
DB92163m-AAS/A2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.65 VIF = 50mA
Reverse Voltage (VR)6VIR = 10µA
Reverse Current (IR)10 µAVR = 6V
Output Collector-emitter Breakdown (BVCEO)
IS5, ISD5, ISQ5 70 VIC = 1mA
IS1, ISD1, ISQ1, IS74, ISD74, ISQ74 50 V( Note 2)
Emitter-collector Breakdown (BVECO)6VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
IS1, ISD1, ISQ1 20 300 %10mA IF , 10V VCE
IS5, ISD5, ISQ5 50 400 %10mA IF , 10V VCE
IS74, ISD74, ISQ74 12.5 %16mA IF , 5V VCE
Saturated Current Transfer Ratio
IS1, ISD1, ISQ1 75 %10mA IF , 0.4V VCE
IS5, ISD5, ISQ5 100 %10mA IF , 0.4V VCE
IS74, ISD74, ISQ74 12.5 %16mA IF , 0.5V VCE
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
Input to Output Isolation Voltage VISO 7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time tr 2.6 µsIF = 5mA
Output Fall Time tf 2.2 µsVCC = 5V, RL = 75Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
IS5, ISD5, ISQ5 70V
IS1,ISD1,ISQ1,IS74,ISD74,ISQ74 50V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )