February 2006
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C32098A
3.3 V 128K × 16 CMOS SRAM
2/17/06, v 1.1 Alliance Semiconductor P. 1 of 10
Features
Industrial and commercial temperature
Organization: 13 1,072 words × 16 bits
Center power and ground pins
High speed
- 10/12/15/20 ns address access time
- 4/5/6/7 ns output enable access time
Low power consumption: ACTIVE
- 650 mW /max @ 10 ns
Low power consumption: STANDBY
-28.8 mW /max CMOS
Individual byte read/write controls
Easy memory expansion with CE, OE inputs
TTL- and CMOS-compatible, three-state I/O
44-pin JEDEC standard packages
- TSOP 2
ESD protection 2000 volts
Latch-up current 200 mA
Logic block diagram
1024 × 128 × 16
Array
(2,097,152)
OE
CE
WE Column decoder
Row Decoder
A0
A1
A2
A3
A4
A6
A7
A8
V
CC
GND
A12
A5
A9
A10
A11
A14
A15
A16
A13
Control circuit
I/O1–I/O8
I/O9–I/O16
UB
LB
I/O
buffer
Pin arrangement for TSOP 2
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
I/O14
I/O13
GND
V
CC
I/O12
I/O11
I/O10
I/O9
NC
A13
A12
A11
A10
NC
A4
CE
I/O1
I/O2
I/O3
I/O4
V
CC
GND
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7 21
22
A8
A9
UB
LB
I/O16
I/O15
2A1 3A2 4A3
1
A0
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
43
42
41
44 A15
A14
OE
A16
Selection guide –10 –12 –15 –20 Unit
Maximum address access time 10 12 15 20 ns
Maximum output enable access time 4 5 6 7 ns
Maximum operating current Industrial 180 160 140 110 mA
Commercial 170 150 130 100 mA
Maximum CMOS standby current 8 8 8 8 mA
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Functional description
The AS7C32098A is a high-performance CMO S 2,097,152-bit Static Random Access Memory (SRAM) device organized as
131,072 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are
desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are
ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank
memory systems.
When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in
CMOS standby mode. A wri te cycle is acco mplished by assert ing write enable (WE) and chip enable (CE). Data on the input
pins I/O1–I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external
devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or
write enable is active, output drivers stay in high-impedance mode.
The device provides multiple center power and ground pins, an d separate byte enable controls, allowing individ ual bytes to be
written and read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits , I/O9–I/O16.
All chip inputs and outputs are TTL- an d CMOS-compatible, and operation is for 3.3V (AS7C32 098A) supply. The device is
available in the JEDEC standard TSOP 2 package.
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Absolute maximum ratings
Parameter Symbol Min Max Unit
Voltage on VCC relative to GND Vt1 –0.50 +5.0 V
Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V
Power dissipation PD–1.5W
Storage temperature (plastic) Tstg –65 +150 °C
Ambient temperature with VCC applied Tbias –55 +125 °C
DC current into outputs (low) IOUT –±20mA
Truth table
CE WE OE LB UB I/O1–I/O8 I/O9–I/O16 Mode
H X X X X High Z High Z Standby (ISB, ISB1)
LHHXX High Z High Z Output disable (ICC)
LXXHH
LHL
LH D
OUT High Z
Read (ICC)H L High Z DOUT
LL D
OUT DOUT
LLX
LH D
IN High Z
Write (ICC)
H L High Z DIN
LL D
IN DIN
Key: X = Don’t care, L = Low, H = High.
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Recommended operating conditions
Parameter Symbol Min Typical Max Unit
Supply voltage VCC (10/12/15/20) 3.0 3.3 3.6 V
Input voltage VIH** 2.0 VCC + 0.5 V
VIL*–0.5 0.8 V
Ambient operating temperature commercial TA0– 70°C
industrial TA–40 85 °C
* VIL min = –1.0V for pulse width less than 5ns.
** VIH max = VCC + 2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)1
Parameter Symbol Test conditions
–10 –12 –15 –20
UnitMin Max Min Max Min Max Min Max
Input leakage
current |ILI|VCC = Max
VIN = GND to VCC 11–1–1µA
Output leakage
current |ILO|
VCC = Max
CE = VIH or OE = VIH
or WE = VIL
VI/O = GND to VCC
11–1–1µA
Operating
power suppl y
current ICC VCC = Max
CE VIL, f = fmax IOUT = 0mA
Industrial 180 160 140 110 mA
Commercial - 170 - 150 - 130 - 100 mA
Standby power
supply current
ISB VCC = Max
CE VIH, f = Max 60 60 60 60 mA
ISB1
VCC = Max
CE VCC – 0.2V, VIN VCC – 0.2V or
VIN 0.2V, f = 0
88–8–8mA
Output voltage VOL IOL = 8 mA, VCC = Min 0.4 0.4 0. 4 0.4 V
VOH IOH = –4 mA, VCC = Min 2.4 2.4 2.4 2.4 V
Capacitance (f = 1MHz, Ta = 25° C, VCC = NOMINAL)4
Parameter Symbol Signals Test conditions Max Unit
Input capacitance CIN A, CE, WE, OE, UB, LB VIN = 0V 6 pF
I/O capacitance CI/O I/O VIN = VOUT = 0V 8 pF
