1
MRF448MOTOROLA RF DEVICE DATA
The RF Line
 
  
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
Intermodulation Distortion @ 250 W (PEP) —
IMD = –30 dB (Max)
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 50 Vdc
Collector–Base Voltage VCBO 100 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC16 Adc
Withstand Current — 10 s 20 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD290
1.67 Watts
W/°C
Storage Temperature Range Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.6 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 50 Vdc
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 100 Vdc
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 Vdc
NOTE: (continued)
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
Order this document
by MRF448/D

SEMICONDUCTOR TECHNICAL DATA
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
Motorola, Inc. 1994
MRF448
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 10 Vdc) hFE 10 30
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob 350 450 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA) GPE 12 14 dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA) η
45
65
% (PEP)
% (CW)
Intermodulation Distortion (2)
(VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz) IMD 33 30 dB
Electrical Ruggedness
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz,
VSWR 3:1 at all Phase Angles)
ψNo Degradation in Output Power
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
Figure 1. 30 MHz Test Circuit Schematic
C1, C2, C5, C7 — 170780 pF, Arco 469
C3, C8, C9 — 0.1 µF, 100 V Erie
C4 — 500 µF @ 6.0 V
C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel
C10 — 10 µF, 100 V
R1 — 10 , 10 Watt
R2 — 10 , 1.0 Watt
CR1 — 1N4997 or equivalent
L1 — 3 Turns, #16 Wire, 0.4 I.D., 0.3 Long
L2 — 0.8 µH, Ohmite Z–235 or equivalent
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25 I.D.
L4 — 4 Turns, 1/8 Copper Tubing, 0.6 I.D., 1.0 Long
L5, L6 — 2.0 µH, Fair–Rite 2643021801 Ferrite bead each or equivalent
BIAS
+
RF
INPUT
RF
OUTPUT
50 Vdc
+
R1
C3 C4 +
CR1
C1
C2
L1
R2
L2 D.U.T.
L3
C5
L4
C8 C9 C10
+
L5 L6
C6
C7
3
MRF448MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage
Figure 4. Power Gain versus Frequency Figure 5. RF SOAR (Class AB)
Pout versus Output VSWR
Figure 6. fT versus Collector Current Figure 7. IMD versus Pout
P , OUTPUT POWER (WATTS CW)
out
Pin, INPUT POWER (WATTS)
f = 30 MHz
ICQ = 250 mA
40 V
300
200
04 8
400
100
0 12 16 20
P , OUTPUT POWER (WATTS PEP)
out
VCC, SUPPLY VOLTAGE (VOLTS)
300
200
030
400
100
20 40 50 60
f = 30, 30.001 MHz
ICQ = 250 mA
IMD = d3
35 dB
IMD = –30 dB
f, FREQUENCY (MHz)
2
VCC = 50 V
ICQ = 250 mA
Pout = 250 W
20
10
25
15
04 7 15 30
5
10
GPE, POWER GAIN (dB)
1OUTPUT VSWR
3
250
200
150
350
300
5 10 30 50
f = 30 MHz
ICQ = 250 mA
VCC = 50 V
TC = 50
°
C
100
°
C
P , OUTPUT POWER (WATTS CW)
out
400
f (MHz)
T
5
IC, COLLECTOR CURRENT (AMPS)
250
200
150
100
50
10 15
VCC = 30 V
15 V
0 20
0
IMD, INTERMODULATION DISTORTION (dB)
Pout, OUTPUT POWER (WATTS PEP)
25
25
30
35
40
45
50 75
d3
d5
VCC = 50 V
f = 30, 30.001 MHz
125 175 225 275
VCC = 50 V
MRF448
4MOTOROLA RF DEVICE DATA
Figure 8. Output Resistance and Capacitance
versus Frequency
Figure 9. Series Equivalent Impedance
1.5 f, FREQUENCY (MHz)
2 4 7 10 3015
20 VCC = 50 V
ICQ = 250 mA
Pout = 250 W PEP
5000
CP
RP
16
12
8
4
020
4000
3000
2000
1000
0
Rout, PARALLEL EQUIVALENT OUTPUT
RESISTANCE (OHMS)
Cout, PARALLEL EQUIVALENT OUTPUT
CAPACITANCE (pF)
7.0
f = 2.0 MHz
15
30
Zo = 10
4.0
VCC = 50 V
ICQ = 150 mA
Pout = 250 W PEP
f
MHz Zin
Ohms
2.0
4.0
7.0
15
30
4.50 – j1.40
3.10 – j1.80
1.70 – j1.75
0.80 – j1.25
0.60 – j0.75
5
MRF448MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 211–11
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
A
UM
M
Q
RB
1
4
32
D
K
E
SEATING
PLANE
C
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.960 0.990 24.39 25.14
B0.465 0.510 11.82 12.95
C0.229 0.275 5.82 6.98
D0.216 0.235 5.49 5.96
E0.084 0.110 2.14 2.79
H0.144 0.178 3.66 4.52
J0.003 0.007 0.08 0.17
K0.435 ––– 11.05 –––
M45 NOM 45 NOM
Q0.115 0.130 2.93 3.30
R0.246 0.255 6.25 6.47
U0.720 0.730 18.29 18.54
_ _
MRF448
6MOTOROLA RF DEVICE DATA
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MRF448/D
*MRF448/D*