TC4423M/TC4424M/TC4425M 3A Dual High-Speed Power MOSFET Drivers Features General Description * High Peak Output Current: 3A * Wide Input Supply Voltage Operating Range: - 4.5V to 18V * High Capacitive Load Drive Capability: - 1800 pF in 25 ns * Short Delay Times: <40 ns (typ) * Matched Rise/Fall Times * Low Supply Current: - With Logic `1' Input - 3.5 mA (Max) - With Logic `0' Input - 350 A (Max) * Low Output Impedance: 3.5 (typ) * Latch-Up Protected: Will Withstand 1.5A Reverse Current * Logic Input: Will Withstand Negative Swing Up To 5V * ESD Protected: 4 kV * Pin-compatible with the TC4426M/TC4427M/ TC4428M and TC4426AM/TC4427AM/ TC4428AM devices * Wide Operating Temperature Range: - -55C to +125C * See TC4423/TC4424/TC4425 Data Sheet (DS21421) for additional temperature range and packaging offerings The TC4423M/TC4424M/TC4425M devices are a family of 3A, dual output buffers/MOSFET drivers. Pincompatible with both the TC4426M/TC4427M/ TC4428M and TC4426AM/4427AM/4428AM families (dual 1.5A drivers), the TC4423M/TC4424M/TC4425M family has an increased latch-up current rating of 1.5A, making them even more robust for operation in harsh electrical environments. The TC4423M/TC4424M/TC4425M inputs may be driven directly from either TTL or CMOS (2.4V to 18V). In addition, 300 mV of hysteresis is built-in to provide noise immunity and to allow the device to be driven from slowly rising or falling waveforms. Package Types 8-Pin CERDIP TC4423M TC4424M TC4425M NC 1 IN A 2 GND 3 IN B 4 TC4423M TC4424M TC4425M Applications As MOSFET drivers, the TC4423M/TC4424M/ TC4425M can easily charge 1800 pF gate capacitance in under 35 nsec, while providing low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. 8 NC NC NC 7 OUT A OUT A OUT A 6 VDD VDD VDD 5 OUT B OUT B OUT B * Switch-mode Power Supplies * Pulse Transformer Drive * Line Drivers 2005-2013 Microchip Technology Inc. DS21937B-page 1 TC4423M/TC4424M/TC4425M Functional Block Diagram VDD Inverting 300 mV Output Non-inverting Input Effective Input C = 20 pF (Each Input) 4.7V GND(1) TC4423M Dual Inverting TC4424M Dual Non-inverting TC4425M One Inverting, One Non-inverting Note 1: Unused inputs should be grounded. DS21937B-page 2 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings Supply Voltage ................................................................+22V Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND - 5V) DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA = +25C, with 4.5V VDD18V. Parameters Sym Min Typ Max Units Conditions Logic `1', High Input Voltage VIH 2.4 -- -- V Logic `0', Low Input Voltage VIL -- -- 0.8 V Input Current IIN -1 -- 1 A High Output Voltage VOH VDD - 0.025 -- -- V Low Output Voltage VOL -- -- 0.025 V Output Resistance, High ROH -- 2.8 5 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL -- 3.5 5 IOUT = 10 mA, VDD = 18V Peak Output Current IPK -- 3 -- A Latch-Up Protection Withstand Reverse Current IREV -- >1.5 -- A Duty cycle2%, t 300 sec. Rise Time tR -- 23 35 ns Figure 4-1, Figure 4-2, CL = 1800 pF Fall Time tF -- 25 35 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD1 -- 33 75 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD2 -- 38 75 ns Figure 4-1, Figure 4-2, CL = 1800 pF IS -- -- 1.5 0.15 2.5 0.25 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Input 0VVINVDD Output Switching Time (Note 1) Power Supply Power Supply Current Note 1: Switching times ensured by design. 