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Key to switching waveforms
Read waveform 1 (address controlled)5,6,8
Read cycle (over the operating range)2,8
Parameter Symbol
–10 –12 –15 –20
Unit NotesMin Max Min Max Min Max Min Max
Read cycle time tRC 10 12–15–20– ns
Address access time tAA 10–12–15–20ns
Chip enable (CE) access time tACE 10–12–15–20ns
Output enable (OE) access time tOE 4–5–6–7ns
Output hold from address chang e tOH 3 3–3–3–ns4
CE Low to output in low Z tCLZ 3 3–3–3–ns3,4
CE High to output in high Z tCHZ 5–6–7–9ns3,4
OE Low to output in low Z tOLZ 0 0–0–0–ns3,4
OE High to output in high Z tOHZ 5–6–7–9ns3,4
LB, UB access time tBA 5–6–7–8ns
LB, UB Low to output in low Z tBLZ 0 0–0–0–ns
LB, UB High to output in high Z tBHZ 5–6–7–9ns
Power up time tPU 0 0–0–0–ns4
Power down time tPD 10–12–15–20ns4
Undefined/don’t careFalling inputRising input
t
OH
t
AA
t
RC
t
OH
Data
OUT
Address
Data validPrevious data valid
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Read waveform 2 (CE, OE, UB, LB controlled)5,7,8
Write cycle (over the operating range)9
Parameter Symbol
–10 –12 –15 –20
Unit NoteMin Max Min Max Min Max Min Max
Write cycle time tWC 10–12–1520 ns
Chip enable (CE) to write end tCW 7–8–1012–ns
Address setup to write end tAW 7–8–1012–ns
Address setup time tAS 000–0–ns
Write pulse width (OE = High) tWP1 7–8–1012–ns
Write pulse width (OE = Low) tWP2 10–12–1520 ns
Write recovery time tWR 000–0–ns
Address hold from end of write tAH 000–0–ns
Data valid to write end tDW 56 7–9–ns
Data hold time tDH 000–0–ns3,4
Write enable to output in High-Z tWZ 05060709ns3,4
Output active from write end tOW 333–3–ns3,4
Byte enable Low to write end tBW 7–8–1012–ns3,4
Data valid
t
RC
t
AA
t
BLZ
t
BA
t
OE
t
OLZ
t
OH
t
OHZ
t
CHZ
t
BHZ
t
ACE
t
CLZ
Address
OE
CE
LB, UB
Data
OUT
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Write waveform 1(WE controlled)9
Write waveform 2 (CE controlled)9
Address
CE
LB, UB
WE
Data
IN
Data
OUT
t
WC
t
CW
t
BW
t
AW
t
AS
t
WP
t
DW
t
DH
t
OW
t
WZ
t
AH
Data undefined High Z
Data valid
t
WR
Address
CE
LB, UB
WE
Data
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
OW
t
WZ
t
AH
Data
OUT
Data undefined
High Z High Z
t
AS
t
AW
Data valid
t
CLZ
t
WR
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Write waveform 3 9
AC test conditions
Notes
1During V
CC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2 For test conditions, see AC Test Conditions, Figures A and B.
3t
CLZ and tCHZ are specified with CL = 5pF as in Figure B. Tr ansition is measured ±500mV from steady-state voltage.
4 This parameter is guaranteed, but not tested.
5WE
is High for read cycle.
6CE
and OE are Low for read cycle.
7 Address valid prior to or coincident with CE transition Low.
8 All read cycle timings are referenced from the last valid address to the first transitioning address.
9 All write cycle timings are referenced from the last valid address to the first transitioning address.
10 C=30pF, except on High Z and Low Z parameters, where C=5pF.
Address
CE
LB, UB
WE
Data
IN
t
WC
t
CW
t
BW
t
WP
t
DW
t
DH
t
WZ
t
AH
Data
OUT
Data undefined
High Z High Z
t
AS
t
AW
Data valid
t
WR
- Output load: see Figure B.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
10%
90%
10%
90%
GND
+3.0V
2 ns
Figure A: Input pulse
350
C
10
320
D
OUT
GND
+3.3V
Figure B: 3.3V Output load
168
D
OUT
+1.728V
Thevenin equivalent:
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Package dimensions
44-pin TSOP 2
Min (mm) Max (mm)
A1.2
A10.05 0.15
A20.95 1.05
b0.3 0.45
c0.12 0.21
d18.31 18.52
e10.06 10.26
He11.68 11.94
E0.80 (typical)
l0.40 0.60
d
H
e
1234567891011121314
44 43424140393837363534333231
1516
3029
1718 1920
272625
c
l
A
1
A
2
E
44-pin TSOP 2
0–5
°
21
24
22
23
e
A
b
28
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Note: Add suffix ‘N’ to the above part numbers for Lead Free Parts. (EX: AS7C32098A - 10TCN)
Ordering Codes
Package Temperature 10 ns 12 ns 15 ns 20 ns
TSOP 2 Commercial AS7C32098A-10TC AS7C32098A-12TC AS7C32098A-15TC AS7C32098A-20TC
Industrial AS7C32098A-10TI AS7C32098A-12TI AS7C32098A-15TI AS7C32098A-20TI
Part numbering system
AS7C X 2098A –XX T X X
SRAM
prefix Voltage:
3 - 3.3V CMOS Device
number Access
time Package:
T: TSOP 2
Temperature ranges:
C: Commercial, 0°C to 70°C
I: Industrial, –40°C to 85°C N = Lead Free Parts
Alliance Semiconductor Corporation
2575, Augustine Drive,
Santa Clara, CA 95054
Tel: 408 - 855 - 4900
Fax: 408 - 855 - 4999
www.alsc.com
Copyright © Alliance Semiconductor
All Rights Reserved
Part Number: AS7C32098A
Document Version: v 1.1
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AS7C32098A
®
®