DS30269 Rev. 3 - 2 1 of 4 MMBT2907AT
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MMBT2907AT
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
·Epitaxial Planar Die Construction
·Complementary NPN Type Available
(MMBT2222AT)
·Ultra-Small Surface Mount Package
·Also Available in Lead Free Version
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5.0 V
Collector Current - Continuous IC-600 mA
Power Dissipation (Note 1) Pd150 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 833 °C/W
Operating and Storage and Temperature Range Tj,T
STG -55 to +150 °C
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
M
JL
D
BC
H
K
G
C
TOP VIEW
E
B
N
Mechanical Data
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
·Case: SOT-523, Molded Plastic
·Case material - UL Flammability Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202,
Method 208
·Also Available in Lead Free Plating
(Matte Tin Finish). Please See
Ordering Information, Note 4, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): 2F
·Ordering & Date Code Information, See Page 2
SOT-523
Dim Min Max Typ
A0.15 0.30 0.22
B0.75 0.85 0.80
C1.45 1.75 1.60
D¾¾0.50
G0.90 1.10 1.00
H1.50 1.70 1.60
J0.00 0.10 0.05
K0.60 0.80 0.75
L0.10 0.30 0.22
M0.10 0.20 0.12
N0.45 0.65 0.50
a0°8°¾
All Dimensions in mm
E
B
C
SPICE MODELS: MMBT2907AT
DS30269 Rev. 3 - 2 2 of 4 MMBT2907AT
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Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage V(BR)CBO -60 ¾VIC= -10mA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾VIC= -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾VIE = -10mA, IC = 0
Collector Cutoff Current ICBO ¾-10 nA
mA
VCB = -50V, IE= 0
VCB = -50V, IE= 0, TA = 125°C
Collector Cutoff Current ICEX ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current IBL ¾-50 nA VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE
75
100
100
100
50
¾
¾
¾
300
¾
¾
IC = -100µA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ¾-0.4
-1.6 VIC= -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT) ¾-1.3
-2.6 VIC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ¾8.0 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo —30pF
VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT200 ¾MHz VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time toff ¾45 ns
Delay Time td¾10 ns VCC = -30V, IC = -150mA,
IB1 = -15mA
Rise Time tr¾40 ns
Turn-Off Time toff ¾100 ns
Storage Time ts¾80 ns VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Fall Time tf¾30 ns
Notes: 2. Short duration test pulse used to minimize self-heating effect.
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
4. For lead free terminal plating part number, please add "-F" suffix to part number above. Example: MMBT2907AT-7-F.
Device Packaging Shipping
MMBT2907AT-7 SOT-523 3000/Tape & Reel
(Note 3 & 4)
Ordering Information
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 1998 1999 2000 2001 2002 2003 2004
Code JKLM N PR
Date Code Key
2F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2FYM
Marking Information
DS30269 Rev. 3 - 2 3 of 4 MMBT2907AT
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I , BASE CURRENT (mA)
B
Fig. 3 Typical Collector Saturation Region
V,C
O
LLECT
O
R-EMITTER V
O
LTAGE (V)
CE
0.001 0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1 110 100
I = 1mA
C
I=10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
1.0
5.0
20
10
30
-0.1 -10
-1.0 -30
C, CAPACITANCE (pF)
REVERSE VOLTAGE (V)
Fi
g
. 2 Capacitances
(
T
y
pical
)
Cobo
Cibo
0 100 200
T , AMBIENT TEMPERATURE (ºC)
A
Fi
g
. 1 Power Deratin
g
Curve, Total Packa
g
e
P , POWER DISSIPATION (mW)
d
0
50
100
150
200
DS30269 Rev. 3 - 2 4 of 4 MMBT2907AT
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1
10
1000
100
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fig. 7, Gain Bandwidth Product vs.
Collector Current
V=5V
CE
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
.
0
0.1 110 100
V , BASE EMITTER VOLTAGE (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 6, Base Emitter Voltage
vs. Collector Current
V=5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
1
10
1000
100
110 1000
100
h , DC CURRENT
FE
GAIN (NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 5, DC Current Gain vs
Collector Current
V= 5V
CE
T= 150°C
A
T= 25°C
A
T = -50°C
A
0
0.1
0.2
0.3
0.6
0.5
0.4
110 100 1000
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Collector Emitter Saturation Voltage vs.
Collector Current
V,C
O
LLECT
O
RT
O
EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
IC
IB
=10
T = 150°C
A
T=25°C
A
T = -50°C
A