MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
Ma
gnaChip Semi
conductor Ltd
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
650
V
R
DS(on),max
0.
19
Ω
V
TH
,typ
3
V
I
D
20
A
Q
g,typ
51
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MM
P60R
190P
TH
60R190P
-55 ~ 150
℃
TO
-
220
T
ube
Halogen Free
MMP
60R
190P
600V 0.
19
Ω
N-channel MOSFET
Description
MMP60R
190P
is power MOSFET
using magnachip
’
s advan
ced super junction te
chnology that ca
n
realize v
ery low on-resistance and gate
charge. It wi
ll provide much high ef
f
iciency
by using
optimized char
ge coupling technolo
gy
. These user
friendly devices giv
e an advantage of Low
EMI to
designers as w
ell as low sw
itching loss.
Features
Low Pow
er Loss by High Speed Sw
itching and Low
On
-Resistance
100%
Av
alanche
T
ested
Green Packa
ge
–
Pb Free Plating, Halo
gen Free
Key Parameters
Ordering Informatio
n
Applications
PFC Pow
er Supply Stages
Switching
Applications
Adapter
Motor Control
DC
–
DC Converters
D
G
G
D
S
S
Package & Internal
Circui
t
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
Ma
gnaChip Semi
conductor Ltd
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
600
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
I
D
20
A
T
C
=25
℃
12.7
A
T
C
=100
℃
Pulsed drain cu
rrent
(1)
I
DM
60
A
Power dissi
pation
P
D
154
W
Single - pulse aval
anche energy
E
AS
420
mJ
MOSFE
T dv/dt ruggedne
ss
dv/dt
50
V/ns
Diode dv
/dt
ruggedne
ss
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
℃
Maximum operatin
g junction
temperature
T
j
150
℃
1)
Pulse width t
P
limited by T
j,m
ax
2)
I
SD
≤
I
D
, V
DS peak
≤
V
(BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistance,
junction-case max
R
thjc
0.81
℃
/W
Thermal resistanc
e, junction-ambient max
R
thja
62.5
℃
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=25
℃
unless oth
erwise specified)
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
600
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
oltage
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.17
0.19
Ω
V
GS
= 10V
, I
D
=
9.5
A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
1630
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0M
Hz
Output Capacitance
C
oss
-
1250
-
Reverse
T
r
ans
fer Capacitance
C
rss
-
74
-
Effectiv
e Output Capacit
ance
Energy Related
(3)
C
o(er)
-
39
-
V
DS
= 0V to 480V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On Del
ay
Time
t
d(on)
-
32
-
ns
V
GS
= 10V
,
R
G
= 25
Ω,
V
DS
= 300V
, I
D
=
20
A
Rise
Ti
me
t
r
-
73
-
T
urn Of
f Delay
Time
t
d(off)
-
146
-
Fall
T
ime
t
f
-
47
-
T
otal Gate Char
ge
Q
g
-
51
-
nC
V
GS
= 10V
,
V
DS
= 480V
,
I
D
=
20
A
Gate
–
Source Cha
rge
Q
gs
-
12
-
Gate
–
Drain Char
ge
Q
gd
-
19
-
Gate Resistance
R
G
-
3.0
-
Ω
V
GS
= 0V
,
f = 1.0M
Hz
3) C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is
rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
℃
unless
otherwise specified)
Dynamic Characteri
stics (T
c
=25
℃
unle
ss otherwise specif
ied)
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
20
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
=
20
A, VGS = 0 V
Reverse Recov
ery Time
t
rr
-
483
-
ns
I
SD
=
20
A
di/dt = 100 A/μs
V
DD
= 100 V
Reverse Recov
ery Charge
Q
rr
-
7.6
-
μ
C
Reverse Recov
ery Current
I
rrm
-
31.5
-
A
Reverse Diode Ch
aracteristics (T
c
=25
℃
unless otherwise specified)
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
5
Characteristic Gra
ph
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
6
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
7
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
8
T
est Circuit
V
DS
10V
1mA
DUT
100K
Ω
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K
Ω
V
gs
±
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on)
t
r
t
on
T
d(off)
t
f
t
off
V
DD
t
p
t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit
Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit
Fig18-2. Unclamped inductive waveform
R
g
25
Ω
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
9
Physical Dimension
3 Leads
,
TO
-220
Dimensions are in mil
limeters unless
otherwise specified
MM
P
60
R
190
P
Datasheet
Jun.
2013
Revision 1.1
MagnaChip Se
miconductor Ltd
.
10
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
including,
without
limitation,
aircraft,
nuclear
power
generation,
medical
appliances,
and
devices
or
systems
in
which
malfunction
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
injury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaC
hip
reserve
s
the right
to change
the specifications and
circuitry without notice
at any
time. MagnaChip does
not consid
er
responsibili
ty
for
use
of
any
circuitry
other
than
circuitry
entirely
included
in
a
MagnaChip
product.
is
a
registered
trademark
of
MagnaCh
ip
Semiconductor
Ltd.
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