2005-2013 Microchip Technology Inc. DS21937B-page 3 TC4423M/TC4424M/TC4425M DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD18V. Parameters Sym Min Typ Max Units Conditions Logic `1', High Input Voltage VIH 2.4 -- -- V Logic `0', Low Input Voltage VIL -- -- 0.8 V Input Current IIN -10 -- +10 A VOH VDD - 0.025 -- -- V Low Output Voltage VOL -- -- 0.025 V Output Resistance, High ROH -- 3.7 8 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL -- 4.3 8 IOUT = 10 mA, VDD = 18V Peak Output Current IPK -- 3.0 -- A Latch-Up Protection Withstand Reverse Current IREV -- >1.5 -- A Duty cycle2%, t 300 sec Rise Time tR -- 28 60 ns Figure 4-1, Figure 4-2, CL = 1800 pF Fall Time tF -- 32 60 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD1 -- 32 100 ns Figure 4-1, Figure 4-2, CL = 1800 pF Delay Time tD2 -- 38 100 ns Figure 4-1, Figure 4-2, CL = 1800 pF IS -- -- 2.0 0.2 3.5 0.3 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Input 0VVINVDD Output High Output Voltage Switching Time (Note 1) Power Supply Power Supply Current Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym Min Typ Max Units TA -55 -- +125 C Conditions Temperature Ranges Specified Temperature Range (M) Maximum Junction Temperature TJ -- -- +150 C Storage Temperature Range TA -65 -- +150 C JA -- 150 -- C/W Package Thermal Resistances Thermal Resistance, 8L-CERDIP DS21937B-page 4 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 100 100 4700 pF 4700 pF 80 tFALL (nsec) tRISE (nsec) 80 3300 pF 60 2200 pF 40 1500 pF 1000 pF 20 470 pF 0 2200 pF 40 1500 pF 1000 pF 20 470 pF 0 4 6 8 FIGURE 2-1: Voltage. 10 12 VDD (V) 14 16 18 Rise Time vs. Supply 4 6 8 10 12 VDD (V) FIGURE 2-4: Voltage. 5V tFALL (nsec) 60 10V 15V 40 0 100 Fall Time vs. Supply 5V 60 10V 15V 40 1000 0 100 10,000 1000 CLOAD (pF) CLOAD (pF) FIGURE 2-2: Load. Rise Time vs. Capacitive FIGURE 2-5: Load. 32 10,000 Fall Time vs. Capacitive 100 CLOAD = 2200 pF tRISE 22 tFALL 20 -35 FIGURE 2-3: Temperature. -15 DELAY TIME (nsec) tRISE 26 24 CLOAD = 2200 pF VDD = 10V tFALL 28 TIME (nsec) 18 20 20 18 -55 16 80 80 30 14 100 100 tRISE (nsec) 3300 pF 60 tD1 80 60 40 tD2 20 5 25 45 TA (C) 65 85 105 125 Rise and Fall Times vs. 2005-2013 Microchip Technology Inc. 0 FIGURE 2-6: Amplitude. 1 2 3 4 5 6 7 INPUT (V) 8 9 10 11 12 Propagation Delay vs. Input DS21937B-page 5 TC4423M/TC4424M/TC4425M Typical Performance Curves (Continued) 50 50 CLOAD = 2200 pF CLOAD = 2200 pF 45 DELAY TIME (nsec) DELAY TIME (nsec) 45 40 35 tD2 30 tD1 tD2 40 35 tD1 30 25 25 20 -55 20 4 6 8 FIGURE 2-7: Supply Voltage. 10 12 VDD (V) 14 16 18 Propagation Delay Time vs. -35 -15 FIGURE 2-10: Temperature. 5 25 45 TA (C) 65 85 105 125 Propagation Delay Time vs. 1.4 TA = 25C BOTH INPUTS = 1 1.2 IQUIESCENT (mA) IQUIESCENT (mA) 1 BOTH INPUTS = 0 0.1 1.0 0.8 BOTH INPUTS = 1 0.6 0.4 0.2 0.01 4 6 8 FIGURE 2-8: Supply Voltage. 10 12 VDD (V) 14 16 18 Quiescent Current vs. -35 FIGURE 2-11: Temperature. 