S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
Low Input Driving Type
Phototriac Coupler
■Features
■Applications
1. For triggering medium/high power triacs
∗3 For 10 seconds
■Outline Dimensions (Unit : mm)
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
■Absolute Maximum Ratings (Ta= 25˚C)
100V line 200V line
No zero-cross
circuit S11MD7T/
S11MD9T S21MD7T/
S21MD9T
Built-in zero-
cross circuit S11MD8T S21MD8T
Parameter Symbol Rating Unit
Input Forward current IF50 mA
Reverse voltage VR6V
Output RMS ON-state current IT0.1
∗1Peak one cycle surge current Isurge 1.2 A
Repetitive peak OFF-state voltage VDRM 400 600 V
∗2Isolation voltage Viso
Operating temperature Topr - 30 to +100 ˚C
Storage temperture Tstg - 55 to +125 ˚C
∗3Soldering temperature Tsol 260 ˚C
θ
S11MD8T
123
46
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
6 Anode/
Cathode
Internal connection
diagram
Anode
mark 123
46
❈
Zero-cross
circuit
1. Low input driving current
2. Pin No. 5 completely molded for external
noise resistance
(Viso rms )
3. Built-in zero-cross circuit
S11MD7T/S11MD8T
S11MD9T S21MD7T/S21MD8T/
S21MD9T
IFT : MAX. 5mA
S11MD9T /S21MD9T IFT : MAX.7mA )
(S11MD7T/S11MD8T/S21MD7T/S21MD8T
■Model Line-ups
4. High repetitive peak OFF-state voltage
(S11MD7T /S11MD8T /S11MD9T
VDRM : MIN. 400V
S21MD7T /S21MD8T /S21MD9T
VDRM : MIN. 600V
∗1 50Hz Sine wave
❈ DIN-VDE0884 approved type is also available.
: 5 000V
5 000
∗2 40 to 60%RH, AC for 1 minute, f= 60Hz
(S11MD8T/S21MD8T)
5. Isolation voltage between input and output
6. Recognized by UL, file No.E64380
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
“In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
Arms
Vrms
❈ Taping reel type of S21MD8T is also available (S21MD8P)
∗ Zero-cross circuit for S11MD8T and S21MD8T
θ:0 to 13 ˚
6.5±0.5
0.9±0.2
1.2±0.3
2.54±0.25
7.12±0.5 7.62±0.3
0.26±0.1
0.5±0.1
0.5TYP. 3.5±0.5
3.7±0.5
3.35±0.5
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
-30 0 20406080100
0
0.05
0.10
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
RMS ON-state current I T
Ambient temperature T a (˚C)-30 0 25 50 75 100 125
0
10
20
30
40
50
60
70
Fig. 2 Forward Current vs.
Ambient Temperature
Forward current IF (mA)
Ambient temperature Ta (˚C)
(Arms)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Forward voltage VFIF= 20mA - 1.2 1.4 V
Reverse current IRR
=3VV--10
-5 A
Output
Repetitive peak OFF-state current
IDRM VDRM = Rated - - 10-6 A
ON-state voltage
S11MD7T/S21MD7T
S11MD9T/S21MD9T
VTIT= 0.1A - 1.5 2.5 V
S11MD8T/S21MD8T
- 1.7 2.5
Holding current IHVD= 6V 0.1 0.5 3.5 mA
Critical rate of rise of OFF-state voltage
2
VDRM = 1/ • Rated 100 - - V/µs
Zere-cross voltage
S11MD8T/S21MD8T
VOX F = 10mAResistance load, I - - 35 V
Transfer
charac-
teristics
Minimum trigger
current
S11MD7T/S21MD7T
S11MD8T/S21MD8T
IFT VD= 6V, RL= 100Ω--5
mA
--7
S11MD9T/S21MD9T
Isolation resistance RISO DC500V, 40 to 60% RH
5x10
10
1011 -Ω
Turn-on time
S11MD7T
ton VD= 6V, RL= 100Ω
IF= 20mA
- 70 100
µs- 60 100
S11MD9T/S21MD7T/
S21MD9T
-2050
S11MD8T/S21MD8T
■Electro-optical Characteristics (Ta = 25˚C)
dV/dt
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
500
200
10
5
2
10 0.5 1.0 1.5 2.5 3.02.0
75˚C
-30˚C
50˚C
100
20
50
0˚C
25˚C
Fig. 3 Forward Current vs. Forward Voltage
Forward current IF (mA)
10
8
6
4
2
100806040200
0-30
12
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
-30
0.7 0 20406080100
0.8
0.9
1.0
1.1
1.2
1.3
Fig. 5 Relative Repetitive Peak OFF-State
Voltage vs. Ambient Temperature
VDRM (T=T
a
)
/V DRM (T = 25˚C)
S11MD8T/S21MD8T
S11MD7T/S21MD7T
S11MD9T/S21MD9T
1.3
1.4
-30 0 20 100
1.5
1.6
1.7
1.8
1.9
40 60 80
S21MD8T
S11MD8T
S11MD7T/S21MD7T
S11MD9T/S21MD9T
Fig. 6 ON-state Voltage vs. Ambient
Temperature
Ambient temperature Ta(˚C)
T (V)
-30 100
0.1
0.2
0.5
1
2
5
10
806040200
S11MD8T/S21MD8T
S11MD7T/S21MD7T
S11MD9T/S21MD9T
Ambient temperature T a (˚C)
Holding current IH (mA)
2
10-9
5
2
-10
5
100 200 300 400 500 600
vs. OFF-state Voltage
DRM (A)
D
(V)
Fig. 7 Holding Current vs.
