 80 dB
G = 10 dB
G = 100 dB
G = 1000 dB
NOISE
Voltage Noise, 1 kHz, RTI
G = 1 40 nV/√Hz
G = 10 9 nV/√Hz
G = 100 8 nV/√Hz
G = 1000 8 nV/√Hz
0.1 Hz to 10 Hz, RTI
G = 1 2.5 μV p-p
G = 10 2.5 μV p-p
G = 100 μV p-p
G = 1000 μV p-p
Current Noise, 1 kHz 5 pA/√Hz
Current Noise, 0.1 Hz to 10 Hz 60 pA p-p
VOLTAGE OFFSET
Offset RTI VOS G = 1, 10, 100, 1000 ±200 + 600/G μV
Over Temperature T = −40°C to +85°C ±260 + 900/G μV
Average TC T = −40°C to +85°C ±1.2 + 5/G μV/°C
Offset Referred to the Input vs. Supply (PSR) VS = ±5 V to ±15 V ±6 + 20/G μV/V
INPUT CURRENT
Input Bias Current 5 30 nA
Over Temperature T = −40°C to +85°C 40 nA
Average TC 400 pA/°C
Input Offset Current 5 30 nA
Over Temperature T = −40°C to +85°C 30 nA
Average TC 160 pA/°C
DYNAMIC RESPONSE
Small Signal −3 dB Bandwidth
G = 1 10 MHz
G = 10 6 MHz
G = 100 3 MHz
G = 1000 0.3 MHz
Settling Time 0.01% ΔOUT = 10 V step
G = 1 585 ns
G = 10 648 ns
G = 100 ns
G = 1000 ns
AD8253 Preliminary Technical Data
Rev. prA | Page 4 of 10
Parameter Conditions Min Typ Max Unit
Settling Time 0.001% ΔOUT = 10 V step
G = 1 615 ns
G = 10 685 ns
G = 100 ns
G = 1000 ns
Slew Rate
G = 1 20 V/μs
G = 10 25 V/μs
G = 100 25 V/μs
G = 1000 25 V/μs
Total Harmonic Distortion f = 1 kHz, RL = 10 kΩ, G = 1 dB
GAIN
Gain Range G = 1, 10, 100, 1000 1 1000 V/V
Gain Error OUT = ±10 V
G = 1 0.03 %
G = 10 0.04 %
G = 100 %
G = 1000 %
Gain Nonlinearity OUT = −10 V to +10 V
G = 1 RL = 10 kΩ, 2 kΩ, 600 Ω 6 ppm
G = 10 RL = 10 kΩ, 2 kΩ, 600 Ω 10 ppm
G = 100 RL = 10 kΩ, 2 kΩ, 600 Ω ppm
G = 1000 RL = 10 kΩ, 2 kΩ, 600 Ω ppm
Gain vs. Temperature All gains 10 ppm/°C
INPUT
Input Impedance
Differential 1
||pF
Common Mode 1 ||pF
Input Operating Voltage Range VS = ±5 V to ±15 V −VS + 1.0 +VS − 1.1 V
Over Temperature T = −40°C to +85°C −VS + 1.1 +VS − 1.4 V
OUTPUT
Output Swing −13.5 +13.5 V
Over Temperature T = −40°C to +85°C −13.5 +13.5 V
Short-Circuit Current 37 mA
REFERENCE INPUT
RIN 20
IIN +IN, −IN, REF = 0 1 μA
Voltage Range −VS +VS V
Gain to Output 1 ± 0.0001 V/V
DIGITAL LOGIC
Digital Ground Voltage, DGND Referred to GND −VS + 4.25 0 +VS − 2.7 V
Digital Input Voltage Low Referred to GND DGND 2.1 V
Digital Input Voltage High Referred to GND 2.8 +VS V
Digital Input Current 1 μA
Gain Switching Time1 325 ns
tSU See Figure 2 timing diagram 20 ns
tHD 10 ns
tWR -LOW 20 ns
tWR -HIGH 40 ns
Preliminary Technical Data AD8253
Rev. prA | Page 5 of 10
Parameter Conditions Min Typ Max Unit
POWER SUPPLY
Operating Range ±5 ±15 V
Quiescent Current, +IS 4.1 4.5 mA
Quiescent Current, −IS 3.7 4.5 mA
Over Temperature T = −40°C to +85°C 4.5 mA
TEMPERATURE RANGE
Specified Performance −40 +85 °C
1 Add time for the output to slew and settle to calculate the total time for a gain change.
TIMING DIAGRAM
A0, A1
WR
t
SU
t
HD
t
WR-HIGH
t
WR-LOW
0
6287-003
Figure 2. Timing Diagram for Latched Gain Mode (See the Timing for Latched Gain Mode Section)
AD8253 Preliminary Technical Data
Rev. prA | Page 6 of 10
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage ±17 V
Power Dissipation See Figure 3
Output Short-Circuit Current Indefinite1
Common-Mode Input Voltage ±VS
Differential Input Voltage ±VS
Digital Logic Inputs ±VS
Storage Temperature Range –65°C to +125°C
Operating Temperature Range2 –40°C to +85°C
Lead Temperature (Soldering 10 sec) 300°C
Junction Temperature 140°C
θJA (4-Layer JEDEC Standard Board) 112°C/W
Package Glass Transition Temperature 140°C
1 Assumes the load is referenced to mid supply.
2 Temperature for specified performance is −40°C to +85°C. For performance
to +125°C, see the Error! Reference source not found. section.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8253 package is
limited by the associated rise in junction temperature (TJ) on
the die. The plastic encapsulating the die locally reaches the
