2N4856 | 2N4857 | 2N4858
N-CHANNEL JFETS - 1
CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com
Part Number Package 19500/ Breakdown Voltage Current RDS(on)
2N4856 TO-18 385 40V 175mA 25 Ω
2N4857 TO-18 385 40V 100mA 40 Ω
2N4858 TO-18 385 40V 80mA 60 Ω
ORDERING GUIDE
JAN2N4856 JANTX2N4856 JANTXV2N4856
JAN2N4857 JANTX2N4857 JANTXV2N4857
JAN2N4858 JANTX2N4858 JANTXV2N4858
KEY FEATURES
JAN/JANTX/JANTXV STANDARD PRODUCTS
QUALIFIED PER MIL-PRF-19500/385
LOW ON RESISTANCE
FAST SWITCHING
HIGH OFF ISOLATION
S LEVEL EQUIVALENT SCREENING OPTIONS
RADIATION TOLERANT
SECOND SOURCE FOR VISHAY & SILICONIX
ABSOLUTE MAXIMUM RATINGS
Gate-Source Voltage -40V Storage Temperature -65 to 200°C
Gate Current 50mA Operating Junction Temperature -65 to 200°C
Lead Temperature
(1/16 from case, 10 sec) 300°C Power Dissipation
Derating
1800mW
10.3mW/°C to TC ≥ 25°C
DS
G and Case
12
3
PACKAGE OUTLINE & PIN CONNECTIONS
Min. Max. Min. Max.
CD 0.178 0.195 4.52 4.95
CH 0.170 0.210 4.32 5.33
HD 0.209 0.230 5.31 5.84
L1 0.050 1.27
L2 0.250 6.35
LC
LD 0.016 0.021 0.41 0.53
LL 0.500 0.750 2.70 19.05
LU 0.016 0.019 0.41 0.48
Q 0.030 0.76
r 0.010 0.25
TL 0.028 0.048 0.71 1.22
TW 0.036 0.046 0.91 1.17
α45° TP
Inches mm
Dimensions
Ltr
2.54 TP
P 0.100 2.54
0.100 TP
CD
CH
Q
L1
L2
LU
LL
LD
SEATING
PLATE
HD
1 2
3
TW
TL
LC
L
C
r
α
P
2N4856 | 2N4857 | 2N4858
N-CHANNEL JFETS - 2
Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com
2n4856_8-ds-revC-0319.indd
© 2019 Solitron Devices, Inc.
This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice.
ELECTRICAL SPECIFICATIONS
Typical @ 25°C unless otherwise noted
Parameter Symbol Min. Max. Unit
Gate-Source Breakdown Voltage
VDS =0Vdc, IG = 1.0Adc V(BR)GSS -40 Vdc
Gate-Source “O” State Voltage
VDS = 15Vdc, ID = 0.5nAdc 2N4856
2N4857
2N4858
VGS(on)
-4
-2
-0.8
-10
-6
-4
Vdc
Vdc
Vdc
Gate Reverse Current
VDS = 0Vdc, VGS = -20Vdc
VDS = 0Vdc, VGS = -15Vdc
IGSS -0.25
-0.25
nA
nA
Drain Current
VDS = 15Vdc, VGS = -10Vdc
VDS = 15Vdc, VGS = 0Vdc 2N4856
2N4857
2N4858
ID(o) 50
20
8
0.25
175
100
80
nA
mA
mA
mA
Static Drain - Source “On” State Resistance
VGS = 0Vdc, ID = 1mAdc 2N4856
2N4857
2N4858
RDS(on)
25
40
60
Ω
Ω
Ω
Drain Source “On” State Voltage
VGS = 0Vdc, ID = 20mAdc
VGS = 0Vdc, ID = 10mAdc
VGS = 0Vdc, ID = 5mAdc
2N4856
2N4857
2N4858
VDS(on)
0.75
0.5
0.5
Vdc
Vdc
Vdc
Small Signal, Common Source Reverse Transfer Capacitance
VGS = -10Vdc VDS, VD = 0Vdc, f = 1.0MHz
C1 = 0.1µF, L1 =L2 ≥ 500µH
Crss 8 pF
Small Signal, Common Source Short-Circuit Input Capacitance
VGS = -10Vdc VDS, VD = 0Vdc, f = 1.0MHz
C1 = 0.1µF, C2 = 20.1m
FL1 = L2 ≥ 500µH
Ciss 8 pF
Turn On Delay Time
2N4856
2N4857
2N4858
tD(on)
6
6
10
nS
nS
nS
Rise Time
2N4856
2N4857
2N4858
tr
3
4
10
nS
nS
nS
Turn O Delay Time
2N4856
2N4857
2N4858
td(o)
25
50
100
nS
nS
nS
