BF244B - Fairchild Semiconductor

BF244A

BF244B

BF244C

N-Channel RF Amplifier

This device is designed for RF amplifier and mixer applications

operating up to 450 MHz, and for analog switching requiring low

capacitance. Sourced from Process 50.

Absolute Maximum Ratings* T A = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T A = 25°C unless otherwise noted

Symbol Characteristic Max Units

BF244A / B F244B / BF244C

PDTotal D evice Dissipation

Derate above 25°C350

2.8 mW

mW/°C

RθJC Therma l Resista n ce, Junction to Case 125 °C/W

RθJA Thermal Resistance, Junctio n to Ambien t 357 °C/W

Symbol Parameter Value Units

VDG Drain-Gate Voltage 30 V

VGS Gate-Source Voltage - 30 V

IDDrain Current 50 mA

IGF Forward Gate Current 10 mA

Tstg Storage Temperat ure Range -55 to +150 °C

SGDTO-92

1997 Fairchild Semiconductor Corporation

BF244A / BF244B / BF244C

5

Electrical Characteristics T A = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Typ Max Units

ON CHARACTERISTICS

IDSS Zero-Gat e V ol tage Drain Current VDS = 15 V, VGS = 0 244A

244B

244C

2.0

6.0

12

6.5

15

25

mA

SMALL SIGNAL CHARACTERISTICS

yfs Forward Transfer Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz

VDS = 15 V, VGS = 0, f = 200 MHz 3.0 5.6 6.5 mmhos

mmhos

yos Output Admittance VDS = 15 V, VGS = 0, f = 1.0 kHz 40

µ

mhos

yrs Reverse Transfer A dmittance VDS = 15 V, VGS = 0, f = 200 MHz 1.0

µ

mhos

Ciss Input Capacitance VDS = 20 V, VGS = - 1.0 V 3.0 pF

Crss Reverse Transfer Capac i tance VDS = 20 V, VGS = - 1.0 V,

f = 1.0 MHz 0.7 pF

Coss Output Capacitance VDS = 20 V, VGS = - 1.0 V,

f = 1.0 MHz 0.9 pF

NF Noise Figure VDS = 15 V, VGS = 0, RG = 1.0 kΩ,

f = 100 MHz 1.5 dB

F(Yfs)Cut-Off Frequenc y VDS = 15 V, VGS = 0 700 MHz

Typical Characteristics

V(BR)GSS Gate-Sourc e B reak down Volt age IG = 1.0 µA, VDS = 0 30 V

IGSS Gate Reverse Current VGS = - 20 V, V DS = 0 5.0 nA

VGSS(off) Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA - 0.5 - 8.0 V

VGS Gate-Sourc e V o ltage VDS = 15 V, ID = 200 µA244A

244B

244C

- 0.4

- 1.6

- 3.2

- 2.2

- 3.8

- 7.5

V

Tr ansf er Char act e rist ics

-5-4-3-2-10

0

4

8

12

16

20

V - GATE-SOURCE VOLTAGE (V)

I - DRAIN CURRENT (mA)

D

GS(OFF)

V = -4.5V V = 15V

DS

T = +25 C

A

O

-2.5 V

T = -55 C

O

A

T = +12 5 C

AOT = -55 C

O

A

T = +25 C

A

O

T = +12 5 C

AO

GS

C hannel R esistance vs Temp era tur e

-50 0 50 100 150

10

20

30

50

100

200

300

500

1000

T - AMBIENT TEMPERATURE ( C)

r - DRAIN ON RESISTANCE ( )

Ω

V = -1.0V

GS(OFF)

-2.5 V

-5.0V

-8.0 V

V = 100mV

DS

V = 0 V

GS

DS

A

BF244A / BF244B / BF244C

N-Channel RF Amplifier

(continued)

BF244A / BF244B / BF244C

Typical Characteristics (continued)

N-Channel RF Amplifier

(continued)

Co mm on Drain -Sou rc e

Characteristics

0 0.2 0.4 0.6 0.8 1

0

1

2

3

4

5

V - DRAIN-SOURCE VOLTAGE(V)

I -- DRAIN CURRENT (mA)

V = 0V

GS

-2.5V

DS

-0.5V

-4.0V

-2.0V

-1.0V

-3.5V

-3.0V

-1.5V

T = +25 C

A

O

TYP V = -5.0V

GS(OFF)

D

Output Conductance vs

Dra in Curren t

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

0.1

0.5

1

5

10

20

I -- DRAIN CURRENT (mA)

gos -- OUTPUT CONDUCTANCE (u mho s)

D

15

10

T = +25 C

A

O

f = 1.0 kHz

15

10

5

20

15V

10V

5.0V

20V

20

V = 5v

DG

V = -5.5V

GS(OFF)

V = -3.5V

GS(OFF)

V = -1.5V

GS(OFF)

