Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain
Current A
TA=25°C
ID
6
A
TA=70°C 5
Pulsed Drain Current BIDM 25
Power Dissipation A
TA=25°C PD
1.4 W
TA=70°C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Ty
p
Max Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
70 90 °C/W
Maximum Junction-to-Ambient ASteady-State 100 125 °C/W
Maximum Junction-to-Lead CSteady-State RθJL 63 80 °C/W
AO3420
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 4.5V)
RDS(ON) < 42mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
General Description
The AO3420 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. This device is
suitable for use as a uni-directional or bi-directional
load switch. Standard Product AO3420 is Pb-free
(meets ROHS & Sony 259 specifications). AO3420L
is a Green Product ordering option. AO3420 and
A
O3420L are electrically identical.
G
D
S
S
GD
TO-236
(SOT-23)
Top View
Alpha & Omega Semiconductor, Ltd.
AO3420
Symbol Min Typ Max Units
BVDSS 20 V
1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.5 0.7 1 V
ID(ON) 25 A
19 24
TJ=125°C 29 35
22 27
35 42
45 55
gFS 24 S
VSD 0.75 1 V
IS2A
Ciss 630 pF
Coss 164 pF
Crss 137 pF
Rg1.5 Ω
Qg8.8 nC
Qgs 1nC
Qgd 3.7 nC
tD(on) 5.5 ns
tr14 ns
tD(off) 29 ns
tf10.2 ns
trr 15.2 ns
Qrr 6.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
mΩ
IF=6A, dI/dt=100A/µs
VGS=0V, VDS=10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=6A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250uA
VDS=16V, VGS=0V
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=1.8V, ID=2A
VGS=4.5V, VDS=5V
VGS=10V, ID=6A
VGS=4.5V, ID=5A
VGS=2.5V, ID=4A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
Reverse Transfer Capacitance
Turn-Off Fall Time
Turn-On DelayTime
IS=1A,VGS=0V
VDS=5V, ID=3.8A
VGS=5V, VDS=10V, RL=1.7Ω,
RGEN=6Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev0 : July 2005
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
270
1.7
3.6
13
10
20
30
40
50
0246810
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
VGS=1.8V
25°C
125°C
VDS=5V
VGS=2.5V
VGS=4.5V
VGS=10V
ID=3.8A
25°C
125°C
ID=3.8A
ID=1A
ID=3.5A
0
10
20
30
012345
VDS(Volts)
Figure 1: On-Regions Characteristics
ID(A)
VGS =1.5V
VGS =2V
3V
4V
10V
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
25°C
125°C
VGS=5V
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalize ON-Resistance
VGS=4.5V
ID=5A
VGS=2.5V
ID=4A
VGS=1.8V
ID=2A
VGS=10V
ID=6A
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
IS(A)
25°C
125°C
10
20
30
40
50
60
70
80
02468
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON)(mΩ)
25°C
125°C
ID=6A
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
270
1.7
3.6
13
0
5
10
15
20
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power ( W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Crss
VDS=15V
ID=3.8A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
0
1
2
3
4
5
0246810
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS(Volts)
VDS=10V
ID=6A
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
VDS(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
Crss
Coss
0.1
1
10
100
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10µs
100µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C, TA=25°C
100m
1s
Alpha & Omega Semiconductor, Ltd.
