DESIGNATION BY DATE
ORIGINATED JOHN WALKER 5/02/99
DATASHEET ENTERED ADRIAN BUCKLEY 5/02/99
PROOFED
ISSUED
PACKAGES:TYPE:
ISSUE: 1
PRODUCT: D1201UK.01
PATH & FILENAME: C:\APPROVED\DTASHEET\R_F\D1201UK.01.QXD
MAIN FILENAME
DESCRIPTION PATH & FILENAME:
PACKAGE 1 C:\APPROVED\PACKAGES\RF\RF_DP.EPS
PACKAGE 2 C:\
AUXILIARY FILES
ISSUE CHANGE DATE
REVISIONS
PAGE 1 OF 3
RF_DPDMOS RF
TETRAFET
D1201UK.01
Prelim.2/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage
BVGSS Gate – Source Breakdown Voltage
ID(sat) Drain Current
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
50W
40V
±20V
10A
–65 to 150°C
200°C
MECHANICAL DATA
GKM
J
IE
D
(2 p ls)
C
N
(typ)
AB
F
(2 pl s)
H
1
2
3
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
•LOW C
rss
• USEFUL POAT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
DP
PIN 1 SOURCE PIN 2 DRAIN
PIN 3 GATE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 16.51 0.25 0.650 0.010
B 6.35 0.13 0.250 0.005
C 45° 5° 45° 5°
D 3.30 0.13 0.130 0.005
E 18.92 0.08 0.745 0.003
F 1.52 0.13 0.060 0.005
G 2.16 0.13 0.085 0.005
H 14.22 0.08 0.560 0.003
I 1.52 0.13 0.060 0.005
J 6.35 0.13 0.250 0.005
K 0.13 0.03 0.005 0.001
M 5.08 0.51 0.200 0.020
N 1.27 x 45° 0.13 0.050 x 45° 0.005
D1201UK.01
Prelim.2/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 100mA
VDS = 12.5V VGS = 0
VGS = 20V VDS = 0
ID= 100mA VDS = VGS
VDS = 10V ID= 1A
PO= 10W
VDS = 12.5V IDQ = 0.4A
f = 500MHz
VDS = 0 VGS = –5V f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
VDS = 12.5V VGS = 0 f = 1MHz
V
mA
µA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source
BVDSS Breakdown Voltage
Zero Gate Voltage
IDSS Drain Current
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
ηDrain Efficiency
VSWR Load Mismatch Tolerance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
40
1
1
0.5 5
0.8
10
50
20:1 60
40
4
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 3.5°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤2%