14 -15 5 25 45 TA (C) 65 85 105 125 Quiescent Current vs. 14 12 12 WORST CASE @ TJ = +150C 10 RDS(ON) () RDS(ON) () BOTH INPUTS = 0 0.0 -55 8 6 TYP @ TA = +25C 4 WORST CASE @ TJ = +150C 10 8 6 TYP @ TA = +25C 4 2 2 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-9: Output Resistance (Output High) vs. Supply Voltage. DS21937B-page 6 4 6 8 10 12 VDD (V) 14 16 18 FIGURE 2-12: Output Resistance (Output Low) vs. Supply Voltage. 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M Typical Performance Curves (Continued) Note: Load on single output only 60 60 VDD = 18V VDD = 18V 50 3300 pF 50 1000 pF ISUPPLY (mA) ISUPPLY (mA) 634 kHz 40 30 355 kHz 20 200 kHz 40 30 10,000 pF 20 100 pF 63.4 kHz 10 112.5 kHz 35.5 kHz 10 20 kHz 0 100 FIGURE 2-13: Capacitive Load. 1000 CLOAD (pF) 0 10,000 Supply Current vs. 1.125 MHz 40 200 kHz 634 kHz 355 kHz 0 100 1000 CLOAD (pF) FIGURE 2-14: Capacitive Load. 60 50 40 30 10 0 10,000 Supply Current vs. 10 FIGURE 2-17: Frequency. 120 100 FREQUENCY (kHz) 1000 Supply Current vs. 120 VDD = 6V 4700 pF VDD = 6V 100 100 80 1.125 MHz 60 3.55 MHz 634 kHz 40 2 MHz FIGURE 2-15: Capacitive Load. 10,000 pF 80 2200 pF 60 1000 pF 40 100 pF 355 kHz 20 0 100 ISUPPLY (mA) ISUPPLY (mA) 100 pF 10,000 pF 20 112.5 kHz 63.4 kHz 20 kHz 10 3300 pF 1000 pF 70 50 20 Supply Current vs. VDD = 12V 80 2 MHz 60 30 1000 90 VDD = 12V ISUPPLY (mA) ISUPPLY (mA) 70 100 FREQUENCY (kHz) FIGURE 2-16: Frequency. 90 80 10 20 112.5 kHz 20 kHz 1000 CLOAD (pF) 10,000 Supply Current vs. 2005-2013 Microchip Technology Inc. 0 10 FIGURE 2-18: Frequency. 100 FREQUENCY (kHz) 1000 Supply Current vs. DS21937B-page 7 TC4423M/TC4424M/TC4425M Typical Performance Curves (Continued) 10-7 8 6 4 A * sec 2 10-8 8 6 4 2 10-9 0 2 4 6 8 10 12 14 16 18 VIN (V) Note: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. FIGURE 2-19: Energy. DS21937B-page 8 TC4423M Crossover 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: 8-Pin CERDIP 3.1 PIN FUNCTION TABLE Symbol Description 1 NC No connection 2 IN A Input A 3 GND Ground 4 IN B Input B 5 OUT B 6 VDD 7 OUT A 8 NC Output B Supply input Output A No connection Input A (IN A) IN A is a TTL/CMOS-compatible input that controls OUT A. This input has 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals, as well as providing noise immunity. 3.2 3.4 Output A (OUT A) OUT A is a CMOS, push-pull output that is capable of sourcing and sinking 3A peaks of current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 1.5A. 3.5 Supply Input (VDD) VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local ceramic capacitor. This bypass capacitor provides a localized lowimpedance path for the peak currents that are to be provided to the load. 3.6 Ground (GND) GND is the device return pin. The ground pin(s) should have a low-impedance connection to the bias supply source return. High peak currents will flow out the ground pin(s) when the capacitive load is being discharged. Input B (IN B) IN B is a TTL/CMOS-compatible input that controls OUT B. This input has 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals, as well as providing noise immunity. 