SPD18P06P - Infineon Technologies

1999-11-22

Page 1

SPD18P06P

SPU18P06P

Preliminary data

SIPMOS Power-Transistor

Features

·

P-Channel

·

Enhancement mode

·

Avalanche rated

·

d

v

/d

t

rated

·

175°C operating temperature

Product Summary

Drain source voltage V

V

DS -60

Drain-source on-state resistance

R

DS(on) 0.13

W

Continuous drain current A

I

D-18.6

Type Package Ordering Code

SPD18P06P P-TO252 Q67040-S4189

SPU18P06P P-TO251 Q67040-S4192

Pin 1 PIN 2/4 PIN 3

G D S

Maximum Ratings,at

T

j = 25 °C, unless otherwise specified

Parameter Symbol UnitValue

-18.6

-13.2

Continuous drain current

T

C = 25 °C

T

C = 100 °C

A

I

D

Pulsed drain current

T

C = 25 °C

I

D puls -74.4

Avalanche energy, single pulse

I

D = -18.6 A ,

V

DD = -25 V,

R

GS = 25

W

150 mJ

E

AS

Avalanche energy, periodic limited by

T

jmax

E

AR 8

d

v

/d

t

6Reverse diode d

v

/d

t

I

S = -18.6 A,

V

DS = -48 V, d

i

/d

t

= 200 A/µs,

T

jmax = 175 °C

kV/µs

Gate source voltage

V

GS ±20 V

Power dissipation

T

C = 25 °C

P

tot 80 W

Operating and storage temperature

T

j ,

T

stg -55...+175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

1999-11-22

Page 2

SPD18P06P

SPU18P06P

Preliminary data

Thermal Characteristics

Parameter Symbol UnitValues

min. max.typ.

Characteristics

R

thJC - 1.85-Thermal resistance, junction - case K/W

- 100

R

thJA

Thermal resistance, junction - ambient, leaded -

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

R

thJA

-

75

50

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = -250 µA

V

(BR)DSS -60 - V-

Gate threshold voltage,

V

GS =

V

DS

I

D = -1 mA -2.1 -3 -4

V

GS(th)

Zero gate voltage drain current

V

DS = -60 V,

V

GS = 0 V,

T

j = 25 °C

V

DS = -60 V,

V

GS = 0 V,

T

j = 150 °C

µA

-1

-100

I

DSS

-0.1

-10

-

I

GSS - -10 -100Gate-source leakage current

V

GS = -20 V,

V

DS = 0 V nA

Drain-source on-state resistance

V

GS = -10 V,

I

D = -13.2 A

R

DS(on) - 0.1 0.13

W

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

1999-11-22

Page 3

SPD18P06P

SPU18P06P

Preliminary data

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

³

2*

I

D*

R

DS(on)max ,

I

D = -13.2 A 4

g

fs S-8

Input capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

iss 690 860 pF-

C

oss - 290230Output capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

Reverse transfer capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz 12095

C

rss -

Turn-on delay time

V

DD = -30 V,

V

GS = -10 V,

I

D = -13.2 A,

R

G = 2.7

W

- 18 ns12

t

d(on)

Rise time

V

DD = -30 V,

V

GS = -10 V,

I

D = -13.2 A,

R

G = 2.7

W

t

r- 8.75.8

24.5 37

t

d(off)

Turn-off delay time

V

DD = -30 V,

V

GS = -10 V,

I

D = -13.2 A,

R

G = 2.7

W

-

Fall time

V

DD = -30 V,

V

GS = -10 V,

I

D = -13.2 A,

R

G = 2.7

W

t

f- 11 16.5

1999-11-22

Page 4

SPD18P06P

SPU18P06P

Preliminary data

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

UnitValuesSymbolParameter

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = -48 ,

I

D = -18.6 A -

Q

gs nC6.64.4

Gate to drain charge

V

DD = -48 V,

I

D = -18.6 A

Q

gd 9.3 14-

33-

Q

g

Gate charge total

V

DD = -48 V,

I

D = -18.6 ,

V

GS = 0 to -10 V 22

Gate plateau voltage

V

DD = -48 ,

I

D = -18.6 A

V

(plateau) - -5.56 - V

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

C = 25 °C

I

S- - -18.6 A

Inverse diode direct current,pulsed

T

C = 25 °C

I

SM - - -74.4

Inverse diode forward voltage

V

GS = 0 V,

I

F = -18.6 A

V

SD - -1 -1.33 V

Reverse recovery time

V

R = -30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs

t

rr - 70 105 ns

Reverse recovery charge

V

R = -30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs

Q

rr - 139 208 nC

1999-11-22

Page 5

SPD18P06P

SPU18P06P

Preliminary data

Drain current

I

D =

f

(

T

C)

parameter:

V

GS

³

10 V

0 20 40 60 80 100 120 140 160°C 190

T

C

0

-2

-4

-6

-8

-10

-12

-14

-16

A

-20

SPD18P06P

I

D

Power dissipation

P

tot =

f

(

T

C)

0 20 40 60 80 100 120 140 160°C 190

T

C

0

10

20

30

40

50

60

70

W

90

SPD18P06P

P

tot

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

t

p

-4

10

-3

10

-2

10

-1

10

0

10

1

10

K/W

SPD18P06P

Z

thJC

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D =

f

(

V

DS )

parameter :

D

= 0 ,

T

C = 25 °C

-10 -1 -10 0 -10 1 -10 2

V

DS

0

-10

1

-10

2

-10

A

SPD18P06P

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

t

p = 29.0µs

1999-11-22

Page 6

SPD18P06P

SPU18P06P

Preliminary data

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0 -4 -8 -12 -16 -20 -24 -28 -32 A-38

I

D

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

0.36

W

0.42

SPD18P06P

R

DS(on)

a

V

GS [V] =

a

-4.0

b

-4.5

c

-5.0

d

-5.5

e

-6.0

f

-6.5

g

-7.0

h

-7.5

i

-8.0

j

-9.0

k

-10.0

l

-20.0

Typ. output characteristic

I

D =

f

(

V

DS);

T

j=25°C

parameter:

t

p = 80 µs

0 -1 -2 -3 -4 -5 -6 -7 -8 V-10

V

DS

0

-5

-10

-15

-20

-25

-30

-35

-40

A

-50

SPD18P06P

I

D

V

GS [V]

a

a -4.0

b

b -4.5

c

c -5.0

d

d -5.5

e

e -6.0

f

f -6.5

g

g -7.0

h

h -7.5

i

i -8.0

j

j -9.0

k

k -10.0

l

P

tot = 80.00W

l -20.0

Typ. transfer characteristics

I

D=

f

(

V

GS )

V

DS

³

2 x

I

D x

R

DS(on)max

parameter:

t

p = 80 µs

0 -1 -2 -3 -4 -5 -6 -7 -8 V-10

V

GS

0

-5

-10

-15

-20

-25

-30

A

-40

I

D

Typ. forward transconductance

g

fs = f(

I

D);

T

j=25°C

parameter:

g

fs

0 -5 -10 -15 -20 A-30

I

D

0

1

2

3

4

5

6

7

8

S

10

g

fs

1999-11-22

Page 7

SPD18P06P

SPU18P06P

Preliminary data

Drain-source on-state resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = -13.2 A,

V

GS = -10 V

-60 -20 20 60 100 140 °C 200

T

j

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

W

0.38

SPD18P06P

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = -1 mA

-60 -20 20 60 100 140 V200

T

j

0.0

-0.4

-0.8

-1.2

-1.6

-2.0

-2.4

-2.8

-3.2

-3.6

-4.0

-4.4

V

-5.0

V

GS(th)

min

typ

max

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS=0V,

f

=1 MHz

0 -5 -10 -15 -20 -25 V-35

V

DS

1

10

2

10

3

10

4

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0

V

SD

-1

-10

0

-10

1

-10

2

-10

A

SPD18P06P

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 175 °C typ

T

j = 175 °C (98%)

1999-11-22

Page 8

SPD18P06P

SPU18P06P

Preliminary data

Avalanche energy

E

AS =

f

(

T

j)

para.:

I

D = -18.6 A ,

V

DD = -25 V,

R

GS = 25

25 45 65 85 105 125 145 °C 185

T

j

0

20

40

60

80

100

120

mJ

160

E

AS

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D = -18.6 A pulsed

0 4 8 12 16 20 24 28 nC 34

Q

Gate

0

-2

-4

-6

-8

-10

-12

V

-16

SPD18P06P

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS =

f

(

T

j)

-60 -20 20 60 100 140 °C 200

T

j

-54

-56

-58

-60

-62

-64

-66

-68

V

-72

SPD18P06P

V

(BR)DSS

1999-11-22

Page 9

SPD18P06P

SPU18P06P

Preliminary data

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest

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Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device

or system Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

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