Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 4 1Publication Order Number:
MMBTA92LT1/D
MMBTA92LT1
Preferred Device
High Voltage Transistor
PNP Silicon
Features
•Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS
Rating Symbol MMBTA92 Unit
Collector−Emitter Voltage VCEO −300 Vdc
Collector−Base Voltage VCBO −300 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambi-
ent RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
MMBTA92LT1 SOT−23 3000 / Tape & Reel
MMBTA92LT1G SOT−23
SOT−23 (TO−236AF)
CASE 318
Style 6
3000 / Tape & Reel
MARKING
DIAGRAM
2D
2D = Specific Device Code
12
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBTA92LT3 SOT−23 10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBTA92LT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −300 − Vdc
Collector−Base Breakdown Voltage
(IC = −100 Adc, IE = 0) V(BR)CBO −300 − Vdc
Emitter−Base Breakdown Voltage
(IE = −100 Adc, IC = 0) V(BR)EBO −5.0 − Vdc
Collector Cutoff Current
(VCB = −200 Vdc, IE = 0) ICBO − −0.25 Adc
Emitter Cutoff Current
(VEB = −3.0 Vdc, IC = 0) IEBO − −0.1 Adc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −30 mAdc, VCE = −10 Vdc)
hFE 25
40
25
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc
Base−Emitter Saturation Voltage
(IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT50 − MHz
Collector−Base Capacitance
(VCB = −20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.0 pF
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
MMBTA92LT1
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3
Figure 1. DC Current Gain
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
150
90
70
50
30
10
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
f, CURRENT−GAIN BANDWIDTH (MHz)
T
1
Figure 3. Current−Gain − Bandwidth
130
21
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Cib @ 1MHz
100
1.0
Ccb @ 1MHz
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
110
3579 1917151311
VBE(on) @ 25°C, VCE = 10 V
VCE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ −55°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ −55°C, IC/IB = 10
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ −55°C, VCE = 10 V
Figure 4. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
300
0.1 1.0 10
250
200
150
0
hFE, DC CURRENT GAIN
TJ = +125°C
25°C
−55°C
VCE = 10 Vdc
100
50
100
MMBTA92LT1
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4
PACKAGE DIMENSIONS
DJ
K
L
A
C
BS
H
GV
3
12
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
Figure 5. SOT−23
2.0
0.079
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MMBTA92LT1/D
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