4-189
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
ORDERING INFORMATION
Part No. Package Temp. Range
TC1411COA 8-Pin SOIC 0°C to +70°C
TC1411CPA 8-Pin Plastic DIP 0°C to +70°C
TC1411EOA 8-Pin SOIC – 40°C to +85°C
TC1411EPA 8-Pin Plastic DIP – 40°C to +85°C
TC1411NCOA 8-Pin SOIC 0°C to +70°C
TC1411NCPA 8-Pin Plastic DIP 0°C to +70°C
TC1411NEOA 8-Pin SOIC – 40°C to +85°C
TC1411NEPA 8-Pin Plastic DIP – 40°C to +85°C
FUNCTIONAL BLOCK DIAGRAM
OUTPUT
INPUT
GND EFFECTIVE
INPUT
C = 10pF
300mV
INVERTING
OUTPUTS
NONINVERTING
OUTPUTS
V
DD
TC1411N
4.7V
TC1411
FEATURES
■Latch-Up Protected: Will Withstand 500mA
Reverse Current
■Input Will Withstand Negative Inputs Up to 5V
■ESD Protected....................................................4 kV
■High Peak Output Current .................................. 1A
■Wide Operating Range ..........................4.5V to 16V
■High Capacitive Load
Drive Capability .......................... 1000pF in 25nsec
■Short Delay Time .................................. 30nsec Typ
■Consistent Delay Times With Changes in
Supply Voltage
■Matched Delay Times
■Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
■Low Output Impedance ....................................... 8Ω
■Pinout Same as TC1410/12/13
GENERAL DESCRIPTION
The TC1411/1411N are 1A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1411/1411N can easily
switch 1000 pF gate capacitance in 25nsec with matched
rise and fall times, and provide low enough impedance in
both the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
PIN CONFIGURATIONS
TC1411
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
NC = NO INTERNAL CONNECTION
2 6, 7
INVERTING
NOTE: SOIC pinout is identical to DIP.
OUT
TC1411N
1
2
3
4
V
DD
5
6
7
8
OUT
GND
V
DD
IN
NC
GND
2 6, 7
NONINVERTING
OUT
TC1411/N-10 10/11/96
4-190 TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature.................................+150°C
Storage Temperature Range ................– 65°C to +150°C
Lead Temperature (Soldering, 10 sec) .................+300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C.................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C..................................................... 45°C/W
Operating Temperature Range
C Version...............................................0°C to +70°C
E Version ..........................................– 40°C to +85°C
Power Dissipation (TA ≤ 70°C)
Plastic .............................................................730mW
CerDIP............................................................800mW
SOIC...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless other-
wise specified.
Symbol Parameter Test Conditions Min Typ Max Unit
Input
VIH Logic 1 High Input Voltage 2.0 — — V
VIL Logic 0 Low Input Voltage — — 0.8 V
IIN Input Current –5V ≤ VIN ≤ VDD TA = 25°C– 1—1µA
– 40°C ≤ T
A
≤ 85°C
– 10 — 10
Output
VOH High Output Voltage DC Test VDD – 0.025 — — V
VOL Low Output Voltage DC Test — — 0.025 V
ROOutput Resistance VDD = 16V, IO = 10mA TA = 25°C—811Ω
0°C ≤ TA ≤ 70°C — 10 14
– 40°C ≤ T
A
≤ 85°C
—1014
I
PK Peak Output Current VDD = 16V — 1.0 — A
IREV Latch-Up Protection Duty Cycle ≤ 2% 0.5 — — A
Withstand Reverse Current t ≤ 300 µsec
Switching Time (Note 1)
tRRise Time Figure 1 TA = 25°C — 25 35 nsec
0°C ≤ TA ≤ 70°C — 27 40
– 40°C ≤ T
A
≤ 85°C
—2940
t
FFall Time Figure 1 TA = 25°C — 25 35 nsec
0°C ≤ TA ≤ 70°C — 27 40
– 40°C ≤ T
A
≤ 85°C
—2940
t
D1 Delay Time Figure 1 TA = 25°C — 30 40 nsec
0°C ≤ TA ≤ 70°C — 33 45
– 40°C ≤ T
A
≤ 85°C
—3545
t
D2 Delay Time Figure 1 TA = 25°C — 30 40 nsec
0°C ≤ TA ≤ 70°C — 33 45
– 40°C ≤ T
A
≤ 85°C
—3545
Power Supply
ISPower Supply Current VIN = 3V VDD = 16V — 0.5 1.0 mA
VIN = 0V — 0.1 0.15
NOTE: 1. Switching times are guaranteed by design.
VDD = 16V
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
4-191
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
Figure 1. Switching Time Test Circuit
+5V
INPUT
10%
90%
10%
90%
10%
90%
VDD
OUTPUT
tD1
0V
0V
90%
10%
10% 10%
t
F
90%
+5V
INPUT
VDD
OUTPUT
0V
90%
OUTPUT
INPUT
0.1µF
CL = 1000pF
4.7µF
VDD= 16V
Inverting Driver
TC1411
4,5
1,8
6,7
Noninverting Driver
TC1411N
tFtD2 tR
0V
tR
tD1 tD2
INPUT: 100 kHz, square wave,
tRISE = tFALL £ 10nsec
2
TC1411
TC1411N
200
0
400
600
800
1000
1200
1400
1600
010 20 30 40 50 60 70 80 90 100 110 120
AMBIENT TEMPERATURE (°C)
8 Pin DIP
Thermal Derating Curves
MAX. POWER (mW)
8 Pin CerDIP
8 Pin SOIC
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
4-192 TELCOM SEMICONDUCTOR, INC.
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
0
100
200
300
400
500
16141210864
V
DD
(VOLTS)
Quiescent Supply Current
vs. Supply Voltage
T
A
= 25°C
I
SUPPLY
(µA)
-40 -20 0 20 40 60 80
0
100
200
300
400
500
TEMPERATURE (°C)
Quiescent Supply Current
vs. Temperature
V
SUPPLY
= 16V
I
SUPPLY
(µA)
V
IN
= 3V
V
IN
= 0V V
IN
= 0V
V
IN
= 3V
1.1
1.2
1.3
1.4
1.5
1.6
16141210864
V
DD
(VOLTS)
Input Threshold
vs. Supply Voltage
T
A
= 25°C
V
THRESHOLD
(VOLTS)
-40 -20 0 20 40 60 80
1.1
1.2
1.3
1.4
1.5
1.6
TEMPERATURE (°C)
Input Threshold
vs. Temperature
V
SUPPLY
= 16V
V
THRESHOLD
(VOLTS)
V
IH
V
IL
V
IL
V
IH
0
5
10
15
20
25
16141210864
V
DD
(VOLTS)
High-State Output Resistance
R
ds
(ON) W
Low-State Output Resistance
R
ds
(ON) W
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
0
5
10
15
20
25
16141210864
V
DD
(VOLTS)
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
TYPICAL CHARACTERISTICS
4-193
TELCOM SEMICONDUCTOR, INC.
7
6
5
4
3
1
2
8
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
0
20
40
60
80
100
16141210864 VDD (VOLTS)
Rise Time vs. Supply Voltage
CLOAD = 1000pF
TRISE (nsec)
TA = –40°C
TA = 25°C
TA = 85°C
0
20
40
60
80
100
16141210864 VDD (VOLTS)
Fall Time vs. Supply Voltage
CLOAD = 1000pF
TFALL (nsec)
TA=–40°C
TA=25°C
TA = 85°C
0
20
40
60
80
100
16141210864 VDD (VOLTS)
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 1000pF
TD1 (nsec)
TA = –40°C
TA = 25°C
TA = 85°C
0
20
40
60
80
100
16141210864 VDD (VOLTS)
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 1000pF
TD2 (nsec)
TA = –40°C
TA=25°C
TA = 85°C
0 500 1000 1500 2000 2500 3000 3500
0
20
40
60
80
100
CLOAD (pF)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
TRISE, TFALL (nsec)
TFALL
TRISE
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
PROPAGATION DELAYS (nsec)
TD2
TD1
0 500 1000 1500 2000 2500 3000 3500
CLOAD (pF)
26
28
30
32
34
36
TYPICAL CHARACTERISTICS (Cont.)
