NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for general–purpose applications. Op-
eration is completely specified over the range of voltages commonly used for these devices. The de-
sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the
class–B output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unity–gain com-
pensation network specified will make the amplifiers unconditionally stable in all feedback configura-
tions, compensation can be tailored to optimize high–frequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift
at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am-
plifier.
Absolute Maximum Ratings:
Supply Voltage ±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Note 1) 250mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage ±10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (TA = +25°C) 5 seconds. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range 0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds) +300°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For operating at elevated temperatures, the device must be derated based on a 100°C maxi-
mum junction temperature and a thermal resistance 150°C/W junction to ambient or 45°C/W,
junction to case for the metal can package.
Electrical Characteristics: (0°C ≤ TA = ≤ +70°C, ±9V ≤ VS ≤ ±15V, C1 = 5000pF, R1 = 1.5k,
C2 = 200pF and R2 = 51Ω unless otherwise specified)
Parameter Test Conditions Min Typ Max Unit
Input Offset Voltage TA = +25°C, RS ≤ 10kΩ– 2.0 7.5 mV
Input Bias Current TA = +25°C – 300 1500 nA
TA = TMIN – 0.36 2.0 µA
Input Offset Current TA = +25°C – 100 500 nA
TA = TMIN – 75 400 nA
TA = TMAX – 125 750 nA