2N7637-GA
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Normally – OFF Silicon Carbide
Junction Transistor
Features
Package
• 210°C maximum operating temperature
• Electric ally Isol ated B ase Plat e
• Gate Oxide Free SiC Switch
• Exceptional S afe Operati ng Area
• Excellent Gain Linearit y
• Compatible with 5 V TTL Gate Drive
• Temperature Independent S witc hing Performance
• Low Output Capacitance
• Positive Temperature Coef fi cient of RDS,ON
• Suitable for Connecti ng an Anti-parallel Di ode
• RoHS Compliant
TO – 257 (Isolated Base-plate Hermetic Package)
Advantages
Applications
• Compatible with Si MOSFET/IGB T Gate Dri ve ICs
• > 20 µs Short-Circuit Withstand Capability
• Lowest-in-class Conduction Losses
• High Circuit Efficiency
• Minimal Input Signal Distortion
• High Amplifi er Bandwidth
• Down Hole Oil Drilling
• Geothermal Instrumentation
• Solenoid Actuators
• General Purpose High-Temperature Switching
• Amplifiers
• Solar Inverters
• Switched-Mode Power Supply (SMPS)
• Power Factor Correction (PFC)
Table of Contents
Sectio n I: A bsol u te Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics ....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Sectio n IV : F igures ...........................................................................................................................................3
Sectio n V: Driving the 2N7637-GA ..................................................................................................................5
Section VI: Package Dimensions: ...................................................................................................................8
Section VII: SPICE Model Parameters ............................................................................................................9
Section I: Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Drain – Source Voltage
VDS
V
= 0 V
600
V
Continuous Drain Current
ID
TJ = 210°C, TC = 25°C
20
A
Continuous Gate Current
IGM
1.25
A
Turn-Off Safe Operating Area RBSOA TVJ = 210°C, IG = 1.25 A,
Clamped Inductive Lo ad
I
D,max
= 20
@ VDS ≤ VDSmax
A
Short Circuit Safe Operati ng Area SCSOA TVJ = 210°C, IG = 1.25 A, VDS = 400 V,
>20 µs
Reverse Gate – Source Voltage
VGS
30
V
Reverse Drain – Source Voltage
VDS
40
V
Power Dissipation
P
tot
TJ = 210°C, TC = 25°C
80
W
Operating and Storage Tem perature Tj, Tstg -55 to 210 °C
GD S
D
S
G
VDS = 600 V
RDS(ON) = 170 mΩ
ID (Tc = 25°C) = 20 A
hFE (Tc = 25°C) = 110
2N7637-GA
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Section II: Static Electrical Characteristics
Parameter Symbol Conditions
Values
Unit
min. typ. max.
A: On State
Drain – Source On Resistance RDS(ON) ID = 7 A, Tj = 25 °C
170
mΩ
ID = 7 A, Tj = 175 °C
320
I
D
= 7 A, T
j
= 210 °C
440
Gate – Source Saturation Voltage VGS,SAT ID = 10 A, ID/IG = 40, Tj = 25 °C
ID = 10 A, ID/IG = 30, Tj = 175 °C
3.50
3.27 V
DC Current Gain hFE V
DS
= 5 V, I
D
= 10 A, T
j
= 25 °C
80
110
VDS = 5 V, ID = 10 A, Tj = 210 °C
50
80
B: Off State
Drain Leakage Current IDSS VR = 600 V, VGS = 0 V, Tj = 25 °C
10
100
µA
VR = 600 V, VGS = 0 V, Tj = 175 °C
40
400
V
R
= 600 V, V
GS
= 0 V, T
j
= 210 °C
100
600
C: Thermal
Thermal resistanc e, junct i on - case
RthJC
2.5
°C/W
Section III: Dynamic Electrical Characteristics
Parameter Symbol Conditions
Values
Unit
min. typ. max.
A: Capacitance and Gate Charge
Input Capacitance
Ciss
VGS = 0 V, VD = 500 V, f = 1 MHz
685
pF
Reverse Transfer/Out put Capac itance
C
rss
/C
oss
VD = 500 V, f = 1 MHz
24
pF
Output Capacitance Stored Energy
E
OSS
VGS = 0 V, VD = 500 V, f = 1 MHz
3.1
µJ
Effective Out put Capacit ance,
time related Coss,tr ID = constant, VGS = 0 V, VDS =
0…400 V 50 pF
Effective Out put Capacit ance,
energy related
Coss,er VGS = 0 V, VDS = 0…400 V 37 pF
Gate-Source Charge
QGS
V
GS
= -5…3 V
11
nC
Gate-Drain Charge
QGD
VGS = 0 V, VDS = 0…400 V
20
nC
Gate Charge - Total
QG
31
nC
B: Switching
Turn On Delay Time
t
d(on)
Tj = 175 ºC, VDS = 400 V,
ID = 7 A, Inductive Load
Refer to Section V for additional
driving information.
