TELEFUNKEN Semiconductors TLMT3100
Rev. A1: 01.06.1995 1 (6)
Low Current SMD LED
Color Type Technology Angle of Half Intensity
±
ö
High efficiency red TLMT3100 GaAsP on GaP 60
°
Description
These new devices have been designed to meet the in-
creasing demand for low current SMD LEDs.
The package of the TLMT3100 is the P–LCC–2 (equiva-
lent to a size B tantalum capacitor).
It consists of a lead frame which is surrounded with a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
Features
D
SMD LED with exceptional brightness
D
Compatible with automatic placement equipment
D
EIA and ICE standard package
D
Compatible with infrared, vapor phase and wave
solder processes according to CECC
D
Available in 8 mm tape
D
Low profile package
D
Non-diffused lens: excellent for coupling to light
pipes and backlighting
D
Very low power consumption
D
Luminous intensity ratio in one packaging unit
IVmax/IVmin
x
2.0
94 8553
Applications
Automotive: backlighting in dashboards and switches
Telecommunication: indicator and backlighting in telephone and fax
Indicator and backlight for audio and video equipment
Indicator and backlight for battery driven equipment
Small indicator for outdoor applications
Indicator and backlight in office equipment
Flat backlight for LCDs, switches and symbols
General use
TELEFUNKEN Semiconductors
TLMT3100
Rev. A1: 01.06.19952 (6)
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
TLMT3100
Parameter Test Conditions Symbol Value Unit
Reverse voltage VR6 V
DC forward current IF7 mA
Surge forward current tp
x
10
m
sIFSM 0.5 A
Power dissipation Tamb ≤ 90
°
C PV20 mW
Junction temperature Tj100
°
C
Operating temperature range Tamb –40 to +100
°
C
Storage temperature range Tstg –55 to +100
°
C
Soldering temperature t ≤ 5 s Tsd 260
°
C
Thermal resistance junction/ambient mounted on PC board (pad
size > 16 mm2)RthJA 500 K/W
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
High efficiency red (TLMT3100 )
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 2 mA IV0.25 2.5 mcd
Dominant wavelength IF = 2 mA
l
d612 625 nm
Peak wavelength IF = 2 mA
l
p635 nm
Angle of half intensity IF = 2 mA ϕ±60 deg
Forward voltage IF = 2 mA VF2.2 2.9 V
Reverse voltage IR = 10
m
A VR6 15 V
Junction capacitance VR = 0, f = 1 MHz Cj50 pF
TELEFUNKEN Semiconductors TLMT3100
Rev. A1: 01.06.1995 3 (6)
Typical Characteristics (Tamb = 25
_
C, unless otherwise specified)
020406080
0
5
10
15
20
25
P – Power Dissipation ( mW )
V
Tamb – Ambient Temperature ( °C )
100
95 10841
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
2
4
6
8
10
I – Forward Current ( mA )
F
Tamb – Ambient Temperature ( °C )
100
95 10842
Figure 2. Forward Current vs. Ambient Temperature
0.4 0.2 0 0.2 0.4
I – Relative Luminous Intensity
v rel
0.6
95 10319
0.6
0.9
0.8
0°30°
10
°20
°
40°
50°
60°
70°
80°
0.7
1.0
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
01234
0.1
1
10
100
VF – Forward Voltage ( V )
5
95 10050
I – Forward Current ( mA )
F
High Efficiency Red
tp/T=0.001
tp=10
m
s
Figure 4. Forward Current vs. Forward Voltage
0
95 10051
20 40 60 80 100
I – Relative Luminous Intensity
v rel
Tamb – Ambient Temperature ( °C )
High Efficiency Red
IF=2mA
0
0.4
0.8
1.2
1.6
2.0
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
95 10321
500
0.5 0.2 0.1 0.05 0.021
IF(mA)
tp/T
I – Relative Luminous Intensity
v rel
2.0 High Efficiency Red
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
TELEFUNKEN Semiconductors
TLMT3100
Rev. A1: 01.06.19954 (6)
0.1 1 10
0.01
0.1
1
10
100
100
95 10061
I – Relative Luminous Intensity
v rel
IF – Forward Current ( mA )
High Efficiency Red
Figure 7. Relative Luminous Intensity vs. Forward Current
590 610 630 650 670
0
0.2
0.4
0.6
0.8
1.2
690
95 10040
I – Relative Luminous Intensity
v rel
l
– Wavelength ( nm )
1.0 High Efficiency Red
Figure 8. Relative Luminous Intensity vs. Wavelength
PCB Layout in mm
95 10966
TELEFUNKEN Semiconductors TLMT3100
Rev. A1: 01.06.1995 5 (6)
Dimensions in mm
95 11314
TELEFUNKEN Semiconductors
TLMT3100
Rev. A1: 01.06.19956 (6)
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