3.3 Output B (OUT B) OUT B is a CMOS push-pull output that is capable of sourcing and sinking 3A peaks of current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 1.5A. 2005-2013 Microchip Technology Inc. DS21937B-page 9 TC4423M/TC4424M/TC4425M 4.0 APPLICATIONS INFORMATION VDD = 16V VDD = 16V 1 F WIMA MKS-2 Input 1 F WIMA MKS-2 0.1 F Ceramic Output CL = 1800 pF 1 2 Input TC4424M (1/2 TC4425M) Input: 100 kHz, square wave, tRISE = tFALL 10 ns +5V Input: 100 kHz, square wave, tRISE = tFALL 10 ns +5V 90% Input 0V Output CL = 1800 pF 1 2 TC4423M (1/2 TC4425M) 0.1 F Ceramic 90% Input 10% 16V tD1 tF tD2 0V tR 90% 90% Output 0V FIGURE 4-1: Time. DS21937B-page 10 10% 16V tD1 90% Output 10% 10% Inverting Driver Switching 0V FIGURE 4-2: Switching Time. 10% tR 90% tD2 tF 10% Non-inverting Driver 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead CERDIP (300 mil) XXXXXXXX XXXXXNNN YYWW Legend: XX...X Y YY WW NNN e3 * Note: Example: TC4424 e3 256 MJA^^ 0543 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2005-2013 Microchip Technology Inc. DS21937B-page 11 TC4423M/TC4424M/TC4425M 8-Lead Ceramic Dual In-line - 300 mil (CERDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 2 1 n D E A2 A c L B1 eB B A1 Units Dimension Limits n p Number of Pins Pitch Top to Seating Plane Standoff Shoulder to Shoulder Width Ceramic Pkg. Width Overall Length Tip to Seating Plane Lead Thickness Upper Lead Width Lower Lead Width Overall Row Spacing *Controlling Parameter JEDEC Equivalent: MS-030 A A1 E E1 D L c B1 B eB p MIN .160 .020 .290 .230 .370 .125 .008 .045 .016 .320 INCHES* NOM 8 .100 .180 .030 .305 .265 .385 .163 .012 .055 .018 .360 MAX .200 .040 .320 .300 .400 .200 .015 .065 .020 .400 MILLIMETERS NOM 8 2.54 4.06 4.57 0.51 0.77 7.37 7.75 5.84 6.73 9.40 9.78 3.18 4.13 0.20 0.29 1.14 1.40 0.41 0.46 8.13 9.15 MIN MAX 5.08 1.02 8.13 7.62 10.16 5.08 0.38 1.65 0.51 10.16 Drawing No. C04-010 DS21937B-page 12 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M APPENDIX A: REVISION HISTORY Revision B (January 2013) Added a note to each package outline drawing. Revision A (March 2005) * Original Release of this Document. 2005-2013 Microchip Technology Inc. DS21937B-page 13 TC4423M/TC4424M/TC4425M NOTES: DS21937B-page 14 2005-2013 Microchip Technology Inc. TC4423M/TC4424M/TC4425M PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. XX Device and Temperature Range Package Device: Package: Examples: TC4423M: 3A Dual MOSFET Driver, Inverting, -55C to +125C TC4424M: 3A Dual MOSFET Driver, Non-Inverting, -55C to +125C TC4425M: 3A Dual MOSFET Driver, Complementary, -55C to +125C JA = Ceramic DIP, (300 mil body), 8-lead 2005-2013 Microchip Technology Inc. Confidential a) TC4423MJA: 3A Dual MOSFET Driver, Inverting, -55C to +125C 8LD CERDIP package. a) TC4424MJA: 3A Dual MOSFET Driver, Non-Inverting, -55C to +125C 8LD CERDIP package. a) TC4425MJA: 3A Dual MOSFET Driver, Complementary, -55C to +125C 8LD CERDIP package. DS21937B-page 15 TC4423M/TC4424M/TC4425M NOTES: DS21937B-page 16 Confidential 2005-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769188 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2005-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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