10
ns
Rise Time
t
r
30
ns
Turn Off Delay Time
td(off)
75
ns
Fall Time
tf
40
ns
Turn-On Energy Per Pulse
Eon
35
µJ
Turn-Off Energy Per Pulse
Eoff
65
µJ
Total Switching Energy
E
ts
100
µJ
Turn On Delay Time
t
d(on)
Tj = 210 ºC, VDS = 400 V,
ID = 7 A, Inductive Load
Refer to Section V for additional
driving information.
10
ns
Rise Time
t
r
30
ns
Turn Off Delay Time
td(off)
75
ns
Fall Time
tf
60
ns
Turn-On Energy Per Pulse
Eon
45
µJ
Turn-Off Energy Per Pulse
Eoff
80
µJ
Total Switching Energy
E
ts
125
µJ
2N7637-GA
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Section IV: Figures
A: Static Characteristics
Figure 1: Typical Ou tp u t Characteristics at 25 °C Figure 2: Typical Ou tp u t Characteristics at 175 °C
Figure 3: Typical Output Characteristics at 210 °C Figure 4: Typical G ate – Source Saturation Volta ge
Figure 5: DC Current Gain and Normalized On-Resistance
vs. Temperature
Figure 6: Typical Bl o cking Characteristics
2N7637-GA
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B: Dynamic Characteristics
Figure 7: Capacitance Characteristics Figure 8: Output Capacitance Stored Energy
Figure 9: Typical Turn On Energy Losses and Switching
Times vs. Temperature
Figure 10: Typical Turn Off Energy Losses and Switching
Times vs. Temperature
2N7637-GA
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Section V: Driving the 2N7637-GA
The 2N7637-GA is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be
driven by different drive topol ogi es depending on the intended appl ication.
Table 1: Estimated Power Consumption and switching frequencies for variou s Gate Drive topologies.
Drive Topology
Gate Drive Power
Consumption
Switching
Frequency
Simple TT L
High
Low
Constant Current
Medium
Medium
High Speed – Boost Capacitor
Medium
High
High Speed – Boost Inductor
Low
High
Proportional
Lowest
Medium
Pulsed Power
Medium
N/A
A: Simple TTL Drive
The 2N7637-GA may be driven by 5 V TTL logic using a simple current am plification stage. The current amplifi er output current must meet or
exceed the steady state gate current, IG,steady, required to operate the 2N7637-GA. An external gate resistor RG, shown in the
Figure 11 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be
calculated from t he equation below. The value of VEC,sat can be t aken from the PNP datasheet, a partial list of high-temperat ure PNP and NPN
transist ors opti ons is given below. High-temperature MOSFETs may also be used in the topology.
, =5.0 , () , () (,)
1.5
Figure 11: Simple TTL Gate Drive Topology
Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving
BJT Part Number Type Tj,max (°C)
PHPT60603PY
PNP
175
PHPT60603NY
NPN
175
2N2222
NPN
200
2N6730
PNP
200
2N2905
PNP
200
2N5883
PNP
200
2N5885
NPN
200
SiC SJT
D
S
G
TTL
Gate Signal
0 / 5 V
TTL i/p
inverted
I
G,steady
5 V
PNP
NPN
Inverting
Current
Boost
Stage
0 / 5 V
TTL o/p R
G
2N7637-GA
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B: High Speed Driving
For ultra high speed 2N7637-GA switching (tr, tf < 20 ns) while maintaining low gate drive losses the supplied gate current should include a
positive current peak during turn-on, a negative volt age peak during turn-off, and continuous gate current IG to remain on.
An SJT is rapidly switched f rom its bl ocking st ate to on-stat e, when the necessary gat e charge for tur n-on, QG, is supplied by a burst of hi gh
gate current until the gate-source capacitance, CGS, and gate-drain capacitance, CGD, are fully charged. Ideally, the burst should terminate
when the drain voltage has f al l en to it s on-state value in order to avoid unnecessary drive losses. A negative voltage peak is recommended for
the turn-off transition in order t o ensure that t he gate current is not being supplied under high dV/ dt due to the Mill er eff ect. While satisfactory
turn off can be achieved with VGS = 0 V, a negative VGS value m ay be used in order to speed up the turn-off transition.
B:1: High Speed, Low Loss Drive with Boost Capacitor
The 2N7637-GA may be driven using a High Speed, Low Loss Drive with Boost Capacitor topology in which multiple voltage levels, a gate
resistor, and a gate capacitor are used to provide current peaks at turn-on and turn-of f for fast switc hing and a cont i nuous gate current while in
on-state. As shown in Fi gure 12, in this topology two gate driver ICs are ut ilized. An external gate resist or RG is driven by a low voltage driver
to supply t he continuous gate current t hroughout on-state. and a gate capacitor CG is driven at a high er voltage level to suppl y a high current
peak at turn-on and turn-off. A 3 kV isolated evaluation gate drive board (GA03IDDJT30-FR4) from GeneSiC Semiconductor utilizing this
topology is commercial l y avail abl e for high and low-side driving, its datas heet provides additi onal details about this drive topology.
