MITSUBISHI LASER DIODES PRELIMINARY ML9xx19 SERIES Notice: This is not a final specification. Some parametric limits are subject to change. 2.5Gbps InGaAsP DFB LASER DIODES TYPE NAME ML925B19F DESCRIPTION FEATURES ML9XX19 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam with wavelength of 1470~1610nm. /4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML9xx19 can operate in the wide temperature range from 0o C to 70 o C without any temperature control. They are well suited for light source in long distance digital transmission application of coarse WDM. n/4 phase shifted grating structure temperature range operation nWide (0 o C to 70 o C) nHigh side-mode-suppression-ratio(typical 45dB) nHigh resonance frequency(typical 11GHz) APPLICATION n2.5Gbps long-reach transmission nCoarse WDM application ABSOLUTE MAXIMUM RATINGS Symbol Po IF VRL IRD VRD Tc Tstg Parameter Light output power Laser forward current Laser reverse voltage PD forward current PD reverse voltage Operation temperature Storage temperature Conditions CW - Ratings 6 200 2 2 20 0 to +70 -40 to +100 Unit mW mA V mA o C o C o C ELECTRICAL/OPTICAL CHARACTERISTICS(Tc=25o C) Symbol Parameter Ith Threshold current Iop Operation current Vop p // SMSR Operating voltage Peak wavelength Slope efficiency Beam divergence angle (Parallel) <1> Beam divergence angle (Perpendicular) <1> Side Mode suppression ratio tr,tf Rise and Fall time (10%-90%) fr Im Id Ct Resonance frequency Monitor Current (PD) Dark Current (PD) Capacitance (PD) Test Conditions Min. CW CW,Tc=70 o C CW, Po=5mW,Tc=70 o C CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW ----------- Typ. 15 35 40 70 1.1 <* , **> 0.15 0.20 CW, Po=5mW CW, Po=5mW o CW, Po=5mW, Tc=0 ~ 70 C 2.48832Gbps, Ibias=Ith short lead-pin 2.48832Gbps,Ibias=Ith,Ipp=40mA CW, Po=5mW, VRD=1V, VRD=5V VRD=5V, f=1MHz Max. 30 50 60 100 1.8 Unit mA mA --- V nm mW/mA --- 25 40 deg. --- 30 47 deg. 35 45 --- dB --- 100 150 psec --0.1 ----- 11 ----10 --2.0 1.0 20 dB mA A pF Note : <1> Exclude back facet reflection from a monitor PD MITSUBISHI ELECTRIC Jun. 2002 MITSUBISHI LASER DIODES PRELIMINARY ML9xx19 SERIES Notice: This is not a final specification. Some parametric limits are subject to change. 2.5Gbps InGaAsP DFB LASER DIODES <*> Peak Wavelength Type Symbol Test Condition ML925B19F-04 ML925B19F-05 ML925B19F-06 ML925B19F-07 ML925B19F-08 ML925B19F-09 ML925B19F-10 ML925B19F-11 p CW Po=5mW Tc=25 o C Type Symbol Test Condition ML925B19F-12 ML925B19F-13 ML925B19F-14 ML925B19F-15 ML925B19F-16 ML925B19F-17 ML925B19F-18 ML925B19F-19 p CW Po=5mW Tc=25 o C Min. 1467 1487 1507 1527 1547 1567 1587 1607 Limits Typ. 1470 1490 1510 1530 1550 1570 1590 1610 Max. 1473 1493 1513 1533 1553 1573 1593 1613 Unit Min. 1468 1488 1508 1528 1548 1568 1588 1608 Limits Typ. 1470 1490 1510 1530 1550 1570 1590 1610 Max. 1472 1492 1512 1532 1552 1572 1592 1612 nm <*> Peak Wavelength Unit nm OUTLINE DRAWINGS ML925B19F (Dimension:mm) 5.6 +0 -0.03 4.25 3.550.1 (0.25) 2-90 (3) (4) (1) Case (0.25) (4) PD LD 2.0Min. 1.0Min. 0.1 2.10.15 1.2 1.27 0.03 0.250.03 (Glass) 10.1 18 1 (3) (2) 2.00.25 (P.C.D.) Emitting Facet (2) (1) Reference Plane 4- 0.450.05 (1) (2) MITSUBISHI ELECTRIC Jun. 2002