2N1893 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (TC=25C) Power Dissipation Operating and Storage Junction Temperature VCEO VEBO 120 UNITS V 100 V 80 V 7.0 V IC PD PD 500 mA 3.0 W 0.8 W TJ, Tstg -65 to +200 C MAX 10 UNITS nA 10 nA ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VCB=90V VEB=5.0V BVCBO IC=100A 120 V BVCER 100 V BVCEO IC=10mA, RBE=10 IC=10mA 80 V BVEBO IE=100A 7.0 VCE(SAT) IC=50mA, IB=5.0mA 1.2 VCE(SAT) IC=150mA, IB=15mA IC=50mA, IB=5.0mA 5.0 V 0.9 V 1.3 V VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib IC=150mA, IB=15mA VCE=10V, IC=100A VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=50mA, f=20MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz V V 20 35 40 120 50 MHz 15 pF 85 pF R1 (23-April 2013) 2N1893 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (23-April 2013) w w w. c e n t r a l s e m i . c o m