2N1893
SILICON
NPN TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N1893 is a silicon
NPN epitaxial planar transistor designed for small signal
general purpose switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCER 100 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 500 mA
Power Dissipation (TC=25°C) PD 3.0 W
Power Dissipation PD 0.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=90V 10 nA
IEBO V
EB=5.0V 10 nA
BVCBO I
C=100µA 120 V
BVCER I
C=10mA, RBE=10 100 V
BVCEO I
C=10mA 80 V
BVEBO I
E=100µA 7.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 1.2 V
VCE(SAT) I
C=150mA, IB=15mA 5.0 V
VBE(SAT) I
C=50mA, IB=5.0mA 0.9 V
VBE(SAT) I
C=150mA, IB=15mA 1.3 V
hFE V
CE=10V, IC=100A 20
hFE V
CE=10V, IC=10mA 35
hFE V
CE=10V, IC=150mA 40 120
fT V
CE=10V, IC=50mA, f=20MHz 50 MHz
Cob V
CB=10V, IE=0, f=100kHz 15 pF
Cib V
EB=0.5V, IC=0, f=100kHz 85 pF
TO-39 CASE
R1 (23-April 2013)
www.centralsemi.com
2N1893
SILICON
NPN TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (23-April 2013)