Figure 12: High Speed, Low Loss Drive with Boost Capacitor Topology
B:2: High Speed, Low Loss Drive with Boost Ind uct or
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the 2N7637-GA at high-speed. It utilizes a gate drive inductor
instead of a capacitor t o provide the high-current gate current pulses IG,on and IG,off. During operation, inductor L is charged to a specified IG,on
current value then made to discharge IL into the SJT gate pin using logic control of S1, S2, S3, and S4, as shown in Figure 13. After turn on,
while the device rem ai ns on the necess ary steady st ate gate c urrent I G,steady is suppl i ed from s ource VCC through RG. Pl ease refer t o the artic le
“A current -source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information on this
driving topology.3
Figure 13: High Spe e d, Low-Loss Driver with Boost Inductor Topology
3 – Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–34 3, I SS N (Prin t) 00 04-0746, DOI: 10.2478/aee-2013-0026, June 2013
Gate
RG
CGIG
SiC SJT
D
S
G
VGH
VGL
Gate Signal
SiC SJT D
S
G
L
R
G
V
EE
V
CC
V
CC
V
EE
S
1
S
2
S
3
S
4
2N7637-GA
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C: Proportional Gate Current Driving
A proportional gat e drive topology m ay be beneficial f or applications in which the 2N7637-GA will operat e over a wide range of drain current
conditi ons to lower the gate drive power consumpt ion. A proportional gat e driver relies on instant aneous drain current I D feedback to vary the
steady state gate current IG,steady supplied to the 2N7637-GA.
C:1: Voltage Controlled Proportional Driver
A voltage controlled proportional driver relies on a gate drive int egrated circuit to detect the 2N7637-GA drain-source voltage V DS during on-
state to sense I D. The integrated circ uit will then increas e or decrease IG in respons e to ID. This allows IG and gate dri ve power consumption to
reduce while ID is low or for IG to increase when ID increases. A high voltage diode connected between the drain and sense protects the
integrated circuit from high-voltage when blocking. A simplified version of this topology is shown in Figure 14. Additional information will be
available in the future at http://www.genesicsemi.com/references/product-notes/.
Figure 14: Simplified Voltage Controlled Proportional Driver
C:2: Current Controlled Proportional Driver
The current controlled proportional driver relies on a low-loss transformer in the drain or source path to provide feedback of the
2N7637-GA drain current during on-state to supply IG,steady into the gate. IG,steady will increase or decrease in response to ID at a fixed forced
current gain which is set be the turns ratio of the transformer, hforce = ID / IG = N2 / N1. 2N7637-GA is i ni t iall y tuned-on using a gate current pulse
supplied into an RC drive circuit to allow ID current to begin flowing. This topology allows IG,steady and the gate drive power consumption to
reduce while ID is relatively low or for IG,steady to increase when ID increases. A simplified version of this topology is shown in Figure 15.
Additional information will be available in the future at http://www.genesicsemi.com/references/product-notes/.
Figure 15: Simplified Current Controlled Proportional Driver
SiC SJT
Proportional
Gate Current
Driver D
S
G
Gate Signal
I
G,steady
HV Diode
Sense
Signal Output
SiC SJT D
S
G
N
2
N
2
N
1
N
3
Gate Signal
2N7637-GA
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Section VI: Package Dimensions:
TO-257 PACKAGE O UTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENS ION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Revision History
Date Revision Comments Supersedes
2014/12/12 6 Updated Electrical Charact erist ics
2014/08/23 5 Updated Electrical Charact erist ics
2014/03/20 4 Updated Gate Drive Section
2014/02/11 3 Updated Electrical Charact erist ics
2013/12/19 2 Updated Gate Drive Section
2013/11/18 1 Updated Electrical Charact erist ics
2012/08/24 0 Initial release
Publis hed by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specific ations and dat a in this document without notice.
GeneSiC disclaims all and any warranty and liabil ity arising out of use or application of any product. No license, express or implied to any
intellect ual propert y rights is granted by this document.
Unless otherwise expressly i ndicated, GeneS i C products are not designed, t est ed or authorized f or use in life-saving, medical, aircraft
navigation, comm unication, ai r t raffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
2N7637-GA
Dec 2014 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/ Pg 1 of 1
Section VII: SPICE Model Par amet ers
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/sjt/2N7637-GA_SPICE.pdf) into LTSPICE (version 4)
software for simulation of the 2N7637-GA.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.3 $
* $Date: 12-DEC-2014 $
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model 2N7637 NPN
+ IS 9.8338E-48
+ ISE 1.0733E-26
+ EG 3.23
+ BF 130
+ BR 0.55
+ IKF 200
+ NF 1
+ NE 2.
+ RB 7.2
+ IRB 0.002
+ RBM 0.2
+ RE 0.1039
+ RC 0.06188
+ CJC 2.73E-10
+ VJC 3.04
+ MJC 0.448
+ CJE 6.86E-10
+ VJE 2.89
+ MJE 0.466
+ XTI 3
+ XTB -0.35
+ TRC1 1.90E-2
+ VCEO 600
+ ICRATING 20
+ MFG GeneSiC_Semiconductor
*
* End of 2N7637-GA SPICE Model
Mouser Electronics
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