junction temperature. At approximately 140°C, which is the
glass transition temperature, the plastic changes its properties.
Even temporarily exceeding this temperature limit may change
the stresses that the package exerts on the die, permanently
shifting the parametric performance of the AD8253. Exceeding
a junction temperature of 140°C for an extended period can
result in changes in silicon devices, potentially causing failure.
The still-air thermal properties of the package and PCB (θJA),
the ambient temperature (TA), and the total power dissipated in
the package (PD) determine the junction temperature of the die.
The junction temperature is calculated as
(
)
JA
D
A
JPTT θ×+=
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, the total drive power is VS/2 × IOUT, some of which is
dissipated in the package and some in the load (VOUT × IOUT).
The difference between the total drive power and the load
power is the drive power dissipated in the package.
PD = Quiescent Power + (Total Drive PowerLoad Power)
()
L
OUT
L
OUTS
SS
DR
V
R
V
V
IVP
2
2
×+×=
In single-supply operation with RL referenced to −VS, worst case
is VOUT = VS/2.
Airflow increases heat dissipation, effectively reducing θJA. In
addition, more metal directly in contact with the package leads
from metal traces, through holes, ground, and power planes
reduces the θJA.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature on a 4-layer JEDEC
standard board.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–40 –20 120100806040200
MAXIMUM POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
06287-004
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
Preliminary Technical Data AD8253
Rev. prA | Page 7 of 10
PIN CONFIGURATION AND FUNCTION
DESCRIPTIONS
NC = NO CONNECT
AD8253
TOP VIEW
(Not to Scale)
-IN
1
DGND
2
-VS
3
A0
4
A1
5
+IN
VREF
+VS
VOUT
WR
10
9
8
7
6
Figure 4. 10-Lead MSOP (RM-10) Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Name Description
1 −IN
Inverting Input Terminal. True
differential input.
2 DGND Digital Ground.
3 −VS Negative Supply Terminal.
4 A0 Gain Setting Pin (LSB).
5 A1 Gain Setting Pin (MSB).
6 WR Write Enable.
7 OUT Output Terminal.
8 +VS Positive Supply Terminal.
9 REF Reference Voltage Terminal.
10 +IN
Noninverting Input Terminal. True
differential input.
AD8253 Preliminary Technical Data
Rev. prA | Page 8 of 10
THEORY OF OPERATION
10k
10k10k
10k
REF
OUTPUT
A3
IN
+IN
WR
2.2k
2.2k
+
V
S
+
V
S
–V
S
–V
S
+V
S
–V
S
+V
S
–V
S
A1A0
2.2k
DGND
A1
A2
DIGITAL
GAIN
CONTROL
2.2k
+V
S
–V
S
+V
S
–V
S
+V
S
–V
S
+V
S
–V
S
0
6287-050
Figure 5. Simplified Schematic
The AD8253 is a monolithic instrumentation amplifier based
on the classic, three op amp topology as shown in Figure 5.
It is fabricated on the Analog Devices, Inc. proprietary iCMOS
process that provides precision, linear performance ,and a robust
digital interface. A parallel interface allows users to digitally
program gains of 1, 10, 100, and 1000. Gain control is achieved
by switching resistors in an internal, precision, resistor array (as
shown in Figure 5). Although the AD8253 has a voltage feed-
back topology, gain bandwidth product increases for gains of 1,
10, and 100 because each gain has its own frequency
compensation. This results in maximum bandwidth at higher
gains.
All internal amplifiers employ distortion cancellation circuitry
and achieve high linearity and ultralow THD. Laser trimmed
resistors allow for a maximum gain error of less than 0.03% for
G = 1, and minimum CMRR of 120 dB for G = 1000. A pinout
optimized for high CMRR over frequency enables the AD8253
to offer CMRR over frequency of 80 dB at 50 kHz (G = 1). The
balanced input reduces the parasitics that, in the past, had
adversely affected CMRR performance.