Transconductance

Paramete r Interactio ns

1235710

10

20

1

2

3

5

10

20

30

50

100

V - GATE-SOUR CE VOLTAGE(V)

r -- DRAIN "ON" RESISTANC E ( )

gfs --- TRANSCONDUCTANCE ( mmhos )

GS

I -- DRAIN CURRENT ( mA )

DSS

DS Ω

gf s, I @ V = 15 V, V = 0 PULSE

GS

DSDSS

r @ V = 100mV, V = 0

GS

DS

V @ V = 15V, I = 1nA

GS(OFF) GS D

--

N ois e Voltage vs Frequ ency

0.01 0.03 0.1 0.3 1 3 10 30 100

1

5

10

f -- FREQUENCY (kHz)

e - NOISE V OLTAGE ( nV/ Hz )

V = 15V

DG

BW = 6.0 Hz @ f = 10 Hz, 100 Hz

= 0.2 f @ f > 1.0 kHz

I = 0.5 mA

D

I = 3 mA

D

n

Transconductance

Characteristics

-5-4-3-2-10

0

1

2

3

4

5

6

7

V - GAT E-SOURCE VOLTAGE(V)

gfs -- TRANS CONDUCTANCE (m mhos)

V = -4.5V

GS(OFF)

V = 15V

DS

T = +25 C

A

O

-2.5 V

T = -55 C

O

A

T = +125 C

AO

T = -55 C

O

A

T = +25 C

A

O

T = +125 C

AO

GS

T ransconductance vs

Drain Curre n t

0.1

0.5

1

5

10

gfs -- TRANSCONDUCTANCE (mmhos)

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10

I - DRAIN CURRENT (mA)

D

V = - 5V

GS(OFF)

V = - 1.5V

GS(OFF)

T = -55 C

O

A

T = +25 C

A

O

T = +125 C

AO

T = -55 C

O

AT = +25 C

A

O

T = +125 C

AO

V = 15V

f = 1.0 kHz

DG

5

Typical Characteristics (continued)

Capacitance vs V oltage

-20-15-10-50

1

5

10

V -- GATE-SOURCE VOLTAGE(V)

C ( C ) -- CAPACITANCE (pF)

GS

is

rs

C ( V = 0 V)

C ( V = 15 V)

DS

is

rs

f = 0.1 - 1.0 MHz

Noise Figure Frequency

10 20 30 50 100 200 300 500 1000

0

1

2

3

4

5

f -- FRE QUENCY (MHz)

NF -- NOISE FIGURE (dB)

V = 15V

DS

I = 5.0 mA

R = 1.0 k

T = +25 C

A

O

Ω

D

g

Common Gate Characteristics

Input Adm ittanc e

100 200 300 500 700 1000

1

5

10

f -- FREQUENCY (MHz)

Y -- INPUT ADMITTANCE (mmhos)

V = 15V

V = 0

GS

DS

(CG)

gigs

igs

bigs

Outpu t Admittan ce

100 200 300 500 700 1000

1

f -- FREQUENCY (MHz)

Y -- OUTPUT CO NDUCTANCE (mmhos)

V = 15V

V = 0

GS

DS

(CG)

ogs

b (x 10)

OgS

gOgs

R everse Tr ansadmit tance

100 200 300 500 700 1000

1

f -- F REQUENCY (MHz)

Y -- REVERSE TRANSFER (mmhos)

rgs

V = 15V

V = 0

GS

DS

(CG) grgs

- b rgs

Forward T ransadmittance

100 200 300 500 700 1000

1

5

10

f - - FREQUENCY (M Hz)

Y -- FORWARD TRANSFER (mmhos)

V = 15V

V = 0

GS

DS

(CG)

-bfgs

fgs

+gfgs

BF244A / BF244B / BF244C

N-Channel RF Amplifier

(continued)

BF244A / BF244B / BF244C

N-Channel RF Amplifier

(continued)

Common Source Characteristics

Input Adm ittance

100 200 300 500 700 1000

1

5

10

f -- FREQUENCY (MHz)

Y -- INPUT ADMITTANCE (mmhos)

V = 15V

V = 0

GS

DS

(CS)

giss

is s

biss

Output Adm ittance

100 200 300 500 700 1000

1

f -- FREQUENCY (MHz)

Y -- OUTPUT CONDUCTANCE ( mmhos)

V = 1 5 V

V = 0

GS

DS

(CS)

OSS

b (x 10)

OSS

gOSS

Forward Transad mi ttance

100 200 300 500 700 1000

1

5

10

f -- FREQUENCY (MHz)

Y -- FORWARD TRANSFER (mmhos)

V = 15V

V = 0

GS

DS

(CS)

-b fss

fss

+g fss

R eve r se Tr ansadm i tt ance

100 200 300 500 700 1000

1

5

10

f -- FREQUENCY (MHz)

Y -- REVERSE TR ANSFER (mmh os)

rss

V = 15V

V = 0

GS

DS

(CS)

- b

-g ( X 0.1)

rss

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

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