IGBT MODULE Spec.No.IGBT-SP-02005 R8
P1/6
MBN1200E33D
Silicon N-channel IGBT
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70°C, N>30,000cycles)
∗ Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1200E33D
Collector Emitter Voltage V
CES
V 3,300
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,200
Collector Current 1ms I
Cp
A 2,400
DC I
F
1,200
Forward Current 1ms I
FM
A 2,400
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature T
stg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
6,000(AC 1 minute)
Terminals
(M4/M8)
- 2/10 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 12 V
CE
=3,300V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 20 60 V
CE
=3,300V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA -500
- +500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V - 4.2 5.2 I
C
=1,200A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 4.5 6.0 7.0 V
CE
=10V, I
C
=1,200mA, Tj=25
o
C
Input Capacitance C
ies
nF - 110
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Internal Gate Resistance Rge
Ω
- 1.2 - V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
- 1.9 3.1 V
CC
=1,650V, Ic=1,200A
Turn On Time
t
on
- 2.4 3.3 L=100nH
Fall Time t
f
- 1.0 2.5 R
G
=3.3Ω (3)
Switching Times
Turn Off Time t
off
µs
- 3.0 5.1 V
GE
=±15V, Tj=125
o
C
Peak Forward Voltage Drop V
FM
V - 2.5 3.0 IF=1,200A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs - 0.6 1.1 Vcc=1,650V, IF=1,200A, L=100nH
Tj=125
o
C
Turn On Loss E
on(10%)
J/P - 1.6 2.1
Turn Off Loss E
off(10%)
J/P - 1.3 1.7
Reverse Recovery Loss E
rr(10%)
J/P - 1.2 1.9
V
CC
=1,650V, Ic=1,200A, L=100nH
R
G
=3.3Ω (3)
V
GE
=±15V, Tj=125
o
C
Stray inductance module L
SCE
nH - 12 -
IGBT Rth(j-c)
- - 0.0085
Thermal Impedance
FWD Rth(j-c)
K/W
- - 0.017
Junction to case
Contact
Thermal Impedance
Rth(c-f)
K/W
- 0.006
- Case to fin
Notes:(3) R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
OUTLINE DRAWING
Weight : 1300(g)
Unit in mm
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IGBT MODULE Spec.No.IGBT-SP-02005 R8
P2/6
MBN1200E33D
CHARACTERISTICS CURVE
STATIC
CHARACTERISTICS
0
500
1000
1500
2000
0 1 2 3 4 5
F o r w a r d V o lt a g e , V F (V )
Forward Curent , IF (A)
F o r w a r d V o l ta g e o f fr ee -w h ee li n g d io d e
T Y P IC A L
T c = 2 5
℃
℃℃
℃
T c = 1 2 5
℃
℃℃
℃
TY PIC A L
0
500
1000
1500
2000
0 2 4 6 8 10
Collector to Emitter Voltage, VC E(V)
Collector Curent , Ic (A)
V
G E
=15V 13V 11V
Tc= 125
℃
℃℃
℃
C ollector C urrent vs.C ollector to Emitter Voltage
T Y P IC A L
0
500
1000
1500
2000
0 2 4 6 8 10
C o lle cto r to E m itte r V o lta ge , V C E (V )
Collector Curent , Ic (A)
V
G E
= 15 V 13V 11V
T c = 2 5
℃
℃℃
℃
C o lle cto r C u rre n t v s .C o llector to E m itter V o lta ge
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IGBT MODULE Spec.No.IGBT-SP-02005 R8
P3/6
MBN1200E33D
DEPENDENCE OF CURRENT
0.0
0.5
1.0
1.5
2.0
0 500 1000 1500
Collector Current , Ic (A)
Turn-on Loss , Eon (J/pulse)
Eon(Full)
Eon(10%)
TYPICAL
Turn-on Loss vs. Collector Current
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
I
C
V
GE
10%
10%
V
CE
0
0
t1
t3 t4 t2
Eon(10%)=
∫
I
C
・
V
CE
dt
Eon(full)=
∫
I
C
・
V
CE
dt
t4
t2
t3
t1
90%
tr
ton
10%
0.0
0.5
1.0
1.5
2.0
0 500 1000 1500
Collector Current , Ic (A)
Turn-off Loss , Eoff (J/pulse)
TYPICAL
Turn-off Loss vs. Collector Current
Eoff(10%)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(off)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Eoff(10%)=
