83002TN (KT)/71598HA (KT)/10996TS (KOTO) X-6063/3237KI/3075KI/1114KI, MT No.1390-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display
Video Output Applications
Ordering number:ENN1390D
2SA1353/2SC3417
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1353
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2009B [2SA1353/2SC3417]
Applications
· Ultrahigh-definition CRT display.
· Color TV chroma output, high-voltage driver appli-
cations.
Features
· High breakdown voltage : VCEO≤300V.
· Excellent high frequency characteristics :
Cre=1.8pF(typ).
· Adoption of MBIT process.
1 :Emitter
2 : Collector
3 : Base
SANYO : TO-126
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 003)–(V
egatloVrettimE-ot-rotcelloCV
OEC 003)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C001)–(Am
)esluP(tnerruCrotcelloCI
PC 002)–(Am
noitapissiDrotcelloCP
C2.1W
7W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
˚C
˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V002)–(= E0=1.0)–(Aµ
tnerruCffotuC
rettimEI
OBE VBE I,V4)–(= C0=1.0)–(Aµ
niaGtnerruCCD hEF VEC I,V01)–(= CAm01)–(=04023
tcudorPhtdiwdnaB-niaGf
TVEC I,V03)
–(= CAm01)–(=07zHM
* : 2SA1353/2SC3417 are classified by 10mA hFE as follows : Continued on next page.
knaRCDEF
hEF 08ot04021ot06002ot001023ot061
Tc=25˚C
8.04.0
7.011.0
1.5
15.5 3.0
1.6
0.80.8
0.6 0.5
2
.7
4.8
2.4
1.2
123
3.0
No.1390-2/5
2SA1353/2SC3417
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am02)–(= BAm2
)–(=6.0)–(V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am02)–(= BAm2)–(=0.1)–(V
egatloVnwodkaerBesaB-ot-rotc
elloCV
OBC)RB( ICI,Aµ01)–(= E0=003)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞003)–(V
egatl
oVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C=∞5)–(V
ecnaticapaCtuptuOesaBnommoCC
bo VBC zHM1=f,V03)–(= 6.2F
p
)1.3(Fp
ecnaticapaCrefsnarTesreveRC
er VBC zHM1=f,V03)–(= 8.1Fp
)3.2(Fp
ITR03284
IC -- VCE
0--1-- 2--3-- 4-- 5-- 6-- 7--8-- 9--10
0
--1
--2
--3
--4
--5
--6
--7
--8
IB=0
ITR03285
IC -- VCE
1067 89123450
0
1
2
3
4
5
6
7
8
2SA1353
IB=0
2SC3417
ITR03286
IC -- VCE
0--40 -- 80 --120 -- 160 -- 200
0
--4
--5
--2
--3
--1
--6
--7
--8
IB=0
ITR03287
IC -- VCE
120 140 160 20018080 10040 60200
0
2
3
1
4
5
6
7
8
2SA1353
IB=0
2SC3417
--40μA
--4 0μA
--30μA
--20μA
--10μA
40μA
30μA
20μA
10μA
--30μA
--20μA
--10μA
40μA
30μA
20μA
10μA
ITR03288
IC -- VBE
0--0.2 -- 0.4 --0.6 -- 0.8 -- 1.0
0
--20
--40
--60
--80
--100
--120 2SA1353
VCE=--5V
Ta=75
°C
25
°C
--25
°C
ITR03289
IC -- VBE
0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120 2SC3417
VCE=5V
Ta=75
°C
25
°C
--25
°C
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE – V Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
No.1390-3/5
2SA1353/2SC3417
--
1.0 23 35757
--
10 7
--
100
522
7
100
10
5
7
5
2
3
2
ITR03292
fT -- IC
2SA1353
VCE=--30V
1.0 23 35757 10 7100
522
7
100
10
5
7
5
2
3
2
ITR03293
fT -- IC
2SC3417
VCE=30V
7
--
10 27
--
100 23
--
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03294
Cob -- VCB
2SA1353
f=1MHz
2SC3417
f=1MHz
710 27
100 23
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03295
Cob -- VCB
7
--
10 27
--
100 23
--
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03296
Cre -- VCB
2SA1353
f=1MHz
2SC3417
f=1MHz
710 27
100 23
1.0 23 55
1.0
7
10
5
7
5
3
2
2
ITR03297
Cre -- VCB
1000
100
10
ITR03290
hFE -- IChFE -- IC
2357 7
3
25 2
--
1.0
--
10
--
100
2
3
5
7
7
2
3
5
1.0 37723 5 10 100
522
7
10
5
7
100
1000
5
3
2
3
2
ITR03291
2SA1353
VCE=--10V
2SC3417
VCE=10V
Ta=75°C
25
°C
--25°C
Ta=75°C
25°C
--25°C
D
C
C
urrent
G
a
i
n,
h
FE
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre – pF
Collector-to-Base Volta
g
e
,
V
CB
-- V
Reverse Transfer Capacitance, Cre – pF
Collector-to-Base Volta
g
e
,
V
CB
-- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
No.1390-4/5
2SA1353/2SC3417
0 20 40 60 80 100 120 140 160
0
1
2
4
5
3
6
7
8PC -- Tc
ITR03303
0 20 40 60 80 100 120 140 160
0
0.2
0.4
1.0
1.2
0.6
0.8
1.4 PC -- Ta
ITR03302
ITR03300
VBE(sat) -- IC
557
--
10 22
--
1.0 233577
--
100
--
1.0
--
10
5
7
3
5
7
3
2
2
2SA1353
IC / IB=10
ITR03301
VBE(sat) -- IC
7557 10 22
1.0 23357
100
3
1.0
5
3
5
7
2
2
10
7
2SC3417
IC / IB=10
ITR03304
A S O
DC operation
(Ta=25
°C)
DC operation
(
Tc=25°C)
10ms
1ms
500μs
10
3
5
7
2
2
3
5
3
2355
7
57 100 23
10
7
2
100
ICP=200mA
IC=100mA
2SA1353 / 2SC3417
No heat sink
2SA1353 / 2SC3417 2SA1353 / 2SC3417
ITR03298
VCE(sat) -- IC
557
--
10 22
--
1.0 233577
--
100
--
0.1
--
1.0
5
3
3
5
7
7
2
--
10
5
7
3
2
2SA1353
IC / IB=10
ITR03299
VCE(sat) -- IC
557 10 22
1.0 233577100
0.1
7
1.0
5
7
7
3
3
5
2
10
5
3
2
2SC3417
IC / IB=10
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector Dissipation, P
C
–W
Ambient Temperature, Ta – ˚C
Collector Dissipation, P
C
–W
Case Temperature, Ta – ˚C
(For PNP, minus sign is omitted.)
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
PS No.1390-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2002. Specifications and information herein are subject to
change without notice.
2SA1353/2SC3417
