MAC223A6FP, MAC223A8FP, MAC223A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full-wave silicon-gate-controlled devices are needed. * Off-State Voltages to 800 Volts * All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability * Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation * Gate Triggering Guaranteed in Four Modes * Indicates UL Registered -- File #E69369 * Device Marking: Logo, Device Type, e.g., MAC223A6FP, Date Code http://onsemi.com ISOLATED TRIAC ( 25 AMPERES RMS 400 thru 800 VOLTS MT2 ) MT1 G MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1) (TJ = -40 to +125C, Sine Wave 50 to 60 Hz, Gate Open) MAC223A6FP MAC223A8FP MAC223A10FP VDRM, VRRM On-State RMS Current (TC = +80C)(2) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 25 Amps Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80C) Preceded and followed by rated current ITSM 250 Amps Volts 400 600 800 1 2 3 I2t 260 A2s Peak Gate Power (t 2 sec; TC = +80C) PGM 20 Watts ISOLATED TO-220 Full Pack CASE 221C STYLE 3 Average Gate Power (t = 8.3 ms; TC = +80C) PG(AV) 0.5 Watt PIN ASSIGNMENT Peak Gate Current (t 2 sec; TC = +80C) IGM 2.0 Amps Peak Gate Voltage (t 2 sec; TC = +80C) VGM "10 Volts V(ISO) 1500 Volts TJ -40 to +125 C Tstg -40 to +150 C -- 8.0 in. lb. Circuit Fusing (t = 8.3 ms) p p p RMS Isolation Voltage (TA = 25C, Relative Humidity 20%) ( ) p Operating Junction Temperature Storage Temperature Range Mounting Torque (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Semiconductor Components Industries, LLC, 1999 February, 2000 - Rev. 1 1 1 Main Terminal 1 2 Main Terminal 2 3 Gate ORDERING INFORMATION Device Package Shipping MAC223A6FP ISOLATED TO220FP 500/Box MAC223A8FP ISOLATED TO220FP 500/Box MAC223A10FP ISOLATED TO220FP 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC223A6FP/D MAC223A6FP, MAC223A8FP, MAC223A10FP THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RJC 1.2 C/W Thermal Resistance, Case to Sink RCS 2.2 C/W Thermal Resistance, Junction to Ambient RJA 60 C/W TL 260 C Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM -- -- -- -- 10 2.0 A mA VTM -- 1.4 1.85 Volts OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 125C ON CHARACTERISTICS Peak On-State Voltage (ITM = 35 A Peak, Pulse Width " p 2 ms; Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (V D = 12 V, R L = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) IGT Gate Trigger Voltage (Continuous dc) (V D = 12 V, R L = 100 ) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) MT2(-), G(+) VGT Gate Non-trigger Voltage (VD = 12 V, TJ = 125C, RL = 100 ) All Quadrants VGD Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = mA -- -- "200 mA) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) 20 30 50 75 Volts -- -- 1.1 1.3 2.0 2.5 0.2 0.4 -- IH -- 10 50 mA t gt -- 1.5 -- s dv/dt -- 40 -- V/s dv/dt(c) -- 5.0 -- V/s Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80C) http://onsemi.com 2 MAC223A6FP, MAC223A8FP, MAC223A10FP Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 - Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (-) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT - + IGT (-) MT2 Quadrant III (-) MT2 Quadrant IV (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM 115 105 95 85 75 5 10 15 20 25 20 10 0 5 0 10 15 20 25 Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation VD = 12 V RL = 100 W 1 0.5 0.3 0.2 -20 0 20 40 60 80 100 120 3 2 VD = 12 V RL = 100 W 1 0.5 0.3 0.2 0.1 -60 140 -40 -20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage 2 ITM = 200 mA GATE OPEN 1 0.5 0.3 0.2 0.1 -60 30 IT(RMS), RMS ON-STATE CURRENT (AMPS) 3 2 -40 40 IT(RMS), RMS ON-STATE CURRENT (AMPS) NORMALIZED GATE VOLTAGE 0 0.1 -60 NORMALIZED HOLD CURRENT PD(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 i TM , INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED GATE CURRENT TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) MAC223A6FP, MAC223A8FP, MAC223A10FP -40 -20 0 20 40 60 80 100 120 140 200 100 50 TJ = 25C 10 5 1 0.5 0.1 0 1 2 3 4 TJ, JUNCTION TEMPERATURE (C) vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical Hold Current Figure 6. Typical On-State Characteristics http://onsemi.com 4 140 MAC223A6FP, MAC223A8FP, MAC223A10FP PACKAGE DIMENSIONS ISOLATED TO-220 Full Pack CASE 221C-02 ISSUE C -T- -B- F SEATING PLANE C S P N E A Q H 1 2 3 -Y- K Z J L R G D 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 --- 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE http://onsemi.com 5 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 --- 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 MAC223A6FP, MAC223A8FP, MAC223A10FP Notes http://onsemi.com 6 MAC223A6FP, MAC223A8FP, MAC223A10FP Notes http://onsemi.com 7 MAC223A6FP, MAC223A8FP, MAC223A10FP ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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