G E SOLID STATE OL def 3a7soa, oo17099 7 T-Us- / 3875081 G E SOLID STATE O1E 17699 D TrtS- (FT Silicon Controlled Rectifiers File Number 892 2N64002N6404 16-A Silicon Controlled TERMINAL DESIGNATIONS Rectifiers GATE For Power Switching, Power Control, and oe _t Ignition Applications (FLANGED "| O i ANODE Features: CATHODE High dv/dt capability TOP VIEW sce . " Low thermal resistance s2es-3 : = Low on-state voltage at high current leveis = Ow on 9 g JEDEC TO-220AB i g i The RCA-2N6400 to 2N6404, inclusive, are all-diffused sit- The TO-220AB package provides easy package mounting . icon conirolied rectifiers (reverse-btocking triode thyris- and low thermal resistance, allowing operation at high case tors) designed for switching ac and de currents. temperatures and permitting reduced heat-sink size. MAXIMUM RATINGS, Absolute-Maximum Valves: 2N6400 2N6401 2N6402 2N6403 2N6404 75 125 250 450 650 Vv 76 125 250 450 650 v 50 100 200 400 600 Vv 50 100 200 400 600 v lriams: (Te = 100C, @ = 180) 16 A lism! For one full cycle of applied principal *voltage CO-Hzt oo... eee cece cece ere ceteeneeseeee 160 A . BOHzE oo. cece cece eee aneeneeenenerterees 138 A k For more than one full cycte of applied ' principal voltage........2 cee cece ees eeeesatene SS Fig. 4 | di/dt: 5 Vb = Vorom, tar = 80 mA, tr = 0.1 #s (See Fig. 13)... 100 Alus Wt: | Ty = -40 to 125C, t= 1108.38 MS ......- cece ewes 100 A2s Pon: Peak forward for 10us max. - 16# Ww Peak reverse ... cc cc cec cece n ence rerecuneeecaceees S88 Fig. 7 i *Pauvil: t Averaging time = 8 ms maximum Bees 0.5 Ww lon: (forward) ...---. 222s c eee eee ence nee . 2 A -40to150 OS -40to125_ Ot During soldering for 10 s maximum } (terminal and Case) ........eseceecenseesceeues 260 C * Inaccordance with JEDEC registration data format (JS-22, RDF-1) filed for the JEDEC (2N series) types. + These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. $ At Inmus: = 16 A and Te = 100C. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted. # JEDEC registered value is 10 W. } 705 1242 _ E-05 Se ee een te ee eeG E SOLID STATE o1 def 3a7soa. ooiz7oo 0 3875081 G E SOLID STATE Silicon Controlled Rectifiers o1 17700 oT 25/5 2N64002N6404 ELECTRICAL CHARACTERISTICS As Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (Te) LIMITS CHARACTERISTIC FOR ALL TYPES UNITS MIN. | TYP. | MAX. 'pom o from: Vp = VpRoM oF VR = VRROM- Te= 125C - 0.1 2* mA VT: it = 32 A (peak), To = 25C (See Fig. 5)..--e+eee | 14 1,.7* Vv ino: (See Fig, 10) T= 2B eee cece ee ee rene renee es veel o 10 36 T= MOO vee eeee cease eneeeeertee tens }- | = | soe mA dv/dt: . Vp = VpROM- exponential voltage rise, Tc = 125C (See Fig. 13) 0... eee eee ee er eee 50 - - Vis lot: (See Fig. 8) Vp = 12 V (de), Ry = 50 9, Te = 2506 .... ++ - 8 | 30 mA . Vp = 12 V (de), Ry = 50 2, Te = 40C... oo - 60* Vat: (See Fig. 9) Vp = 12 V (de), Ry = 50 2, Te = 250C .... sees - 0.7 1.5 Vv Vp = 12 V (de), Ry = 50 2, Te = 40C... + 7 - | 25* VGRD: Vp = VpROM: Tc = 125C ecu etecenneeneneees 0.2 - - Vv tot: Vo = Vorom. it = 32 A (peak), IGT = 200 mA, t, = 0.02 us, Te = 25C (See Figs. 18 & 14) .