TLMT3100 TELEFUNKEN Semiconductors Low Current SMD LED Color High efficiency red Type TLMT3100 Technology GaAsP on GaP Angle of Half Intensity o 60 Description These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the TLMT3100 is the P-LCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is surrounded with a white thermoplast. The reflector inside this package is filled up with clear epoxy. Features D D D D SMD LED with exceptional brightness Compatible with automatic placement equipment 94 8553 EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC D Available in 8 mm tape D Low profile package D Non-diffused lens: excellent for coupling to light pipes and backlighting D Very low power consumption D Luminous intensity ratio in one packaging unit IVmax/IVmin x 2.0 Applications Automotive: backlighting in dashboards and switches Telecommunication: indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight for battery driven equipment Small indicator for outdoor applications Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Rev. A1: 01.06.1995 1 (6) TLMT3100 TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25C, unless otherwise specified TLMT3100 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Test Conditions x tp 10 ms Tamb 90C t5s mounted on PC board (pad size > 16 mm2) Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 7 0.5 20 100 -40 to +100 -55 to +100 260 500 Unit V mA A mW C C C C K/W Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified High efficiency red (TLMT3100 ) Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2 (6) Test Conditions IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IF = 2 mA IR = 10 mA VR = 0, f = 1 MHz Type Symbol IV ld lp VF VR Cj Min 0.25 612 6 Typ 2.5 Max 625 635 60 2.2 15 50 2.9 Unit mcd nm nm deg V V pF Rev. A1: 01.06.1995 TLMT3100 TELEFUNKEN Semiconductors Typical Characteristics (Tamb = 25_C, unless otherwise specified) 100 IF - Forward Current ( mA ) PV - Power Dissipation ( mW ) 25 20 15 10 5 0 10 1 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10841 0 1 2 3 4 5 VF - Forward Voltage ( V ) 95 10050 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage 2.0 Iv rel - Relative Luminous Intensity 10 8 6 4 2 High Efficiency Red 1.6 1.2 0.8 0.4 IF=2mA 0 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) 95 10842 10 20 40 0.9 50 0.8 60 70 0.7 80 40 60 80 100 Figure 5. Rel. Luminous Intensity vs. Ambient Temperature 2.4 30 1.0 20 Tamb - Ambient Temperature ( C ) 95 10051 Figure 2. Forward Current vs. Ambient Temperature 0 0 Iv rel - Relative Luminous Intensity 0 Iv rel - Relative Luminous Intensity tp/T=0.001 tp=10ms 0.1 0 IF - Forward Current ( mA ) High Efficiency Red High Efficiency Red 2.0 1.6 1.2 0.8 0.4 0 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Rev. A1: 01.06.1995 95 10321 10 20 50 1 0.5 0.2 100 0.1 200 500 IF(mA) 0.05 0.02 tp/T Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 3 (6) TLMT3100 TELEFUNKEN Semiconductors 1.2 Iv rel - Relative Luminous Intensity Iv rel - Relative Luminous Intensity 100 High Efficiency Red 10 1 0.1 High Efficiency Red 1.0 0.8 0.6 0.4 0.2 0.01 0.1 95 10061 1 10 0 590 100 IF - Forward Current ( mA ) Figure 7. Relative Luminous Intensity vs. Forward Current 95 10040 610 630 650 670 690 l - Wavelength ( nm ) Figure 8. Relative Luminous Intensity vs. Wavelength PCB Layout in mm 95 10966 4 (6) Rev. A1: 01.06.1995 TELEFUNKEN Semiconductors TLMT3100 Dimensions in mm 95 11314 Rev. A1: 01.06.1995 5 (6) TLMT3100 TELEFUNKEN Semiconductors Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 6 (6) Rev. A1: 01.06.1995