∫
I
C
・
V
CE
dt
Eoff(full)=
∫
I
C
・
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8t7
t
0
0
t5 t6
tf
90%
90%
toff
0.0
0.5
1.0
1.5
2.0
2.5
0 500 1000 1500
Forward Current , IF (A)
Reverse Recovery Loss , Err (J/pulse)
TYPICAL
Recovery Loss vs. Forward Current
Err(Full)
Err(10%)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Err(10%)=
∫
I
F
・
V
CE
dt
Err(full)=
∫
I
F
・
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
-I
C
t10t11
t
0
t12
t9
I
F
trr
0.5I
RM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 500 1000 1500
Collector Current , Ic (A)
Switching time , ton , tr , toff , tf , trr (us)
TYPICAL
Switching time vs. Collector current
trr
tf
ton
tr
toff
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、Rg(on/off)=3.3Ω
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
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IGBT MODULE Spec.No.IGBT-SP-02005 R8
P4/6
MBN1200E33D
DEPENDENCE OF RG
0.0
1.0
2.0
3.0
4.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Turn-on Loss , Eon (J/pulse)
TYPICAL
Turn-on Loss vs. Gate Resistance
Eon(10%)
Eon(full)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IC=1200A
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
I
C
V
GE
10%
10%
V
CE
0
0
t1t3 t4 t2
Eon(10%)=
∫
I
C
・
V
CE
dt
Eon(full)=
∫
I
C
・
V
CE
dt
t4
t2
t3
t1
90%
tr
ton
10%
0.0
0.5
1.0
1.5
2.0
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Turn-off Loss , Eoff (J/pulse)
TYPICAL
Turn-off Loss vs. Gate Resistance
Eoff(10%)
Eoff(full)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IC=1200A
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Eoff(10%)=
∫
I
C
・
V
CE
dt
Eoff(full)=
∫
I
C
・
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8
t7
t
0
0
t5
t6
tf
90%
90%
toff
0.0
0.5
1.0
1.5
2.0
2.5
0 2 4 6 8 10
Gate Resistance , Rg (
Ω
ΩΩ
Ω
)
Reverse Recovery Loss , Err (J/pulse)
TYPICAL
Recovery Loss vs. Gate Resistance
Err(10%)
Err(full)
【
【 【
【Conditions
ConditionsConditions
Conditions】
】】
】
VGE=±15V、IF=1200A
Vcc=1650V、L≒100nH、Tj=125℃
Inductive load
Err(10%)=
∫
I
F
・
V
CE
dt
Err(full)=
∫
I
F
・
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
-I
C
t10t11
t
0
t12
t9
I
F
trr
0.5I
RM
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IGBT MODULE Spec.No.IGBT-SP-02005 R8
P5/6
MBN1200E33D
TRANSIENT THERMAL IMPEDANCE
Negative environmental impact material
Please note the following negative environmental impact materials are contained in the product
in order to keep product characteristic and reliability level.
Material Contained part
Lead (Pb) and its compounds Solder
Arsenic and its compounds Si chip
Transient Thermal Impedance Curve
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time : t(s)
IGBT
IGBTIGBT
IGBT
FWD
FWDFWD
FWD
Transient thermal impedance : Zth(j-c) (K/W)
Maximum
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1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual
brochure before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets.
Hitachi assumes no responsibility for any intellectual property claims or any other
problems that may result from applications of information, products or circuits described
in this data sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum
rating.
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party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
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Notices
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