MMBT2907AT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODELS: MMBT2907AT Features * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222AT) Ultra-Small Surface Mount Package Also Available in Lead Free Version A TOP VIEW * * * * G H Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please See Ordering Information, Note 4, on Page 2 Terminal Connections: See Diagram Marking (See Page 2): 2F Ordering & Date Code Information, See Page 2 Maximum Ratings B C E B Mechanical Data * * * * SOT-523 C K M N J L D C B E Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 All Dimensions in mm @ TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30269 Rev. 3 - 2 1 of 4 www.diodes.com MMBT2907AT a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO -60 3/4 V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 3/4 V IE = -10mA, IC = 0 Collector Cutoff Current ICBO 3/4 -10 nA mA VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125C Collector Cutoff Current ICEX 3/4 -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL 3/4 -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 3/4 3/4 3/4 300 3/4 3/4 IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) 3/4 -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) 3/4 -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 3/4 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 30 pF OFF CHARACTERISTICS (Note 2) Base Cutoff Current IC = -10mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain -10V -10V -10V -10V -10V SMALL SIGNAL CHARACTERISTICS fT 200 3/4 MHz Turn-On Time toff 3/4 45 ns Delay Time td 3/4 10 ns Rise Time tr 3/4 40 ns Turn-Off Time toff 3/4 100 ns Storage Time ts 3/4 80 ns Fall Time tf 3/4 30 ns Current Gain-Bandwidth Product VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Ordering Information Notes: 2. 3. 4. VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA (Note 3 & 4) Device Packaging Shipping MMBT2907AT-7 SOT-523 3000/Tape & Reel Short duration test pulse used to minimize self-heating effect. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. For lead free terminal plating part number, please add "-F" suffix to part number above. Example: MMBT2907AT-7-F. Marking Information 2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2FYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 Code J K L M N P R Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30269 Rev. 3 - 2 2 of 4 www.diodes.com MMBT2907AT 30 20 150 C, CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) 200 100 50 Cibo 10 5.0 Cobo 1.0 -0.1 0 0 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve, Total Package -1.0 -10 -30 REVERSE VOLTAGE (V) Fig. 2 Capacitances (Typical) 1.6 1.4 IC = 300mA IC = 10mA IC = 100mA 1.2 IC = 1mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region DS30269 Rev. 3 - 2 3 of 4 www.diodes.com MMBT2907AT 1000 VCE = 5V IC = 10 IB 0.5 TA = 150C 0.4 hFE, DC CURRENT GAIN (NORMALIZED) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.6 0.3 TA = 150C TA = 25C 0.2 0.1 100 TA = 25C TA = -50C 10 TA = -50C 0 1 1 10 1000 100 1 1.0 1000 VCE = 5V fT, GAIN BANDWIDTH PRODUCT (MHz) VBE(ON), BASE EMITTER VOLTAGE (V) 1000 100 10 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current 0.9 TA = -50C 0.8 0.7 0.6 TA = 25C 0.5 0.4 TA = 150C 0.3 0.2 VCE = 5V 100 10 1 0.1 1 10 100 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current DS30269 Rev. 3 - 2 1 4 of 4 www.diodes.com MMBT2907AT