IGBT MODULE Spec.No.IGBT-SP-02005 R8 P1/6 MBN1200E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>30,000cycles) Isolated head sink (terminal to base). Unit in mm Weight : 1300(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Unit Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m MBN1200E33D V V 3,300 20 1,200 A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -40 ~ +125 VRMS 6,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time Symbol Unit Min. Typ. Max. 20 4.2 6.0 110 1.2 1.9 2.4 1.0 3.0 2.5 12 60 +500 5.2 7.0 3.1 3.3 2.5 5.1 3.0 0.6 1.1 I CES mA IGES VCE(sat) VGE(TO) Cies Rge tr ton tf toff VFM nA V V nF V -500 4.5 - trr s - s Test Conditions Turn On Loss Eon(10%) J/P 1.6 2.1 Turn Off Loss Eoff(10%) J/P 1.3 1.7 Reverse Recovery Loss Err(10%) J/P 1.2 1.9 Stray inductance module LSCE nH 12 IGBT Rth(j-c) 0.0085 Thermal Impedance K/W Junction to case FWD Rth(j-c) 0.017 Contact Thermal Impedance Rth(c-f) K/W 0.006 Case to fin Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ o VCE=3,300V, VGE=0V, Tj=25 C o VCE=3,300V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=1,200A, VGE=15V, Tj=125 C o VCE=10V, IC=1,200mA, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=1,650V, Ic=1,200A L=100nH RG=3.3 (3) o VGE=15V, Tj=125 C o IF=1,200A, VGE=0V, Tj=125 C Vcc=1,650V, IF=1,200A, L=100nH o Tj=125 C VCC=1,650V, Ic=1,200A, L=100nH RG=3.3 (3) o VGE=15V, Tj=125 C IGBT MODULE Spec.No.IGBT-SP-02005 R8 P2/6 MBN1200E33D CHARACTERISTICS CURVE STATIC CHARACTERISTICS T Y P IC A L 2000 Tc = 2 5 TY PIC AL 2000 Tc=125 V G E = 15 V 13V 11V V G E= 15V 13V 11V 1500 Collector Curent , Ic (A) Collector Curent , Ic (A) 1500 1000 500 1000 500 0 0 0 2 4 6 8 10 C o lle cto r to E m itter V o lta g e, V C E (V ) T Y P IC A L 2000 1500 Tc= 25 Tc= 125 1000 500 0 0 1 2 3 0 2 4 6 8 10 Collector to Emitter Voltage, VCE(V) C o llecto r C u rren t v s .C o llecto r to E m itter V o lta ge Forward Curent , IF (A) 4 5 F o r w a r d V o lta g e , V F (V ) F o r w a r d V o l ta g e o f fr e e -w h e e l i n g d i o d e http://store.iiic.cc/ C ollector C urrent vs.C ollector to Em itter Voltage IGBT MODULE Spec.No.IGBT-SP-02005 R8 P3/6 MBN1200E33D DEPENDENCE OF CURRENT 2.0 TYPICAL Conditions TYPICAL 2.0 VGE=15VRg(on)=3.3 Vcc=1650VL100nHTj=125 Inductive load Conditions VGE=15VRg(off)=3.3 Vcc=1650VL100nHTj=125 Inductive load Eon(Full) IC 10% t 90% tf tof f t5 t7 t8 t6 t4 t2 VCE dt Eon(full)= IC VCE dt Eon(10%)= V GE 0 1.5 tr ton t1t3 t4 Turn-off Loss , Eoff (J/pulse) Turn-on Loss , Eon (J/pulse) 0 V GE 10% 0 10% 10% 10% 0 90% Eon(10%) 90% 1.5 V CE IC V CE IC t3 t2 t1 1.0 t8 Eoff(10%)= Eoff(full)= IC t7 t6 IC t5 VCE dt Eoff(10%) VCE dt 1.0 0.5 0.5 0.0 0 500 1000 1500 0.0 Collector Current , Ic (A) 0 Turn-on Loss vs. Collector Current TYPICAL 4.0 Conditions VGE=15VRg(on)=3.3 Vcc=1650VL100nHTj=125 Inductive load Conditions VGE=15VRg(on/off)=3.3 Vcc=1650VL100nHTj=125 Inductive load 3.5 0.1V CE 2.0 V CE 0.5IRM 0.1IF IRM 0 1500 Turn-off Loss vs. Collector Current TYPICAL 2.5 500 1000 Collector Current , Ic (A) t trr Err(10%)= Err(full)= 1.5 t11 IF CE dt F CE dt t11 t10 t9 t10 V I V t12 toff 3.0 t12 t9 Err(Full) Err(10%) 1.0 Switching time , ton , tr , toff , tf , trr (us) Reverse Recovery Loss , Err (J/pulse) IF -IC 2.5 ton 2.0 tr 1.5 tf 1.0 0.5 trr 0.5 0.0 0.0 0 500 1000 1500 Forward Current , IF (A) Recovery Loss vs. Forward Current http://store.iiic.cc/ 0 500 1000 Collector Current , Ic (A) Switching time vs. Collector current 1500 IGBT MODULE P4/6 Spec.No.IGBT-SP-02005 R8 MBN1200E33D DEPENDENCE OF RG TYPICAL 4.0 TYPICAL 2.0 1.5 3.0 Turn-off Loss , Eoff (J/pulse) Turn-on Loss , Eon (J/pulse) Eoff(full) 2.0 Eon(full) Conditions VGE=15VIC=1200A Vcc=1650VL100nHTj=125 Inductive load Eon(10%) Eoff(10%) 1.0 Con ditio ns VGE=15VIC=1200A Vcc=1650VL100nHTj=125 Inductive load IC IC V CE 1.0 90% V GE 10% tf toff 10% tr ton t1t3 Eon(10%)= Eon(full)= t5 t7 t4 t2 t4 V V IC t3 t2 IC t1 CE Eoff(full)= 0.0 t8 t6 Eoff(10%)= dt dt CE t 90% 0 V GE 0 t8 IC t7 t6 IC t5 VCE dt VCE dt 0.0 0 2 4 6 8 ) 10 Gate Resistance , Rg ( 2.0 Err(full) 1.5 Err(10%) Conditions 1.0 VGE=15VIF=1200A Vcc=1650VL100nHTj=125 Inductive load 0.1V CE V CE 0.5IRM 0.1IF IRM 0 0.5 t trr IF -IC t12 t9 Err(10%)= Err(full)= t11 t10 V I V t12 IF CE dt F CE dt t11 t10 t9 0.0 0 2 4 6 Gate Resistance , Rg ( ) 2 4 6 ) 8 Turn-off Loss vs. Gate Resistance TYPICAL 2.5 0 Gate Resistance , Rg ( Turn-on Loss vs. Gate Resistance Reverse Recovery Loss , Err (J/pulse) 10% 0 10% 10% 0 V CE 90% 0.5 8 10 Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 10 IGBT MODULE Spec.No.IGBT-SP-02005 R8 P5/6 MBN1200E33D TRANSIENT THERMAL IMPEDANCE Maximum Transient thermal impedance : Zth(j-c) (K/W) 0.1 FWD 0.01 I GBT 0.001 0.0001 0.001 0.01 0.1 Time : t(s) 1 10 Transient Thermal Impedance Curve Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder Arsenic and its compounds Si chip http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. For inquiries relating to the products, please contact nearest overseas representatives which is located "Inquiry" portion on the top page of a home page. Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/ http://store.iiic.cc/