-...-- - - 2* Us tq: Rectangular Pulse i Vo = VpROM- it = 16 A, pulse duration = 50 us, am dv/dt = 50 V/us, di/dt = 10A/us, {gy = 80 mA at turn-on, Vg = 20 V minimum, VgK = 9 V at turn-off, Tc = 75C (See Fig. 16)... +--+ +--+ - 35 75 ws i Rojo -- +--+ vee cgaceeusteeuaeeeness veseeeee bom | 16" { 0 i Rogar ccecweeeeeeeeeeees eaneee be eereeeeraee - - 50* CW * tn accordance with JEDEC registration data format (US-22, RDF-1) filed for the JEDEC (2N series) types. 706 1243 E-06G E SOLID STATE 01 pe sa7soas ooiz701 a 3875081 GE SOLID STATE DIE 17701 ZS IS 2N64002N6404 I e & 2 & & a g 2 fr g a zB @ no i z ON- STATE CURRENT [Typms} Tr(poye OR Trrayy] A 3 9205-26600 Fig. 1 On-state power dissipation vs. on-state current. ON-STATE CURRENT [Ty1msy Ty oe)e OF Tr taviJA [Frimmsy Frene)s OF Fr avid esa ON-STATE CURRENT [Z1(RMS) ZT(0C)+OR Zr(avi] Schsane0 Fig. 2 - Maximum allowable case temperature vs. $ on-state current. P Fig. 8 Maximum allowable ambient temperature vs. on-state current no heat sinking. ae eerie (Tel 100% RMS CURRENT [I7{RMS)] <t6A OVERLOAD MAY NOT BE REPEATED { 3 ; b SURGE CURRENT DURATION-FULL CYCLES sece-zeaos INSTANTANEOUS ON-STATE VOLTAGE (v7)- Fig. 4 Allowable peak surge on-state current vs, seee-aeecs surge duration. Fig. 5 Instantaneous on-state currant vs. instantaneous on-state voltage. 707 1244 E-C7 -G SOLID STATE 3875081 G E& SOLID STATE Silicon Controlled Rectiflers o1 deff 3a7so81 ooizo2 3 ote 177020 DO T*25/85 2N64002N6404 708 DC GATE TRIGGER CURRENT CASE TEMPERATURE (Te) C 9265-26793 Fig. 6 DC gate trigger current vs. case temperature. INSTANTANEOUS HOLDING CURRENT {iqo)mA Fig. 8 instantaneous holding current vs. case temperature. GATE CONTROLLED TURN- ON-TIME (tgj)-ys too 200 300 DC GATE TRIGGER CURRENT (IgpI-A = 92526797 Fig. 10 Typical gate-controlied turn-on time vs. gate trigger current. i t g ui Oo z 2 ao > ae we oO eg z= & w < 3 2 a CASE TEMPERATURE {To) C 92cs-26799 Fig. 7 DG gate trigger voltage vs. case temperature. VOLTAGE (dv/dt h- V/ps CRITICAL RATE-OF-RISE OF OFF-STATE 125 sO 75 \0o CASE TEMPERATURE (T. )C S2cS- 26796 Fig, 9 Critical rate of rise of off-state voltage vs. case temperature. , Fig. 11 Rate of change of on-state current with time (defining di/dt). . 1245 E-08G E SOLID STATE O1 pe ff sazsoa1 QOu77043 5 i 3875081 G E SOLID STATE O1E 17703 DBD Fe#ZS-IS Silicon Controlled Rectifiers 2N64002N6404 tot = td + te CRITICAL dv/dt NY 1eARC 92S-13365R3 Fig. 12 Relationship between off-state voltage, Fig. 13 Rate of rise of aff-state voltage with on-state current, and gate-trigger volt- time (defining critical dv/dt). age showing reference points for defi- nition of turn-on time (ta). { tm avai Vooura = l [ j 80% faa = Aft t I aol beter 1 - k}+1, 4 | i! 9755-388! Fig. 14 - Relationship between instantaneous on-state current and voltage, showing reference points for definition of circuit-commutated turn-off time (ty). : 709 1246 E-09