GAIN SELECTION
This section shows users how to configure the AD8253 for basic
operation. Logic low and Logic high voltage limits are listed in
the Specifications section. Typically, logic low is 0 V and
logic high is 5 V; both voltages are measured with respect
to DGND. Refer to the specifications table (Table 2) for
the permissible voltage range of DGND. The gain of the
AD8253 can be set using two methods.
Transparent Gain Mode
The easiest way to set the gain is to program it directly via a
logic high or logic low voltage applied to A0 and A1. Figure 6
shows an example of this gain setting method, referred to through-
out the data sheet as transparent gain mode. Tie WR to the
negative supply to engage transparent gain mode. In this mode,
any change in voltage applied to A0 and A1 from logic low to
logic high, or vice versa, immediately results in a gain change.
Table 5 is the truth table for transparent gain mode and Figure 6
shows the AD8253 configured in transparent gain mode.
Figure 6. Transparent Gain Mode, A0 and A1 = High, G = 1000
Preliminary Technical Data AD8253
Rev. prA | Page 9 of 10
Table 5. Truth Table Logic Levels for Transparent Gain Mode
WR A1 A0 Gain
−VS Low Low 1
−VS Low High 10
−VS High Low 100
−VS High High 1000
Latched Gain Mode
Some applications have multiple programmable devices such as
multiplexers or other programmable gain instrumentation
amplifiers on the same PCB. In such cases, devices can share a
data bus. The gain of the AD8253 can be set using WR as a latch,
allowing other devices to share A0 and A1. Figure 7 shows a
schematic using this method, known as latched gain mode. The
AD8253 is in this mode when WR is held at logic high or logic
low, typically 5 V and 0 V, respectively. The voltages on A0 and
A1 are read on the downward edge of the WR signal as it
transitions from logic high to logic low. This latches in the logic
levels on A0 and A1, resulting in a gain change. See the truth
table listing in Table 6 for more on these gain changes.
Figure 7. Latched Gain Mode, G = 1000
Table 6. Truth Table Logic Levels for Latched Gain Mode
WR A1 A0 Gain
High to Low Low Low Change to 1
High to Low Low High Change to 10
High to Low High Low Change to 100
High to Low High High Change to 1000
Low to Low X1 X
1 No Change
Low to High X1 X
1 No Change
High to High X1 X
1 No Change
1 X = don’t care.
Upon power-up, the AD8253 defaults to a gain of 1 when in
latched gain mode. In contrast, if the AD8253 is configured in
transparent gain mode, it starts at the gain indicated by the
voltage levels on A0 and A1 upon power-up.
Timing for Latched Gain Mode
In latched gain mode, logic levels at A0 and A1 have to be held
for a minimum setup time, tSU, before the downward edge of
WR latches in the gain. Similarly, they must be held for a
minimum hold time of tHD after the downward edge of WR to
ensure that the gain is latched in correctly. After tHD, A0 and A1
may change logic levels but the gain does not change (until the
next downward edge of WR). The minimum duration that WR
can be held high is t WR-HIGH, and t WR-LOW is the minimum
duration that WR can be held low. Digital timing specifications
are listed in Table 2. The time required for a gain change is
dominated by the settling time of the amplifier. A timing
diagram is shown in Figure 8.
When sharing a data bus with other devices, logic levels applied
to those devices can potentially feed through to the output of
the AD8253. Feedthrough can be minimized by decreasing the
edge rate of the logic signals. Furthermore, careful layout of the
PCB also reduces coupling between the digital and analog
portions of the board.
A0, A1
WR
t
SU
t
HD
t
WR-HIGH
t
WR-LOW
0
6287-053
Figure 8. Timing Diagram for Latched Gain Mode
AD8253 Preliminary Technical Data
Rev. PrA | Page 10 of 10 PR06983-0-9/07(PrA)
OUTLINE DIMENSIONS
COMPLIANT TO JEDEC STANDARDS MO-187-BA
0.23
0.08
0.80
0.60
0.40
0.15
0.05
0.33
0.17
0.95
0.85
0.75
SEATING
PLANE
1.10 MAX
10 6
5
1
0.50 BSC
PIN 1
COPLANARITY
0.10
3.10
3.00
2.90
3.10
3.00
2.90
5.15
4.90
4.65
Figure 9. 10-Lead Mini Small Outline Package [MSOP]
(RM-10)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option Branding
AD8253ARMZ1 –40°C to +85°C 10-Lead MSOP RM-10 Y0K
AD8253ARMZ-RL1 –40°C to +85°C 10-Lead MSOP RM-10 Y0K
AD8253ARMZ-R71 –40°C to +85°C 10-Lead MSOP RM-10 Y0K
AD8253-EVALZ1 Evaluation Board
1 Z = RoHS compliant part.