Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor FEATURES BSP100 SYMBOL * 'Trench' technology * Low on-state resistance * Fast switching * High thermal cycling performance * Low thermal resistance QUICK REFERENCE DATA VDSS = 30 V d ID = 6 A RDS(ON) 100 m (VGS = 10 V) g RDS(ON) 200 m (VGS = 4.5 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology. Applications:* Motor and relay drivers * d.c. to d.c. converters * Logic level translator PINNING SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain (tab) 4 2 1 3 The BSP100 is supplied in the SOT223 surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current IDM PD Tj, Tstg Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS MIN. MAX. UNIT Tj = 25 C to 150C Tj = 25 C to 150C; RGS = 20 k - 65 30 30 20 61 4.4 3.2 24 8.3 150 V V V A A A A W C Tsp = 25 C Tsp = 100 C Tamb = 25 C Tsp = 25 C Tsp = 25 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-sp Thermal resistance junction to solder point Thermal resistance junction to ambient surface mounted, FR4 board surface mounted, FR4 board Rth j-amb TYP. MAX. UNIT 12 15 K/W 70 - K/W 1 Continuous current rating limited by package February 1999 1 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy IAS Non-repetitive avalanche current CONDITIONS MIN. MAX. UNIT - 23 mJ - 6 A Unclamped inductive load, IAS = 6 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 15 V; RGS = 50 ; VGS = 10 V ELECTRICAL CHARACTERISTICS Tj= 25C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS VGS = 0 V; ID = 10 A; VGS(TO) Drain-source breakdown voltage Gate threshold voltage MIN. Tj = -55C VDS = VGS; ID = 1 mA Tj = 150C Tj = -55C RDS(ON) 2 80 120 4.5 10 0.6 10 2.8 3.2 100 200 170 100 10 100 V V V V V m m m S A A nA A nA IGSS VGS = 10 V; ID = 2.2 A VGS = 4.5 V; ID = 1 A VGS = 10 V; ID = 2.2 A; Tj = 150C Forward transconductance VDS = 20 V; ID = 2.2 A On-state drain current VGS = 10 V; VDS = 1 V; VGS = 4.5 V; VDS = 5 V Zero gate voltage drain VDS = 24 V; VGS = 0 V; current VDS = 24 V; VGS = 0 V; Tj = 150C Gate source leakage current VGS = 20 V; VDS = 0 V Qg(tot) Qgs Qgd Total gate charge Gate-source charge Gate-drain (Miller) charge ID = 2.3 A; VDD = 15 V; VGS = 10 V - 6 0.7 0.7 - nC nC nC td on tr td off tf Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time VDD = 20 V; RD = 18 ; VGS = 10 V; RG = 6 Resistive load - 6 8 21 15 - ns ns ns ns Ld Ls Internal drain inductance Internal source inductance Measured tab to centre of die Measured from source lead to source bond pad - 2.5 5 - nH nH Ciss Coss Crss Input capacitance Output capacitance Feedback capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz - 250 88 54 - pF pF pF gfs ID(ON) IDSS Drain-source on-state resistance 30 27 1 0.4 2 3.5 2 - TYP. MAX. UNIT February 1999 2 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25C unless otherwise specified SYMBOL PARAMETER CONDITIONS Tsp = 25 C VSD Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage trr Qrr Reverse recovery time Reverse recovery charge IS ISM TYP. MAX. UNIT - - 6 A - - 24 A IF = 1.25 A; VGS = 0 V - 0.82 1.2 V IF = 1.25 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 25 V - 69 55 - ns nC Normalised Power Derating PD% 120 110 100 90 80 70 60 50 40 30 20 10 0 MIN. 100 BSP100 Peak Pulsed Drain Current, IDM (A) RDS(on) = VDS/ ID tp = 10 us 10 100 us 1 ms d.c. 1 10 ms 100 ms 0.1 0 20 40 60 80 Tsp / C 100 120 140 1 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tsp) 120 110 100 90 80 70 60 50 40 30 20 10 0 10 Drain-Source Voltage, VDS (V) 100 Fig.3. Safe operating area. Tsp = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Normalised Current Derating ID% 100 10 BSP100 Peak Pulsed Drain Current, IDM (A) D = 0.5 0.2 0.1 1 P D 0.05 0.1 tp 0.02 single pulse 0.01 1E-06 0 20 40 60 80 100 Tsp / C 120 140 1E-05 1E-04 T 1E-03 1E-02 1E-01 1E+00 1E+01 Pulse width, tp (s) Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tsp); conditions: VGS 10 V February 1999 D = tp/T Fig.4. Transient thermal impedance. Zth j-sp = f(t); parameter D = tp/T 3 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 Transconductance, gfs (S) 6 Drain Current, ID (A) 10 VGS = 20 V 9 8 10 V 5 5V Tj = 25 C 4 Tj = 25 C 7 150 C 6 4.2 V 5 4V 4 3 2 3.8 V 3.6 V 3.4 V 3.2 V 3 2 1 1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Drain-Source Voltage, VDS (V) 1.8 0 2 Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS 0.5 3.6 V 3.8V 4V 2 4.2 V 2 3 4 5 6 7 Drain current, ID (A) 8 9 10 Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID) ; parameter Tj Drain-Source On Resistance, RDS(on) (Ohms) 3.2 V 1 a SOT223 30V Trench Normalised RDS(ON) = f(Tj) Tj = 25 C 3.4 V 0.4 1.5 0.3 1 0.2 VGS =5 V 10V 0.1 0.5 20V 0 0 1 2 3 4 5 6 Drain Current, ID (A) 7 8 9 0 -50 10 Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS 0 50 Tj / C 100 150 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj) VGS(TO) / V Drain current, ID (A) 10 4 VDS > ID X RDS(ON) 9 8 7 3 Tj = 25 C 6 max. 150 C 5 typ. 2 4 3 2 min. 1 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 -60 -40 -20 Gate-source voltage, VGS (V) Fig.7. Typical transfer characteristics. ID = f(VGS); parameter Tj February 1999 0 20 40 60 Tj / C 80 100 120 140 Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS 4 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 Sub-Threshold Conduction 1E-01 Source-Drain Diode Current, IF (A) 10 9 1E-02 VGS = 0 V 8 7 min 1E-03 typ 6 max 150 C 5 Tj = 25 C 4 1E-04 3 2 1 1E-05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1E-06 0 1 2 3 4 Drain-Source Voltage, VSDS (V) 5 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Non-repetitive Avalanche current, IAS (A) BSP100 10 Capacitances, Ciss, Coss, Crss (pF) 1000 25 C Tj prior to avalanche =125 C Ciss 1 100 VDS Coss tp Crss ID 0.1 1E-06 10 0.1 1 10 Drain-Source Voltage, VDS (V) 100 1E-05 1E-04 1E-03 1E-02 Avalanche time, tp (s) Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tp); unclamped inductive load Gate-source voltage, VGS (V) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 ID = 2.3A Tj = 25 C VDD = 15 V 0 1 2 3 4 5 6 7 Gate charge, QG (nC) 8 9 10 Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); parameter VDS February 1999 5 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 PRINTED CIRCUIT BOARD Dimensions in mm. 36 18 60 4.5 4.6 9 10 7 15 50 Fig.16. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick). February 1999 6 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 MECHANICAL DATA Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 OUTLINE VERSION e 4.6 e1 HE Lp Q v w y 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 96-11-11 97-02-28 SOT223 Fig.17. SOT223 surface mounting package. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to Discrete Semiconductor Packages, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". February 1999 7 Rev 1.000 Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor BSP100 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 8 Rev 1.000