MITSUBISHI LASER DIODES
ML9xx19 SERIES
2.5Gbps
InGaAsP DFB LASER DIODES
TYPE
NAME ML925B19F
DESCRIPTION
ML9XX19 series are uncooled DFB (Distributed Feedback) laser diodes for
2.5Gbps transmission emitting light beam with wavelength of 1470~1610nm.
λ/4
shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx19 can operate
in the wide temperature range from 0oC to 70 oC
without any temperature
control.
They are well suited for light source in long distance digital
transmission application of coarse WDM.
FEATURES
nλ/4 phase shifted grating structure
nWide temperature range operation
(0 oC to 70 oC)
nHigh side-mode-suppression-ratio(typical 45dB)
nHigh resonance frequency(typical 11GHz)
APPLICATION
n2.5Gbps long-reach transmission
nCoarse WDM application
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Light output power CW 6 mW
IF Laser forward current - 200 mA
VRL Laser reverse voltage - 2 V
IRD PD forward current - 2 mA
VRD PD reverse voltage - 20 oC
Tc Operation temperature - 0 to +70 oC
Tstg Storage temperature - -40 to +100 oC
ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25
o
C)
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
CW --- 15 30
Ith Threshold current CW,Tc=70 oC --- 35 50 mA
CW, Po=5mW,Tc=70 oC --- 40 60
Iop Operation current CW, Po=5mW --- 70 100
mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.8 V
λp Peak wavelength CW, Po=5mW <* , **> nm
η Slope efficiency CW, Po=5mW 0.15
0.20
--- mW/mA
θ// Beam divergence angle
(Parallel) <1>
CW, Po=5mW --- 25 40 deg.
θ⊥ Beam divergence angle
(Perpendicular) <1>
CW, Po=5mW --- 30 47 deg.
SMSR
Side Mode suppression ratio CW, Po=5mW, Tc=0 ~ 70 oC 35 45 --- dB
tr,tf Rise and Fall time (10%-90%) 2.48832Gbps, Ibias=Ith
short lead-pin --- 100
150
psec
fr Resonance frequency 2.48832Gbps,Ibias=Ith,Ipp=40mA
--- 11 --- dB
Im Monitor Current (PD) CW, Po=5mW, VRD=1V, 0.1 --- 2.0 mA
Id Dark Current (PD) VRD=5V --- --- 1.0 µA
Ct Capacitance (PD) VRD=5V, f=1MHz --- 10 20 pF
Note : <1> Exclude back facet reflection from a monitor PD
MITSUBISHI
ELECTRIC Jun. 2002
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI LASER DIODES
ML9xx19 SERIES
2.5Gbps InGaAsP DFB LASER DIODES
<*> Pea
k Wavelength
Limits Unit
Type Symbol Test Condition Min. Typ. Max.
ML925B19F-04 1467 1470 1473
ML925B19F-05 1487 1490 1493
ML925B19F-06 1507 1510 1513
ML925B19F-07 1527 1530 1533
ML925B19F-08 1547 1550 1553
ML925B19F-09 1567 1570 1573
ML925B19F-10 1587 1590 1593
ML925B19F-11
λp CW
Po=5mW
Tc=25oC
1607 1610 1613
nm
<*> Peak Wavelength Limits Unit
Type Symbol Test Condition Min. Typ. Max.
ML925B19F-12 1468 1470 1472
ML925B19F-13 1488 1490 1492
ML925B19F-14 1508 1510 1512
ML925B19F-15 1528 1530 1532
ML925B19F-16 1548 1550 1552
ML925B19F-17 1568 1570 1572
ML925B19F-18 1588 1590 1592
ML925B19F-19
λp CW
Po=5mW
Tc=25oC
1608 1610 1612
nm
MITSUBISHI
ELECTRIC Jun. 2002
OUTLINE DRAWINGS
ML925B19F
(1)
φ1.0Min.
φ2.0Min.
φ3.55±0.1
φ5.6+0
-0.03
1.27
0.25±0.03
(Glass)
18±12.1±0.15
1.2
±0.1
4-φ0.45±0.05
(2)
1±0.1
2-90º
φ2.0±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1)(2)
(Dimension:mm)
±0.03
LDPD
(3)
(2) (1)
(4)
Case
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
