VTP Process Photodiodes VTP8350H PACKAGE DIMENSIONS inch (mm) CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, pages 45-46) SYMBOL CHARACTERISTIC VTP8350H TEST CONDITIONS Min. UNITS Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 350 mV VOC Temperature Coefficient 2850 K -2.0 mV/C Dark Current H = 0, VR = 10 V RSH Shunt Resistance H = 0, V = 10 mV ISC TC ISC VOC TC VOC ID CJ Junction Capacitance H = 0, V = 3 V Re Responsivity 940 nm SR Sensitivity @ Peak 65 Typ. 80 A .20 %/C 30 100 nA G 50 pF A/(W/cm2) .06 .55 A/W range Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 60 Degrees NEP Noise Equivalent Power 1.8 x 10-13 (Typ.) Specific Detectivity 1.5 x 10 12 (Typ.) W Hz cm Hz W D* 400 33 PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 1150 nm 140 V Phone: 877-734-6786 Fax: 450-424-3413 61 nm 925 www.perkinelmer.com/opto