Ambient Temperature
FT (mA)
Ambient temperature T a (˚C)
Ambient temperature T a(˚C)
(S11MD7T/S11MD9T)
Forward voltage V F (V)
Minimum trigger current I
S11MD9T/S21MD9T
S11MD8T/S21MD8T S11MD7T/S21MD7T
Relative repetitive peak OFF-state voltage
jj
Repetitive peak OFF-state current I
OFF-state voltage V
Fig. 8-a Repetitive Peak OFF-state Current
Ta= 100˚C
RL= 100Ω
VD=6V
I
T= 100mA
VD=6V T
a= 25˚C
ON-state voltage V
10
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
S11MD8T
S21MD8T
5
2
5
100 200 300 400 500 600
vs. OFF-state Voltage
(S11MD8T/S21MD8T)
(A)
2
100 200 300 400 500 600
5
2
5
vs. OFF-state Voltage
10-9
10-10
10-11
-30 0 100
10-7
20 40 60 80
10-12
10-8
10-9
10-10
10-11
vs. Ambient Temperature
Ambient temperature Ta (˚C)
VD= 400V (S11MD7T/S11MD9T )
VD= 600V (S21MD7T/S21MD9T )
(S11MD7T/S11MD9T/S21MD7T/S21MD9T)
-30 0 100
10-4
20 40 60 80
10-9
10-5
10-6
10-7
10-8
vs. Ambient Temperature
(S11MD8T/S21MD8T)
Ambient temperature Ta(˚C)
VD= 400V (S11MD8T)
VD= 600V (S21MD8T)
-30 0 20406080100
15
20
25
Zero-cross voltage VOX (V)
Ambient temperature T a(˚C)
Fig.10 Zero-cross Voltage vs.
(S11MD8T/S21MD8T)
50
20 20
30
10
200
100
50
Turn-on time t on (µs)
DRM (A)
Off-state voltage VD (V)
Ta=25˚C
R load
IFVD=6V
R
L= 100Ω
Forward current I F (mA)
Fig. 8-b Repetitive Peak OFF-state Current
10-8
10-7
DRM
Repetitive peak OFF-state current I
Repetitive peak OFF-state current I (A)
DRM
OFF-stage voltage V D (V)
(S21MD7T/S21MD9T)
Fig. 9-a Repetitive Peak OFF-state Current
Fig. 9-b Repetitive Peak OFF-state Current
Fig. 8-c Repetitive Peak OFF-state Current
Repetitive peak OFF-state current I
DRM (A)
Repetitive peak OFF-state current I
(S11MD7T)
Ambient Temperature
= 10mA
2Ta= 25˚C
Fig.11-a Turn-on Time vs. Forward Current
5
S11MD8T
S21MD8T
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
50
10 2010
100
50
20
(S11MD8T/S21MD8T )
Turn-on time ton (µs)
50
20 20
30
10
200
100
50
(S11MD9T/S21MD7T/S21MD9T )
VD=6V
R
L= 100Ω
Turn-on time ton (µs)
0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
20
30
40
50
60
70
80
90
100
S21MD9T
S11MD9T
S21MD7T
S11MD7T
T (mA)
T (V)
IF= 20mA
Ta= 25˚C
0
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
20
30
40
50
60
70
80
90
100
S21MD8T
S11MD8T
T (mA)
T (V)
Zero-
cross
+VCC
VIN
Load
1
2
6
4
■Basic Operation Circuit
S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
AC100V
(S11MD7T/S11MD8T/S11MD9T)
AC200V
(S21MD7T/S21MD8T/S21MD9T)
Zero-cross Circuit
(S11MD8T/S21MD8T )
Forward current I F (mA)
VD=6V
RL= 100Ω
IF= 20mA
Ta= 25˚C
ON-state Voltage
Forward current I F (mA)
Fig.11-b Turn-on Time vs. Forward Current Fig.11-c Turn-on Time vs. Forward Current
Fig.12-a ON-state Current vs.
ON-state current I
ON-state voltage V
(S11MD7T/S21MD7T/S11MD9T/S21MD9T)
ON-state current I
Fig.12-b ON-state Current vs.
(S11MD8T/S21MD8T)
ON-state voltage V
circuit
ON-state Voltage
●Please refer to the chapter “Precautions for Use.”
5 5
115
Application Circuits
NOTICE
●The circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
●Observe the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
●If the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
●This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
●Contact and consult with a SHARP representative if there are any questions about the contents of this
publication.
